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    ADLINK Technology Inc NEON-202B-JT2-X Starter Kit, 1.9M, 60fps

    Cameras & Camera Modules NEON-202B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2,1.9M color sensor, 60fps, globe shutter, w/all accessory
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    Mouser Electronics NEON-202B-JT2-X Starter Kit, 1.9M, 60fps 2
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    ADLINK Technology Inc NEON-201B-JT2-X Starter Kit,1.2MP,54fps

    Cameras & Camera Modules NEON-201B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2, 1.2M color sensor, 54fps, globe shutter, w/all accessory
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    Mouser Electronics NEON-201B-JT2-X Starter Kit,1.2MP,54fps
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    ADLINK Technology Inc NEON-204B-JT2-X Starter Kit, 5M, 14fps

    Cameras & Camera Modules NEON-204B-JT2-X Starter Kit, IP67, NVIDIA Jetson TX2, 5M color sensor, 14fps, rolling shutter, w/all accessory
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    Mouser Electronics NEON-204B-JT2-X Starter Kit, 5M, 14fps
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    Amphenol Positronic SP2BJTS38F0N9A1

    Power to the Board
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    Interstate Connecting Components SP2BJTS38F0N9A1
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    Amphenol Positronic SP2BJTS38F0N9A1/AA

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    Interstate Connecting Components SP2BJTS38F0N9A1/AA
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    BJTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L6521

    Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■


    Original     		PDF L6520 L6521 L6520TR L6521TR L6521 L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC

    S042P

    Abstract: NPN pnp MATCHED PAIRS BJT characteristics r14 diode pnp transistor datasheet NPN MATCHED PAIRS LM1496 OPAMP pdf of transistors npn pnp pnp and npn
    Text: Four-quadrant multiplier R.M.M. Derkx Modern four-quadrant multipliers frequently consist of two matched di erential pairs of npn BJTs. This principle was developed in 1968 by B.Gilbert and is applied in the mixers multipliers S042P of Siemens and the LM1496 of National Semiconductor. A four-quadrant multiplier with


    Original     		PDF S042P LM1496 CA3096, NPN pnp MATCHED PAIRS BJT characteristics r14 diode pnp transistor datasheet NPN MATCHED PAIRS OPAMP pdf of transistors npn pnp pnp and npn

    IGBT PIN CONFIGURATION

    Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and


    Original     		PDF GN2470 SR036 SR037 O-252 SR036 1N4001 IGBT PIN CONFIGURATION 400CA IC SR03x 700V mos GN2470K4-G B1130 SR03x

    SiC BJT

    Abstract: transistor 304
    Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.


    Original     		PDF 12M6501 SiC BJT transistor 304

    2SD2195

    Abstract: is2764 BF 246 Darlington npn BF800
    Text: SPICE PARAMETER 2SD2195 * 2SD2195 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD2195 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9


    Original     		PDF 2SD2195 2SD2195 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 is2764 BF 246 Darlington npn BF800

    2SB1316

    Abstract: Darlington pnp spice
    Text: SPICE PARAMETER 2SB1316 * 2SB1316 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1316 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9


    Original     		PDF 2SB1316 2SB1316 500E3 764E-9 00E-21 62E-15 00E-3 5E-15 61E-3 Darlington pnp spice

    2SD1867

    Abstract: BF800
    Text: SPICE PARAMETER 2SD1867 * 2SD1867 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1867 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9


    Original     		PDF 2SD1867 2SD1867 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 BF800

    HBFP-0450

    Abstract: Agilent MSA-2543 JESD22-A113-B MSA-2543 MSA-2X43 qcpm HBFP-0405 HBFP-0420 HBFP0450 MSA-2743
    Text: Agilent MSA-2543 / 2643 / 2743 MMIC Amplifier Reliability Data Sheet Description The Agilent MSA-2x43 is a MMIC amplifier fabricated using the NT25 process. This process has been qualified on-wafer level and in products such as the Agilent HBFP-0405, HBFP-0420, HBFP0450 BJTs and the QCPM-9804


    Original     		PDF MSA-2543 MSA-2x43 HBFP-0405, HBFP-0420, HBFP0450 QCPM-9804 JESD22-A113-B 5988-5287EN HBFP-0450 Agilent MSA-2543 qcpm HBFP-0405 HBFP-0420 MSA-2743

    l6520

    Abstract: L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation


    Original     		PDF L6520 L6521 L6520TR L6521TR l6520 L6521 SELF OSCILLATING HALF BRIDGE DRIVER IC hsd 965 Ignition Transformer ELECTRONIC ballast choke details instant on BALLAST CONTROL IC 16998 bjt half bridge driver

    IXAN0061

    Abstract: Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics
    Text: IXAN0061 Power MOSFET Basics Abdus Sattar, IXYS Corporation Power MOSFETs have become the standard choice for the main switching devices in a broad range of power conversion applications. They are majority carrier devices with no minority carrier injection, superior to Power Bipolar Junction Transistors BJTs and


    Original     		PDF IXAN0061 AN10273 IXAN0061 Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs JA BJT depletion mode power mosfet mosfet depletion power bjt datasheet POWER BJTs transconductance mosfet Drive Base BJT BJT with i-v characteristics

    Drive Base BJT

    Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
    Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE


    Original     		PDF AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    Half BRIDGE driver for bjt

    Abstract: No abstract text available
    Text: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■


    Original     		PDF L6520 L6521 L6521TR L6520TR Half BRIDGE driver for bjt

    2n7002ltig

    Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
    Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or


    Original     		PDF AND8305/D NCP3063 2n7002ltig TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340

    Transistor D 799

    Abstract: 2SD5060 D 799 2SC5060
    Text: SPICE PARAMETER 2SD5060 * 2SC5060 DARLINGTON NPN BJT model * Date: 2006/12/08 * BJTs with diodes and resistors *C B E .SUBCKT 2SC5060 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.702 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.000E3 R2 4 3 1.000E3 .MODEL Dmodel D


    Original     		PDF 2SD5060 2SC5060 000E3 70E-9 00E-21 00E-15 382E3 00E-3 Transistor D 799 2SD5060 D 799

    Bjt 547

    Abstract: 4067 spice model Transistor 547 bjts C 547 C 2SD2143 Darlington npn
    Text: SPICE PARAMETER 2SD2143 * 2SD2143 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2143 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D


    Original     		PDF 2SD2143 2SD2143 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 Bjt 547 4067 spice model Transistor 547 bjts C 547 C Darlington npn

    2SD1980

    Abstract: 3238 bjts BF800
    Text: SPICE PARAMETER 2SD1980 * 2SD1980 DARLINGTON NPN BJT model * Date: 2006/12/11 * BJTs with a diode and resistors *C B E .SUBCKT 2SD1980 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .8071 D1 3 1 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9


    Original     		PDF 2SD1980 2SD1980 500E3 764E-9 00E-21 0E-15 00E-3 076E-12 835E-12 3238 bjts BF800

    4067 spice model

    Abstract: 2SD1866
    Text: SPICE PARAMETER 2SD1866 * 2SD1866 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD1866 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D


    Original     		PDF 2SD1866 2SD1866 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 4067 spice model

    Untitled

    Abstract: No abstract text available
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package


    Original     		PDF GN2470 GN2470 O-252 DSFP-GN2470 A100208

    BLY93a

    Abstract: No abstract text available
    Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR


    Original     		PDF BLY93A 30Vdc. 175MHzl BLY93a

    3818

    Abstract: 322 652 BF-700 2SB1580 Darlington pnp spice tr3502
    Text: SPICE PARAMETER 2SB1580 * 2SB1580 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with a diode and resistors *C B E .SUBCKT 2SB1580 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 3.932 D1 1 3 Dmodel R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D + IS=2.764E-9


    Original     		PDF 2SB1580 2SB1580 500E3 764E-9 00E-21 62E-15 00E-3 5E-15 61E-3 3818 322 652 BF-700 Darlington pnp spice tr3502

    Bjt 547

    Abstract: Transistor 547 npn darlington 2SD2212 BF650
    Text: SPICE PARAMETER 2SD2212 * 2SD2212 DARLINGTON NPN BJT model * Date: 2006/12/12 * BJTs with diodes and resistors *C B E .SUBCKT 2SD2212 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 4.067 D1 3 1 Dmodel D2 2 1 DZ R1 2 4 3.500E3 R2 4 3 300 .MODEL Dmodel D


    Original     		PDF 2SD2212 2SD2212 500E3 79E-9 00E-21 29E-15 00E-3 4E-15 06E-12 Bjt 547 Transistor 547 npn darlington BF650

    current fed push pull topology

    Abstract: EFD25 n87 N87 material
    Text: MIC3830/3831/3832/3833 Current-Fed PWM Controllers Preliminary Information The three output stages are totem-pole drivers capable of 1A peak current to external power MOSFETs, BJTs, or IGBTs. General Description The MIC3830, MIC3831, MIC3832, and MIC3833 are a


    OCR Scan     		PDF MIC3830/3831/3832/3833 MIC3830, MIC3831, MIC3832, MIC3833 IC3830/1/2/3 200kHz IRF540 1N968 EFD25, current fed push pull topology EFD25 n87 N87 material