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    BJT 50A Search Results

    BJT 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP1CS04DWT-00#X0 Renesas Electronics Corporation IGBT 1250V 50A Chip Visit Renesas Electronics Corporation
    RJP65S04DWA-80#W0 Renesas Electronics Corporation IGBT 650V 50A Wafer Visit Renesas Electronics Corporation
    RJP65S04DWS-80#W0 Renesas Electronics Corporation IGBT 650V 50A Sawn Visit Renesas Electronics Corporation
    RJP1CS04DWA-80#W0 Renesas Electronics Corporation IGBT 1250V 50A Wafer Visit Renesas Electronics Corporation
    RJP1CS04DWT-80#X0 Renesas Electronics Corporation IGBT 1250V 50A Chip Visit Renesas Electronics Corporation
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    BJT 50A Price and Stock

    Citizen Finedevice Co Ltd HCM4935795450ABJT

    Crystals HC49/U-S SMD Crystal
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HCM4935795450ABJT
    • 1 $0.46
    • 10 $0.433
    • 100 $0.403
    • 1000 $0.341
    • 10000 $0.331
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    Allegro MicroSystems LLC APM81815KNBJTR

    Allegro MicroSystems
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics APM81815KNBJTR
    • 1 -
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    • 10000 $2.48
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    Citizen Finedevice Co Ltd CS325S26650000ABJT

    Crystals SMD Crystal 3.2x2.5mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CS325S26650000ABJT
    • 1 -
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    • 10000 $0.912
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    BJT 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYT12-1000

    Abstract: GTO triac power IGBT MOSFET transistor GTO SCR di IR thyristor manual IR thyristor manual ST GTO thyristor driver power IGBT MOSFET GTO SCR diode power bjt advantages and disadvantages GTO thyristor Application notes Semiconductor Group igbt
    Text: APPLICATION NOTE CHARACTERISTICS OF POWER SEMICONDUCTORS by J. M. Peter ABSTRACT Advantages and disadvantages are summarised, and the relative cost of each solution indicated. This paper aims to give a brief overview of the essential characteristics of power semiconductors,


    Original     		PDF

    mosfet base induction heat circuit

    Abstract: mitsubishi sic MOSFET power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi igbt induction heating generator Cree SiC MOSFET SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
    Text: High Heat Flux Applications in Power Electronics Scott G. Leslie Chief Technologist Powerex Inc Youngwood PA High Heat Flux Applications in Power Electronics 2005 1 Power Switching Capacity VA Power Semiconductor Device Power Switching Capacity & Application Map


    Original     		PDF

    STK621-051

    Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031
    Text: Ordering number: EP35E Combining Power and Control, Sanyo Inverter Power IC Enables Easy Realization of Power Saving for Equipment To what extent can electrical equipment become environmentally friendly? One of the answers is power-saving and low-consumption power technology. Inverter technology


    Original     		PDF EP35E 15-C2, STK621-051 STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk621 stk611-031

    Untitled

    Abstract: No abstract text available
    Text: D1U3CS-D-850-12-HxxC Series www.murata-ps.com 81mm 1U Front End DC-DC Power Supply Converter PRODUCT OVERVIEW The D1U3CS-D-850-12-HxxC series are highly efficient 850 watt, DC input front end supplies with a 12V main output and a 3.3V 20W standby. They have active current sharing and up to 8 supplies may be


    Original     		PDF D1U3CS-D-850-12-HxxC

    fuse 9 BJE 41

    Abstract: lucent 595A 596A ks22010 lucent 595B 596B3 GALAXY MILLENNIUM network setup default password LUCENT 50A RECTIFIER GPS4848 596B
    Text: Galaxy Power System Verification Procedures User’s Guide Select Code 167-792-010 Comcode 108639659 Issue 3 January 2008 User’s Guide Select Code 167-792-010 Comcode 108639659 Issue 3 January 2008 Galaxy Power System Verification Procedures Notice: The information, specifications, and procedures in this manual are


    Original     		PDF RS-232 fuse 9 BJE 41 lucent 595A 596A ks22010 lucent 595B 596B3 GALAXY MILLENNIUM network setup default password LUCENT 50A RECTIFIER GPS4848 596B

    74xx76

    Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
    Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters


    Original     		PDF 71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32

    lucent 595A

    Abstract: lucent 595B lineage 2000 ecs LUCENT 50A RECTIFIER GALAXY MILLENNIUM network setup default password GPS2424 596A Galaxy rectifier controller GALAXY MILLENNIUM gps4848
    Text: Galaxy Power System Verification Procedures User’s Guide Select Code 167-792-010 Comcode 108639659 Issue 1 March 2000 2000 Lucent Technologies User’s Guide Select Code 167-792-010 Comcode 108639659 Issue 1 March 2000 Galaxy Power System Verification Procedures


    Original     		PDF RS-232 lucent 595A lucent 595B lineage 2000 ecs LUCENT 50A RECTIFIER GALAXY MILLENNIUM network setup default password GPS2424 596A Galaxy rectifier controller GALAXY MILLENNIUM gps4848

    reverse phase control igbt dimmer schematic

    Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
    Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo [email protected] 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a


    Original     		PDF AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor

    stanag 3456

    Abstract: ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs
    Text: APPLICATION NOTE APT9601 By: Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured in the ZVT Thyristor-Dual Mode Yield > 95% Converter Efficiency at 1-10 kW, When Resonantly Switched


    Original     		PDF APT9601 stanag 3456 ac Inverter schematics 10 kw 30KW Inverter Diagram working principle of an inverter convertisseur dc ac 115v 400 hz 120 degree conduction mode of an inverter Pure sinewave inverter circuit diagram commutation techniques of scr principle block diagram 115v 400hz power single phase dual output inverter with three switch legs

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    UNI-GY-85

    Abstract: rl400d50 CEA G62 167-790-063 KS-15544 sdt 2000a unigy BATTERY lead acid batteries exide J85501F-1 J85503C3
    Text: Galaxy SC Controller J85501F-1 Part 1 Product Manual Select Code 167-790-060 Comcode 107330946 Issue 18 January 2008 Product Manual Select Code 167-790-060 Comcode 107330946 Issue 18 January 2008 Galaxy SC Controller J85501F-1 Part 1 Notice: The information, specifications, and procedures in this manual are


    Original     		PDF J85501F-1 L-32/MCS UNI-GY-85 rl400d50 CEA G62 167-790-063 KS-15544 sdt 2000a unigy BATTERY lead acid batteries exide J85501F-1 J85503C3

    MITSUBISHI CM300

    Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM300 MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Quasi-resonant Converter for induction cooker

    Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
    Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8


    Original     		PDF Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter

    fuji 2DI 50Z-120

    Abstract: cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V
    Text: 20/ 50Z-120 FU JI ET030E 2-Pack BJT 1200 V 50 A ✓ < 7 — POW ER TR A N S ISTO R M O D ULE ' Features • iS it/± • 7 U— High Voltage lJ — Krt/R Including Free Wheeling Diode • ASO i ? & \ s Excellent Safe Operating Area • t&W iM Insulated Type


    OCR Scan     		PDF 50Z-120 E82988 fuji 2DI 50Z-120 cf rh transistor fuji 2di Collmer Semiconductor 2DI Vceo-1200V

    fuji 2di

    Abstract: Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100
    Text: 2-Pack BJT 1000 V 50 a 2DI Ä I - / I 50Z-100 I \ß \ß Outline Drawings s \ r7 — \ = 7 y j > 7 s ^ ^ : i > = L - V POWER TRANSISTOR MODULE • I t ë : Features • ¡SAME High Voltage • 7 l) — U KF*3/8c • ASO including Free W heeling Diode Excellent Safe Operating Area


    OCR Scan     		PDF 50Z-100 E82988 fuji 2di Collmer Semiconductor 2DI 50z-100 Collmer Semiconductor 2DI bjt 50a power transistor bjt 1000 a 50Z-100 50Z100

    power bjt transistor 600v

    Abstract: fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V
    Text: FUJI 2DI 50D-050A M U M Ë ïïr a iÊ /< 2-Pack BJT 600 V 50 A 7— \ s7 'S *S 7 & :& > n .— V POWER TRANSISTOR MODULE Features • High Current • h F E ^ g i' High DC Current Gain •mm Insulated Type A pplicatio ns • High Power Switching • ftE fM n X X fll Uninterruptible Power Supply


    OCR Scan     		PDF 50D-050A E82988 power bjt transistor 600v fuji bjt 50D-050A transistor and schematic symbols Transistor BJT 100A 2D TRANSISTOR 50d-050 M208 bjt transistor 600v 2pack transistor module 50a 600V

    6di15a-050

    Abstract: power bjt transistor 600v 6DI15A-050 equivalent transistor fuji bjt 6-pack 1B2 diode
    Text: FU JI 6 s u s s n a ie D I 1 5 A - 0 5 6-Pack BJT 600 V 15 A l £ f • Outline D rawings POWER TRANSISTOR MODULE F e a tu re s • U — ;fr-f "7 > • '$ . * ? 4 # — • h F E ^ 'iS l' • Krt/8 In c lu d in g Free W h e e lin g D iode H igh DC C urrent Gain


    OCR Scan     		PDF 6DI15A-050 E82988 6di15a-050 power bjt transistor 600v 6DI15A-050 equivalent transistor fuji bjt 6-pack 1B2 diode

    M208 B1

    Abstract: 3fc transistor power bjt transistor 600v 2D TRANSISTOR M208 bjt 50a
    Text: 2-Pack BJT H É S o s o e 2 D *<*7— I 3 D - 0 5 A T Jl > i I Outline Drawings POWER TRANSISTOR MODULE Features —Tfrj l > * f ¥ 4 • 7 'J • hFE^v' t x • if e i i M K rt/S t In c lu d in g Free W h e e lin g D iode H igh DC C urrent Gain Insulated Type


    OCR Scan     		PDF 130D-050A E82988 M208 B1 3fc transistor power bjt transistor 600v 2D TRANSISTOR M208 bjt 50a

    bjt 50a

    Abstract: M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols
    Text: FUJI 6-Pack BJT 600 V 50 A 6DI50C-050 [M L S m S O e l £ POWER TRANSISTOR MODULE f '• Outline Drawings LÖÖ^JM 4 18-5 I 18"5""i" 18-5 |fiÖij 4-^5.a ! Features • K r tlt -y i — y f z j i) ' s f ? j • h F E ^ iS ^ ' In c lu d in g Free W h e e lin g D iode


    OCR Scan     		PDF 50C-050 E82988 bjt 50a M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols

    RF840

    Abstract: BO 336
    Text: RF2608 MICRO DEVICES CDMA/FM U PC O N VER TER / B P S K M ODULATOR T y p ic a l A p p lic a tio n s • CDMA/FM Cellular Systems • Commercial and Consumer Systems • Supports Dual-Mode AMPS/CDMA • Battery Operated Systems • Supports Dual-Mode TACS/CDMA


    OCR Scan     		PDF RF2608 RF2608 260B410Rev RF840 BO 336

    Untitled

    Abstract: No abstract text available
    Text: R F RF2352 1 Preliminary B 3V CDMA DRIVER AMPLIFIER M IC R O -D E V IC E S T yp ic al A pp lication s % • TDMA/CDMA/FM Driver Amplifier • General Purpose Amplification • Low Noise Transmit Driver Amplifier • Commercial and Consumer Systems | $ | P ro du ct D escription


    OCR Scan     		PDF RF2352 900MHz 1QQ4131 DQQ41Ã RF2352 00DM16E TDD41B1

    RF2501

    Abstract: IFFT ampli ATIC91
    Text: RF2501 U FH MICRO-DEVICES VCO/H1GH-ISOLATION BUFFER AMPLIFIER Typical Applications • 2-way Paging • GPS Receivers • ISM Band Systems • Cellular Systems • Wireless Local Loop Systems • Wireless Modems Product Description The RF2501 is an integrated oscillator and buffer ampli­


    OCR Scan     		PDF RF2501 RF2501 10nFJ" SMV1104-35 F2501PC IFFT ampli ATIC91

    Untitled

    Abstract: No abstract text available
    Text: RF RF2504 Preliminary MICRO-DEVICES VCO/HIGH-ISOLATION BUFFER AM PLIFIER T y p ic a l A p p lic a tio n s • 2-Way Paging GPS Receivers • ISM Band Systems Cellular Systems • Wireless Local Loop Systems Low Voltage Applications P r o d u c t D e s c r ip tio n


    OCR Scan     		PDF RF2504 F2504 RF2504PCBA 250-M10C-)