Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes
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BG94-2S
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-2S Besondere Merkmale Features • • • • • • • • • • • • • • Unmontierter Laserbarren
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BG94-2S
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Q62702-P1654
Abstract: Q62702-P5503 94-2S bg94 SPL BG94 BG98
Text: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material
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940nm/980nm
81-9S
94-2S
98-2S
Q62702-P1654
Q62702-P5503
94-2S
bg94
SPL BG94
BG98
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material
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940nm/980nm
81-9S
94-2S
98-2S
81-2S
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bg94
Abstract: BG-94 60825-1
Text: Unmontierter Laserbarren 40 W cw . 120 W qcw Unmounted Laser Bars 40 W cw . 120 W qcw SPL BG81, SPL BG94 , SPL BS81 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes
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Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm Lead Pb Free Product - RoHS Compliant SPL BG94-20S Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • • • • • • • •
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BG94-20S
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 940 nm Un-mounted Laser Bars, 50% Fill-factor, 940 nm SPL BG94-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes InGa Al As/GaAs Material
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BG94-2S
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ll90_3
Abstract: SPL CG81-2S MNxx circuit laser diode pulsed SPL PL90_3 High power laser diode laserdioden CG81-2S high power laser Laser-Diode 808
Text: High-Power Laser Diodes Leistungslaserdioden 175 High-Power Laser Diodes . Leistungslaserdioden . 175 Summary of Types .
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GDOY7030
GDOY7041
GDOY7044
ll90_3
SPL CG81-2S
MNxx
circuit laser diode pulsed
SPL PL90_3
High power laser diode
laserdioden
CG81-2S
high power laser
Laser-Diode 808
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Q62702-P3573
Abstract: 975nm Q62702-P5244
Text: Unmontierter Laserbarren 10 W cw . 120 W qcw Unmounted Laser Bars 10 W cw . 120 W qcw SPL Byxx Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes
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808nm 1W laser diode
Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Text: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical
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O-220
D-93049
de/Semiconductor/products/37/376
B143-H7010-G1-X-7600
TS12975.
808nm 1W laser diode
980nm led
laser diode 905nm
led 940nm high power 1W
laser diodes 808nm 1w
905nm Plastic Pulsed Laser Diode
780nm laser diode module
SPL/780nm laser diode module
CG94
TO220 Semiconductor Packaging
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MNxx
Abstract: AMP 925 276 din 74 SPLLL90 P5243 SPL PL90_3 spl pl90 0 CG94 laser diode 780 nm PL90_3
Text: LEISTUNGSLASER HIGH POWER LASERS LEISTUNGSLASER HIGH-POWER LASERS SAFETY INSTRUCTIONS Products incorporating laser diodes will normally be classified as class 4 laser products according to IEC 60825-1 in a normal operation mode. Direct exposure of the human eye with laser radiation is therefore hazardous and must be strictly avoided.
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DIN912
GWOY6035
MNxx
AMP 925 276
din 74
SPLLL90
P5243
SPL PL90_3
spl pl90 0
CG94
laser diode 780 nm
PL90_3
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SPL LL90
Abstract: SPL PL90_3 spl pl90 0 CG94 LL90 CG81-2S LL85 Q62702P3558 2F94-2S 2Y94-2S
Text: LEISTUNGSLASER HIGH POWER LASERS LEISTUNGSLASER INFORMATIONEN ZUR HIGH -POWER LASERS AUGENSICHERHEIT Die Lichtabstrahlung von modernen Hochleistungs-LEDs ist stark genug, um das menschliche Auge zu schädigen. Blicken sie deshalb zum Schutz ihrer Augen nie aus kurzer Entfernung in das Lichtbündel einer LED. Die meisten Osram LEDs sind gemäß
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GWOY6124
GMOY7002
SPL LL90
SPL PL90_3
spl pl90 0
CG94
LL90
CG81-2S
LL85
Q62702P3558
2F94-2S
2Y94-2S
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808nm
Abstract: 940nm BS94 Q62702-P1654 Q62702-P1719 Q62702-P1733 Q62702-P3257 Q62702-P3259 bs79
Text: Unmounted Laser Bars 20 W cw . 100 W qcw SPL Bxxx Features • Unmounted monolithic linear array • High efficiency MOVPE-grown quantum well structure • Highly reliable strained layer InGa Al As/GaAs material • Standard wavelength selection is ± 3 nm, others on
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Q62702-P1654
Q62702-P1733
Q62702-P3259
808nm
940nm
BS94
Q62702-P1654
Q62702-P1719
Q62702-P1733
Q62702-P3257
Q62702-P3259
bs79
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2 Wavelength Laser Diode
Abstract: spl pl90 0 laser diode driver for free space communication PULSED LASER DIODE DRIVER pulsed laser diode GaAs 905 2Y98 2Y85 laser driver free space communication Laser-Diode 808 1550 laser diode
Text: OSRAM OPTO SEMICONDUCTORS H IGH POWER LASER DIODES OSRAM I N FOCUS: OSRAM OPTO SEMICONDUCTORS HIGH POWER LASER DIODES Useage of high power semiconductor lasers is growing rapidly in the industrial and automotive markets, primarily for pumping solidstate lasers Nd:YAG at
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D-93049
10010E
2 Wavelength Laser Diode
spl pl90 0
laser diode driver for free space communication
PULSED LASER DIODE DRIVER
pulsed laser diode GaAs 905
2Y98
2Y85
laser driver free space communication
Laser-Diode 808
1550 laser diode
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P5243
Abstract: sicherheits Q62702-P3573
Text: Unmontierter Laserbarren 10 W cw . 120 W qcw Unmounted Laser Bars 10 W cw . 120 W qcw SPL Byxx Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors Unmounted Laser Bars 10 W cw . 100 W qcw SPL Bxxx Preliminary Features • • • • • Unmounted monolithic linear array High-efficiency MOVPE-grown quantum-well structure Highly-reliable strained-layer lnGa AI As/GaAs material Standard wavelength selection is ± 3 nm, others on request
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