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Infineon Technologies AG BFR193L3E6327XTMA1 RF TRANS NPN 12V 8GHZ TSLP-3-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFR193L3E6327XTMA1	Cut Tape	9,485		1	1 $0.31 10 $0.211 100 $0.1608 1000 $0.13461 10000 $0.12411	Buy Now
	BFR193L3E6327XTMA1	Digi-Reel	9,485		1	1 $0.31 10 $0.211 100 $0.1608 1000 $0.13461 10000 $0.12411	Buy Now
	BFR193L3E6327XTMA1	Reel			15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	BFR193L3E6327XTMA1	Ammo Pack		17 Weeks, 1 Days	1	1 $0.364 10 $0.244 100 $0.18 1000 $0.18 10000 $0.18	Buy Now
	BFR193L3E6327XTMA1	Reel		13 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	BFR193L3E6327XTMA1		15,000		2,933	1 - 10 - 100 - 1000 - 10000 $0.1279	Buy Now
	BFR193L3E6327XTMA1		15,000		2,933	1 - 10 - 100 - 1000 - 10000 $0.1279	Buy Now
	BFR193L3E6327XTMA1		13,765		212	1 - 10 - 100 - 1000 $0.1248 10000 $0.1248	Buy Now
	BFR193L3E6327XTMA1		10,843		51	1 - 10 - 100 $0.323 1000 $0.3171 10000 $0.3131	Buy Now
	BFR193L3E6327XTMA1		6,115		532	1 - 10 - 100 - 1000 $0.1551 10000 $0.1551	Buy Now
	BFR193L3E6327XTMA1		4,388		62	1 - 10 - 100 $0.1506 1000 $0.1248 10000 $0.1151	Buy Now
Arrow Electronics	BFR193L3E6327XTMA1	Cut Strips	10,843	13 Weeks	1	1 $0.3289 10 $0.3269 100 $0.323 1000 $0.3171 10000 $0.3131	Buy Now
	BFR193L3E6327XTMA1		4,388		1	1 $0.31 10 $0.2092 100 $0.1506 1000 $0.1248 10000 $0.1151	Buy Now
Newark	BFR193L3E6327XTMA1	Cut Tape	11,794		1	1 $0.094 10 $0.094 100 $0.094 1000 $0.094 10000 $0.094	Buy Now

Rochester Electronics	BFR193L3E6327XTMA1		30,000		1	1 $0.1204 10 $0.1204 100 $0.1132 1000 $0.1023 10000 $0.1023	Buy Now
Chip1Stop	BFR193L3E6327XTMA1	Cut Tape	13,765			1 - 10 $0.235 100 $0.117 1000 $0.0958 10000 $0.0952	Buy Now
EBV Elektronik	BFR193L3E6327XTMA1		5,895,000	7 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BFR193L3E6327XTMA1		4,710,000		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFR 193L3 E6327 RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BFR 193L3 E6327		8,839			1 $0.31 10 $0.188 100 $0.141 1000 $0.135 10000 $0.125	Buy Now
Infineon Technologies AG BFR193L3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BFR193L3		70			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFR193L3E6327 Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BFR193L3E6327		750		1	1 $0.506 10 $0.325 100 $0.221 1000 $0.166 10000 $0.166	Buy Now
Chip 1 Exchange	BFR193L3E6327		19,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BFR193L3 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
BFR193L3	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFR193L3	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFR193L3E6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V TSLP-3	Original	PDF
BFR193L3E6327XTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V TSLP-3	Original	PDF

BFR193L3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Infineon Technologies transistor 4 ghz Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description	Original	PDF	BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Untitled Abstract: No abstract text available Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available	Original	PDF	BFR193L3 AEC-Q101
Untitled Abstract: No abstract text available Text: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available	Original	PDF	BFR193L3 AEC-Q101
infineon marking L2 Abstract: BFR193L3 Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR193L3 infineon marking L2 BFR193L3
infineon AN077 Abstract: No abstract text available Text: BFR193L3 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	PDF	BFR193L3 infineon AN077
Untitled Abstract: No abstract text available Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	PDF	BFR193L3
BFR193L3 Abstract: BFR340L3 marking FA Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR340L3 BFR193L3 BFR340L3 marking FA
Infineon Technologies transistor 4 ghz Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101	Original	PDF	BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA
marking code MS SOT323 Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860 Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)	Original	PDF	BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
MARKING 3FS Abstract: MARKING CODE 21E SOT23 marking 3ks Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29	Original	PDF	BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks
Untitled Abstract: No abstract text available Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR360L3
C5 MARKING TRANSISTOR Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2 Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)	Original	PDF	BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
transistor packing code 3f Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)	Original	PDF	BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 transistor packing code 3f marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
diode Marking Code b3 Abstract: BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 BFR19 Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)	Original	PDF	IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 diode Marking Code b3 BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 BFR19

BC846 Infineon Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850 Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)	Original	PDF	BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Untitled Abstract: No abstract text available Text: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package	Original	PDF	BFR380L3
Untitled Abstract: No abstract text available Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)	Original	PDF	IEC61000-4-2 IEC61000-4-4 IEC61000-4-5
Untitled Abstract: No abstract text available Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)	Original	PDF	IEC61000-4-2 IEC61000-4-4 IEC61000-4-5
BGT24MTR11 Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
BFR94 Abstract: No abstract text available Text: BFR949L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	BFR949L3 BFR94
Untitled Abstract: No abstract text available Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)	Original	PDF	IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD8V0L1B-02LRH
ESD8V0L1B-02LRH Abstract: ESD8V0L1B-02EL TSLP-2-18 TSLP-2-17 PF137 Text: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)	Original	PDF	IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD8V0L1B-02LRH ESD8V0L1B-02EL TSLP-2-18 TSLP-2-17 PF137
E6327 Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74 Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3	Original	PDF	BAV70. BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U BAV70F* E6327 marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74

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BFR193L3 Price and Stock

Infineon Technologies AG BFR193L3E6327XTMA1

Infineon Technologies AG BFR 193L3 E6327

Infineon Technologies AG BFR193L3

Infineon Technologies AG BFR193L3E6327

BFR193L3 Datasheets (4)

BFR193L3 Datasheets Context Search

Infineon Technologies transistor 4 ghz

Untitled

Untitled

infineon marking L2

infineon AN077

Untitled

BFR193L3

Infineon Technologies transistor 4 ghz

marking code MS SOT323

MARKING 3FS

Untitled

C5 MARKING TRANSISTOR

transistor packing code 3f

diode Marking Code b3

BC846 Infineon

XM0830SJ

Untitled

Untitled

Untitled

BGT24MTR11

BFR94

Untitled

ESD8V0L1B-02LRH

E6327