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    BDX53BG Search Results

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    BDX53BG Price and Stock

    Rochester Electronics LLC BDX53BG

    TRANS NPN DARL 80V 8A TO220
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    DigiKey BDX53BG Bulk 686
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    onsemi BDX53BG

    Trans Darlington NPN 80V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: BDX53BG)
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    Avnet Americas BDX53BG Tube 10 Weeks 1,700
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    Mouser Electronics BDX53BG 291
    • 1 $1.28
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    • 100 $0.601
    • 1000 $0.404
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    Verical BDX53BG 80,250 793
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    BDX53BG 1,097 793
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    BDX53BG 26 15
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    Arrow Electronics BDX53BG 26 1
    • 1 $0.4082
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    Newark BDX53BG Bulk 302 1
    • 1 $0.981
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    Future Electronics BDX53BG Tube 10 Weeks 1,400
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    Onlinecomponents.com BDX53BG
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    Rochester Electronics BDX53BG 82,921 1
    • 1 $0.4207
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    • 100 $0.3955
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    ComSIT USA BDX53BG 1,050
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    Avnet Silica BDX53BG 1,500 11 Weeks 50
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    EBV Elektronik BDX53BG 12 Weeks 50
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    New Advantage Corporation BDX53BG 1,200 1
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    BDX53BG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDX53BG On Semiconductor Bipolar Power T0220 NPN 8A 80V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF

    BDX53BG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BOX 53C IC

    Abstract: BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original
    PDF BDX53B, BDX53C BDX54B, BDX54C BDX53B/D BOX 53C IC BOX 53C darlington power transistor box 54c IC BDX53BG BDX54CG pin orientation for bdx53c transistor BDX54B

    Untitled

    Abstract: No abstract text available
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original
    PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D

    pin orientation for bdx53c transistor

    Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original
    PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D pin orientation for bdx53c transistor box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100

    box 53c

    Abstract: BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general-purpose amplifier and low-speed switching applications. Features •ăHigh DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original
    PDF BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D box 53c BDX53BG 100 amp npn darlington power transistors AMP contact assembly bdx53cg 5 amp npn darlington power transistors 500 watts amplifier box 53c IC 1N5825 BDX53B