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    BD506 Price and Stock

    JRH Electronics 805-061-16NF8-4BD506

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    DigiKey 805-061-16NF8-4BD506 1
    • 1 $1486.04
    • 10 $1486.04
    • 100 $1307.7108
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    JRH Electronics 805-061-16Z18-7BD506

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    DigiKey 805-061-16Z18-7BD506 1
    • 1 $1527.92
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    • 100 $1344.5656
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    JRH Electronics 805-061-16MT8-6BD506

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    DigiKey 805-061-16MT8-6BD506 1
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    JRH Electronics 805-061-16MT9-10BD506

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    DigiKey 805-061-16MT9-10BD506 1
    • 1 $1653.31
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    • 100 $1454.9164
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    JRH Electronics 805-061-16ZNU8-7BD506

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    DigiKey 805-061-16ZNU8-7BD506 1
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    BD506 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD506 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD506 Motorola Motorola Transistor Datasheets Scan PDF
    BD506 Motorola The European Selection Data Book 1976 Scan PDF
    BD506 Motorola European Master Selection Guide 1986 Scan PDF
    BD506 Motorola PNP silicon audio transistor. 10 W, 20 V. Scan PDF
    BD506 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD506 Unknown Cross Reference Datasheet Scan PDF
    BD506 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD506 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD506 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD506 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD506-1 Motorola PNP silicon audio transistor. 10 W, 20 V. Scan PDF
    BD506-1 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD506-5 Motorola PNP silicon audio transistor. 10 W, 20 V. Scan PDF
    BD506-5 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BD506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BD506N-BD506P 50 AMP Block Diodes 特征 BLOCK DIODE FEATURES .大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die construction .高浪涌承受能力.High surge current capability


    Original     		PDF BD506N-BD506P 50Ampere BD506-N BD506N BD506P BD506-P BD506N BD506P

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    5105 GE

    Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
    Text: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS


    OCR Scan     		PDF b3b7E54 BD505. BD507, BD509 BD506 BD508 BD510 BDS06. BD506-1, 5105 GE Motorola 506 uniwatt BD507 BD505 transistor f 506 transistor BD 135 BD506-5

    BD506

    Abstract: BD509 BD510 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507
    Text: BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PN P SILIC O N A U D IO T R A N S IS T O R S PN P SILIC O N A N N U LA R * 20 - 30 - 40 VOLTS 10 WATTS T R A N S IS T O R S . . designed for complementary symmetry audio circuits • Excellent Current G ain Linearity — 1.0 m A dc to 1.0 A d c


    OCR Scan     		PDF BD506 BD508 BD510 BD505. BD507, BD509 BDS06. BD506-1, BD506-5, BD508 BD506 BD509 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507

    B0508

    Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
    Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS


    OCR Scan     		PDF b3b7E54 BD505. BD507, BD509 BD506. BD506 506-BD B0508 transistor f 506 506bd BD507 uniwatt BD510 80509 BD505

    Motorola MPSU45

    Abstract: b0507 MPSU45 MPS-U10 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued CASE 152 STYLE 1: PIN 1. 2. 3. EMITTER BASE COLLECTOR (COLLECTOR CONNECTED TO TAB) Resistive Sw itching HS t, ^s Max Max ts lcCont Amps Max VcEO (sus) Volts Min 0.5 0.8 1 2 Device Type ^FE M in/M ax @ lc Am p


    OCR Scan     		PDF MPS-U10 MPS-U60 MPS-U02 MPS-U52 MPS-U03 MPS-U04 BD505 BD506 BD507 MPS-U01 Motorola MPSU45 b0507 MPSU45 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TY 507

    Abstract: 1NA1C BD509 bd507
    Text: motorola Tt -c x s t r s / r sc 6367254 MOTOROLA SÇ_JXSTRS/R F DËTJb3b7ES4 G DflO Sn □ 96D D 80599 T -J J - 07 BD505 BD507 BD509 MOTOROLA •a SEMICONDUCTOR TECHNICAL DATA NPN SILICO N A U D IO T R AN SISTO R S NPN S ILIC O N A N N U LA R E 20 - 30 - 40 VOLTS


    OCR Scan     		PDF BD505 BD507 BD509 BD506, BD508, BD510 BDS05. TY 507 1NA1C BD509

    BF381

    Abstract: MPSU45 BD419 MPSU95 transistor mpsu45 B0415 BF382 BF460 b0507 BF468 MOTOROLA
    Text: M E D IU M PO W ER U N IW A TT T R A N S IS T O R S F o r a p p lic a tio n s re q u irin g h ig h e r p o w e r d is s ip a tio n th a n th a t o f th e sta n d a rd T O - 9 2 p a ck ag e, M o to r o la h a s 'd e v e lo p e d th e U n iw a tt case. In th is p la stic -e n c a p su la te d p ack ag e, w h ic h is slig h tly larger th a n the


    OCR Scan     		PDF BD510 BD515 BD516 BD517 BD518 BD519 BF381 MPSU45 BD419 MPSU95 transistor mpsu45 B0415 BF382 BF460 b0507 BF468 MOTOROLA

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175