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    BD249 Search Results

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    BD249 Price and Stock

    onsemi BD249C

    POWER 25A 100V NPN
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    ComSIT USA BD249C 8
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    onsemi BD249CG

    POWER 25A 100V NPN
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    Bourns Inc BD249B-S

    TRANS NPN 80V 25A SOT93
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    DigiKey BD249B-S Tube 900
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    Avnet Abacus BD249B-S 143 Weeks 6,990
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    Bourns Inc BD249C-S

    TRANS NPN 100V 25A SOT93
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    DigiKey BD249C-S Tube 900
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    Avnet Abacus BD249C-S 143 Weeks 10
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    Bourns Inc BD249A-S

    TRANS NPN 60V 25A SOT93
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    DigiKey BD249A-S Tube 900
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    BD249 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD249 Bourns NPN SILICON POWER TRANSISTORS Original PDF
    BD249 Power Innovations NPN SILICON POWER TRANSISTORS Original PDF
    BD249 Mospec Complementary Silicon High-Power Transistor Scan PDF
    BD249 Mospec POWER TRANSISTORS(25A,125W) Scan PDF
    BD249 Motorola European Master Selection Guide 1986 Scan PDF
    BD249 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD249 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD249 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD249 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD249 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD249 Unknown Cross Reference Datasheet Scan PDF
    BD249 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD249 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
    BD249 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    BD249 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BD249A Bourns NPN SILICON POWER TRANSISTORS Original PDF
    BD249A Power Innovations NPN SILICON POWER TRANSISTORS Original PDF
    BD249A Mospec Complementary Silicon High-Power Transistor Scan PDF
    BD249A Mospec POWER TRANSISTORS(25A,125W) Scan PDF
    BD249A Motorola European Master Selection Guide 1986 Scan PDF

    BD249 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD250

    Abstract: BD250A BD250C BD249 BD250B TIS635AA
    Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


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    PDF BD250, BD250A, BD250B, BD250C BD249 OT-93 BD250B BD250A BD250 BD250A BD250C BD250B TIS635AA

    BC125

    Abstract: BD250 BD246 EQUIVALENT BD246 BD246C BD249 BD246A BD246B BD250A BD250B
    Text: Inchange Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BD249/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current PINNING PIN DESCRIPTION 1 Base


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    PDF BD250/A/B/C BD249/A/B/C BD246 BD246A BD246B BD246C BD250/250A BD250B/250C BC125 BD250 BD246 EQUIVALENT BD246 BD246C BD249 BD246A BD246B BD250A BD250B

    BD250

    Abstract: bd249 BD246 BD249 EQUIVALENT BD246A BD246B BD246C BD250A BD250B BD250C
    Text: SavantIC Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2


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    PDF BD250/A/B/C BD249/A/B/C BD246 BD246A BD246B BD246C BD250 bd249 BD246 BD249 EQUIVALENT BD246A BD246B BD246C BD250A BD250B BD250C

    BD250C

    Abstract: bd250
    Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


    Original
    PDF BD250, BD250A, BD250B, BD250C BD249 OT-93 BD250 BD250A BD250B SAS636AB

    BD249

    Abstract: BD249C transistor BD249 b BD249 EQUIVALENT BD249A BD249B BD250
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


    Original
    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249B BD249A BD249 BD249C transistor BD249 b BD249 EQUIVALENT BD249A BD249B

    bd249c equivalent

    Abstract: No abstract text available
    Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W


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    PDF BD249C O-218 BD249C/D bd249c equivalent

    BD249

    Abstract: BD249 EQUIVALENT BD249C transistor BD249 b BD249A BD249B BD250
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


    Original
    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249B BD249A BD249 BD249 EQUIVALENT BD249C transistor BD249 b BD249A BD249B

    bd249c equivalent

    Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C
    Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W


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    PDF BD249C O-218 BD249C MJE180 C-2688, bd249c equivalent c2688 c2688 transistor tRANSISTOR c2688

    BD249

    Abstract: BD249 EQUIVALENT BD249C BD250 BD249A BD249B
    Text: SavantIC Semiconductor Product Specification BD249/A/B/C Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2


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    PDF BD249/A/B/C BD250/A/B/C BD249 BD249A BD249B BD249C BD249 BD249 EQUIVALENT BD249C BD250 BD249A BD249B

    transistor BD249 b

    Abstract: transistor BD249C BD249C
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


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    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249 BD249A BD249B SAS635AB transistor BD249 b transistor BD249C

    BD249

    Abstract: BD249C
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


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    PDF BD249, BD249A, BD249B, BD249C BD250 global/pdfs/TSP1203 OT-93 BD249 BD249A BD249B

    bd249

    Abstract: BD249 EQUIVALENT bd249 equivalents BD249A BD249B BD249C BD250
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current


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    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249 BD249A BD249B bd249 BD249 EQUIVALENT bd249 equivalents BD249A BD249B BD249C

    BD250C

    Abstract: BD249C
    Text: BD249C / BD250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO sus = 100V (Minimum) • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.


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    PDF BD249C BD250C BD249C BD250C

    BD249C

    Abstract: BD250C
    Text: BD249C, 250C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO sus = 100V (Minimum) • DC Current Gain hFE = 25 (Minimum) at IC = 1.5A.


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    PDF BD249C, BD249C BD250C BD249C BD250C

    transistor pnp a110

    Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT
    Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125


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    PDF BD249C BD249C/D transistor pnp a110 free transistor and ic equivalent data transistor pnp a110 EQUIVALENT

    BD250C

    Abstract: BD249 BD250
    Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


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    PDF BD250, BD250A, BD250B, BD250C BD249 global/pdfs/TSP1203 OT-93 BD250 BD250A BD250B

    BD249C equivalent

    Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
    Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125


    Original
    PDF BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram

    BD250C

    Abstract: bd250 BD249 BD250A BD250B
    Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available


    Original
    PDF BD250, BD250A, BD250B, BD250C BD249 OT-93 BD250B BD250A BD250C bd250 BD250A BD250B

    bd250

    Abstract: No abstract text available
    Text: BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD249 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current


    OCR Scan
    PDF BD250, BD250A, BD250B, BD250C BD249 OT-93 BD250 BD250A BD250B

    bd249

    Abstract: BD249C bd249a
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current


    OCR Scan
    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249 BD249A BD249B

    BD249 TEXAS INSTRUMENTS

    Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
    Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P


    OCR Scan
    PDF BD249, BD249A, BD249B, BD249C BD250A-C BD249 BD149A BD249B 40PEP BD249 TEXAS INSTRUMENTS BD149 BD249C TEXAS INSTRUMENTS B0249C B0249A 3055 5C pnp transistor B0249 BD249A

    B0249C

    Abstract: bd249 BD249C
    Text: BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS Copyright <D 1997, Power Innovations Limited, UK « JUN E 1973 * REVISED M ARCH 1997 Designed for Complementary Use with the BD250 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current


    OCR Scan
    PDF BD249, BD249A, BD249B, BD249C BD250 OT-93 BD249 BD249A BD249B B0249C

    TIP 29 transistor

    Abstract: BD250C transistor BD 240 transistor tip 3055 transistor tip 62 bd250 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn
    Text: BD250, BD250A, BD250B, BD250C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD249A-C 125 W at 25 °C Case Temperature 15 A rated Collector Current Min f T of 3 M H z at 10 V , 1 A


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    PDF BD250, BD250A, BD250B, BD250C BD249A-C BD250 BD250A BD250B 40PEP TIP 29 transistor BD250C transistor BD 240 transistor tip 3055 transistor tip 62 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn

    BD249

    Abstract: D250C BD2436 BD250C BD250A BD250 D249C BD249A BD249B BD249C
    Text: MOS PEC COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS PNP BD250 BD250A BD250B BD250C NPN BD249 BD249A BD249B BD249C . designed for use in general purpose power amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining Voltage VCEo MM = 45V(Min)- BD249.BD250


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    PDF BD249 BD250 BD249A BD250A BD249B BD250B BD249C, BD250C D250C BD2436 BD250C BD250 D249C BD249C