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    BD 242 TRANSISTORS Search Results

    BD 242 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD 242 TRANSISTORS Datasheets Context Search

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    BD 242 transistors

    Abstract: No abstract text available
    Text: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,


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    PDF T0-220B BD242 BD242A BD242B Tc425Â ED242 0870E BD 242 transistors

    BD242B

    Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors
    Text: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- *$ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf* 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT


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    PDF BD242B T0-220B BD242 BD242A bd242Ã 241B BOX69477 BD 242 transistors

    ET 8211

    Abstract: SCHEMA BD242C LI 20 AB bd242
    Text: BD 242, BD 242A BD 242 B, BD 242 C PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS PNP SILIC IU M , BASE E P ITAXIEE Compì, of BO 241, A ,B ,C PRELIM INARY DATA NOTICE P R E LIM IN A IR E • Complementary symetry stages amplifiers 45 V I -6 0 V i —80 V


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    PDF O-220 drawingCB-117on CB-117 ET 8211 SCHEMA BD242C LI 20 AB bd242

    SDT 9202

    Abstract: No abstract text available
    Text: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A


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    PDF BD136 O-126 O-220 SDT 9202

    BO 241 A

    Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
    Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A


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    PDF O-220 drawingCB-117on BO 241 A bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410

    D242B

    Abstract: 3120c BD240C BD242 BD242A BD242B T0-22OB 8700bo
    Text: b U Z4Z • D U ^ M " DU PÏÏP SILICON EPITAXIAL BASE POWER TRANSISTORS I ; m ic r o e l e c t r o n i c s CASE T0-22OB THE BD 24 2 , BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,


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    PDF T0-22OB Tc425Â BD242 BD242A BD242B U1LTA-25Â 8700Bo O87OE D242B 3120c BD240C BD242B T0-22OB

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055

    BD 139 140

    Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
    Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)


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    PDF O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    TIP 34 pnp

    Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
    Text: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B


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    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    tip 220

    Abstract: SGS TIP 32 BD NPN transistors 177 tip 31 mje370 transistor bd 126 To 126 TIP31 NPN Transistor diagram mje520 2n 4918 9 218
    Text: ¿t 7 SGS'THOMSON GMO SIMSi[LI(S?[MM(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR TO 39 SOT 194 SOT 93 TOP 31 ISOWATT 218 TO 220 TO 3 ISOWATT 220 EPITAXIAL BASE TRANSISTORS Epitaxial base - Ic m : 1 -*• 3 A, Vc e o : 22 — 100 V Internal schem atic diagram s


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    TIP 29 transistor

    Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
    Text: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature


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    PDF TIP32, T1P32A, TIP32B. TIP32C TIP31, TIP31A, TIP31B, TIP31C TIP32 TIP32A TIP 29 transistor TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


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    PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    transistor tip 109

    Abstract: j1n transistor bd 109 transistor TIP30 transistor riP30 bd 125 equivalent TEXAS INSTRUMENTS TIP29 Texas Instruments TIP30C Transistor tip29 TIP308
    Text: TYPES TIP30. TIP30A, TIP30B. TIP30C P-N P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH T IP 29, T IP 2 9 A , T IP 29B , TIP29C


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    PDF TIP30. TIP30B, TIP30C TIP29, TIP29A, TIP29B, TIP29C TIP30 TIP30A TIP30B transistor tip 109 j1n transistor bd 109 transistor TIP30 transistor riP30 bd 125 equivalent TEXAS INSTRUMENTS TIP29 Texas Instruments TIP30C Transistor tip29 TIP308

    bd 125 equivalent

    Abstract: TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP35 TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp
    Text: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP36, TIP36A , TIP36B, TIP36C


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    PDF TIP35, TIP35A, TIP35B, TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A bd 125 equivalent TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp

    transistor tip 31c

    Abstract: TIP 31 Transistor TIP 29 transistor tip 31 Texas Instruments TIP31C tip318 transistor DA 2688 TIP 31 EQUIVALENT TIP31B TIP31C
    Text: TYPES TIP31. TIP31A. TIP31B, TIP31C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P J-1 F IE R A N D H IG H - S P E E D - S W IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W IT H T IP32, T IP 3 2 A , T IP 3 2 B , T IP 3 2 C


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    PDF TIP31. TIP31A. TIP31B. TIP31C TIP32, TIP32A, TIP32B, TIP32C TIP31 TIP31A transistor tip 31c TIP 31 Transistor TIP 29 transistor tip 31 Texas Instruments TIP31C tip318 transistor DA 2688 TIP 31 EQUIVALENT TIP31B

    TIP34

    Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
    Text: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C


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    PDF TIP34, TIP34A, TIP34B, TIP34C TIP33, TIP33A, TIP33B, TIP33C TIP34 TIP34A TIP34C equivalent TIP33C texas instruments tip34 TIP33 TIP33A TIP33B TIP34B

    241A

    Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
    Text: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,


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    PDF T0-220B Tc425Â BD241 BD241A BD241B -3-S93363, 241A 241B BD NPN transistors 312c

    BD NPN transistors

    Abstract: BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    PDF O-128 O-117 O-129 BD NPN transistors BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139

    BD203

    Abstract: bd204 BD201 BD 203 BD 201 transistors b0203 BD 202 transistors THP1
    Text: BD 201 - BD 203 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Hohe Spitzenleistung • High peak power • Hohe Stromverstärkung


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    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    PDF O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128

    B0415

    Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
    Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2


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    PDF BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063