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    LM143H/883 Rochester Electronics LLC Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8 Visit Rochester Electronics LLC Buy
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    Central Semiconductor Corp BCY58-IX TIN/LEAD

    Transistor GP BJT NPN 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY58-IX TIN/LEAD)
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    Central Semiconductor Corp BCY58-VIII

    Trans GP BJT NPN 32V 100mA 3-Pin TO-18 0 - Boxed Product (Development Kits) (Alt: BCY58-VIII)
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    Central Semiconductor Corp BCY58-VIII TIN/LEAD

    Transistor GP BJT NPN 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY58-VIII TIN/LEA)
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    Central Semiconductor Corp BCY58-X

    Trans GP BJT NPN 32V 100mA 3-Pin TO-18 0 - Boxed Product (Development Kits) (Alt: BCY58-X)
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    Central Semiconductor Corp BCY58-VII TIN/LEAD

    Transistor GP BJT NPN 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY58-VII TIN/LEAD)
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    BCY 58 Datasheets (212)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY58 Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Original PDF
    BCY58 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Original PDF
    BCY58 STMicroelectronics LOW NOISE AUDIO AMPLIFIER Original PDF
    BCY58 Central Semiconductor BJT: NPN: Silicon Epitaxial Transistor: IC 0.2A Scan PDF
    BCY58 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BCY58 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BCY58 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY58 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BCY58 Infineon Technologies TRANS GP BJT NPN 32V 0.2A 3TO-18 Scan PDF
    BCY58 ITT Semiconductors Transistors 1980 Scan PDF
    BCY58 Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Scan PDF
    BCY58 Micro Electronics Semiconductor Devices Scan PDF
    BCY58 Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    BCY58 Micro Electronics Semiconductor Device Data Book Scan PDF
    BCY58 Motorola Motorola Transistor Datasheets Scan PDF
    BCY58 Motorola The European Selection Data Book 1976 Scan PDF
    BCY58 Motorola European Master Selection Guide 1986 Scan PDF
    BCY58 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BCY58 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY58 Unknown Transistor Replacements Scan PDF
    ...

    BCY 58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65e7

    Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
    Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.


    OCR Scan     		PDF Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65

    TRANSISTOR A104

    Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
    Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general


    OCR Scan     		PDF BCY58 Ic-10â R2-700ohm TRANSISTOR A104 BCY59C BCY 85 A104 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15

    BCY79

    Abstract: bcy 78 bcy 79
    Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages


    OCR Scan     		PDF i-10mA 990i2, BCY79 bcy 78 bcy 79

    BCY 59

    Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
    Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­


    OCR Scan     		PDF Q60203- BCY 59 BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


    OCR Scan     		PDF BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59

    BCY 68

    Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors


    OCR Scan     		PDF 23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 68 0431I BCY68 BCY 59

    BCY59

    Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
    Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors


    OCR Scan     		PDF 23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 85 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G

    A404

    Abstract: No abstract text available
    Text: BCY 58 BCY 59 GENERAL DESCRIPTION i The BCY 58 and BCY 59 are NPN silic o n planar e p ita x ia l tra n s is to r. I t featu res low satu ratio n voltage and high gain. I t i s intended for use as audio frequency am p lifier, magnetic core d riv er and general


    OCR Scan     		PDF 390aW 390mW -65eC 200mA TA-150 A404

    1B57

    Abstract: BCY78 BCY79
    Text: SILICON PLANAR PNP BCY78 BCY79 LO W -N O IS E A U D IO A M P L IF IE R S The BCY 78 and BCY 79 are silicon planar epitaxial PNP transistors in Jed ecT O -18 metal case. They are designed fo r use in audio driver and low -noise in p u t stages. The com plem entary NPN types are respectively the BCY 58 and BCY 59.


    OCR Scan     		PDF BCY78 JedecTO-18 G-1B57 BCY79 G-1860 1B57 BCY78 BCY79

    BCY792

    Abstract: bcy 79 Q62702-C327 BCY78 BCY77 BCY 78 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 78-IX
    Text: 5SC T> m fi23SbOS D00432S 7 « S I E G r . PNP Silicon Planar Transistors BCY77 D _BCY78 BCY 79 25C 04325 SIEMENS A K T I E N 6 E S E L L SCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF 23Sb05 QQ0432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J BCY792 bcy 79 BCY78 BCY77 BCY 78 78-IX

    BCY77

    Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


    OCR Scan     		PDF BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor

    1w200

    Abstract: No abstract text available
    Text: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.


    OCR Scan     		PDF BCY58 BCY59 390aW tof20G 200mA IG-10Cte* 1w200

    BCY77VII

    Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


    OCR Scan     		PDF BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor

    Q62702-C327

    Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792
    Text: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF 53SbOS G00432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J Q62702-C327 Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792

    tfk 731

    Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
    Text: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W


    OCR Scan     		PDF

    BCY59IX

    Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
    Text: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES


    OCR Scan     		PDF 00flt BCY58 BCY59-VII, BCY59, BCY58/BCY59) BCY59IX bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii

    BCY59

    Abstract: BCY58 BcY591
    Text: BCY58 BCY59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial IMPN transistors in Jledec T O -1 8 metal case. They are intended fo r use in audio in p u t stages, driver stages and low-noise in put stages. The com plem entary PNP types are respectively the BCY 78 and !BCY 79.


    OCR Scan     		PDF BCY58 BCY58 BCY59 BCY59 BcY591

    BCY79

    Abstract: BCY78 bcy 78 bcy 79
    Text: BCY78 BCY 79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The B C Y 78 and B C Y 79 are silicon planar epitaxial P N P transistors in J e d e c T O - 1 8 metal case. T h e y are designed fo r use in audio driver and lo w -n oise in p u t stages. The com plem entary N P N types are respectively the B C Y 58 and B C Y 59.


    OCR Scan     		PDF BCY78 BCY79 JedecTO-18 -10mA BCY79 bcy 78 bcy 79

    BCY59

    Abstract: BCY58
    Text: BCY 58 BCY59 SILICON PLANAR NPN LOW-NOISE A UDIO AM PLIFIERS The B C Y 5 8 and B C Y 5 9 are s ilic o n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -1 8 m etal case. T he y are in te n de d fo r use in au d io in p u t stages, d riv e r stages and lo w -n o is e in p u t stages.


    OCR Scan     		PDF BCY58 BCY58 BCY59 BCY59 100Hz

    59VIII

    Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018
    Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ


    OCR Scan     		PDF BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018

    59VIII

    Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII
    Text: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at


    OCR Scan     		PDF BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII BCY79VII 79VIII BFW10 59VIII 79-IX BCY 68 BCY58X BCY 62 59vii BHARAT elek BCY58VIII

    Q62702-C327

    Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR
    Text: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die


    OCR Scan     		PDF Q62702- -C327-V1 -C327-V2 -C327-V3 Q60203- -Y78-G -Y78-H Q62702-C327 BCY79 BCY 12 C327 78-VIII 79IX 34RR

    transistor BC 584

    Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
    Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4


    OCR Scan     		PDF bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548

    bc 170

    Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t


    OCR Scan     		PDF 100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107