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    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D • b b S B ' m 002051=5 5 ■ BUK542-50A BUK542-50B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK542-50A BUK542-50B BUK542

    bfr93

    Abstract: DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17
    Text: N AMER PHILIPS/DISCRETE S5E D • ^53^31 QGlfiG7S Q ■ BFR93 T -3I-I7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a SOT-23 plastic envelope. It is primarily intended fo r use in u.h.f. and microwave amplifiers in thick and thin-film circuits, such as in aerial amplifiers, radar systems, oscilloscopes,


    OCR Scan     		PDF BFR93 OT-23 BFT93. T-31-17 bfr93 DBFR93 T-989 BFR91 BFT93 sot-23 marking jn T-31-17

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE hfaSB^l 0Q1A717 3 • 2SE D BUS12 BUS12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


    OCR Scan     		PDF 0Q1A717 BUS12 BUS12A bbS3l31 0Q1S723 Q0167S4