1N4740A
Abstract: 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a 1N4729A 1N4730A
Text: bar DO-41 1 Watt Zener Diodes Vi Volts Tolerance 5% lit (m A) D • b5D113D 003T513 757 « N S C S DO-41 1.3 Watt Zener Diodes n a t l s e p i i c o n d ( D I S C R E T E ) Zz (Ö ) •r (MÄ) (Volts) Tolerance 5% (mA) Zz m Ir (HA) 3.3 1N4728A 76 10 100
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DO-41
b5D113D
1N4728A
BZX85C3V3
1N4729A
BZX85C3V6
1N4730A
BZX85C3V9
1N4731A
1N4740A
1N4742A 12 volt zener diode
1N4742A
1N4732A
1N4745A
ZENER 1
BZX8SC
ln4744a
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BAV99
Abstract: BAW56 sot23 baw56 t22 sot23
Text: S e m ic o n d u c t o r BAW56 tß Discrete POW ER & Signal Technologies National BAW56 CONNECTION DIAGRAMS JH A1 HI SOT-23 ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 2 5'C unless otherwise noted
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OT-23
BAW56
BAV99
bS0113D
0040S5S
BAW56
sot23 baw56
t22 sot23
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PN4258
Abstract: process 65
Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*
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PN4258
MMBT4258
PN4258
D040b
process 65
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T3D diode
Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT451N
b501130
T3D diode
T3D 55 diode
T3D 45 diode
Diode T3D 55
T3D 01 DIODE
T3D 43 diode
T3D 65 diode
DIODE T3D 95
diode T3D
Diode T3D 30
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B5G1
Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high
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NDP605A/NDP605B,
NDP606A/NDP606B
0-1B0-534
B5G1
ndp605A TO-220
NDP606A
NDP605A
NDP605B
NDP606B
zener diode u41
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Untitled
Abstract: No abstract text available
Text: BSS64 Discrete POWER & Signal Technologies National m y y S e m i c o n d u c t o r “ BSS64 Mark: U3 NPN General Pupose Amplifier This device is designed far general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.
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BSS64
bS01130
bSD113G
G04Cm4
b5D113D
04CH15
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DIODE 5H
Abstract: mmbd1201 fw sot-23 5H MARKING BD4148 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE Diode Marking 1p SOT-23
Text: MMBD4148 I SE I CC I CA i Discrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r M M B D 4148 / SE / CC / CA FI r CONNECTION DIAGRAMS 5H TU ET M M B D 4148 M M B D 4148C C 5H Dò M M B D 4148C A M M B D 4148S E -V t + * t +* 1 D6 D4
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MMBD4148
OT-23
MMBD4148CA
MMBD4148CC
MMBD4148SE
414SSE
414SCC
4141C
MMBD1201-1205
DIODE 5H
mmbd1201
fw sot-23
5H MARKING
BD4148
Diode Marking 1p SOT-23
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