B1100
Abstract: B180 sma marking CODE 63 SMB MARKING EX B170/B B170B B1100B B170 B180B B190
Text: B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly
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B170/B
B1100/B
B1100
B170B
B180B
B190B
B1100B
DS30018
B1100
B180
sma marking CODE 63
SMB MARKING EX
B1100B
B170
B190
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B1100
Abstract: B180 sma marking 63 B1100B B170 B170B B180B B190 B190B
Text: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · Guard Ring Die Construction for Transient Protection · · High Temperature Soldering: 260°C/10 Second at Terminal
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B1100
B170B
B180B
B190B
B1100B
B170/B
B1100/B
DS30018
B1100
B180
sma marking 63
B1100B
B170
B190
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B1100 DIODES INC
Abstract: B180 63 marking, sma package diode B1100 B170/B B170B B1100B B170 B180B B190
Text: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · · High Temperature Soldering: 260°C/10 Second at Terminal Guard Ring Die Construction for Transient Protection
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B1100
B170B
B180B
B190B
B1100B
B170/B
B1100/B
DS30018
B1100 DIODES INC
B180
63 marking, sma package diode
B1100
B1100B
B170
B190
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marking code 63, sma package
Abstract: marking b1100 sma b1100 marking Sma marking CODE 63 B180
Text: SPICE MODELS: B170 B180 B190 B1100 B170B B180B B190B B1100B B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · · High Temperature Soldering: 260°C/10 Second at Terminal Guard Ring Die Construction for Transient Protection
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B1100
B170B
B180B
B190B
B1100B
B170/B
B1100/B
DS30018
marking code 63, sma package
marking b1100 sma
b1100 marking
Sma marking CODE 63
B180
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B1100
Abstract: B120 B130L B140 B160 B170 B180 CD214A-B120 JEDEC DO-214AC DC COMPONENTS
Text: Features • ■ ■ SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B120
B1100
DO-214AC
e/IPA0303
B120
B130L
B140
B160
B170
B180
CD214A-B120
JEDEC DO-214AC DC COMPONENTS
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B180
Abstract: No abstract text available
Text: B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · Guard Ring Die Construction for Transient Protection · · High Temperature Soldering: 260°C/10 Second at Terminal Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
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B170/B
B1100/B
DS30018
B180
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B180
Abstract: No abstract text available
Text: B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly Low Power Loss, High Efficiency
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B170/B
B1100/B
DS30018
B180
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B170/B
Abstract: marking code 63, sma package DSAE007156 B180
Text: B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly
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B170/B
B1100/B
DS30018
marking code 63, sma package
DSAE007156
B180
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B180
Abstract: No abstract text available
Text: B170/B - B1100/B Green 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly
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B170/B
B1100/B
DS30018
B180
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Sma marking CODE 63
Abstract: B170/B sma marking code 63 marking, sma package diode B1100/B SMA diode marking 79 J-STD-020D sma marking 63 B170 marking code 63, sma package
Text: B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection Ideally Suited for Automated Assembly
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B170/B
B1100/B
J-STD-020D
DS30018
Sma marking CODE 63
sma marking code
63 marking, sma package diode
B1100/B
SMA diode marking 79
J-STD-020D
sma marking 63
B170
marking code 63, sma package
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B180
Abstract: B1100 B120 B130L B140 B160 B170 CD214A-B120 63 marking, sma package diode
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B120
B1100
DO-214AC
B180
B120
B130L
B140
B160
B170
CD214A-B120
63 marking, sma package diode
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B180
Abstract: No abstract text available
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B120
B1100
DO-214AC
B180
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63 marking, sma package diode
Abstract: diode SMA marking code 14 B1100 DIODE MARKING 63 DO-214AC marking 406 diode -rectifier diode b130 schottky B180 B120 B130L B160
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B120
B1100
DO-214AC
63 marking, sma package diode
diode SMA marking code 14
B1100 DIODE
MARKING 63 DO-214AC
marking 406 diode -rectifier
diode b130 schottky
B180
B120
B130L
B160
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B190
Abstract: B180 B1100 B120 B130L B140 B160 B170 CD214A-B120 CD214
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
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CD214A-B120
B1100
DO-214AC
B190
B180
B120
B130L
B140
B160
B170
CD214A-B120
CD214
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63 marking, sma package diode
Abstract: marking code 63, sma package B180
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
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CD214A-B120
B1100
DO-214AC
63 marking, sma package diode
marking code 63, sma package
B180
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B180
Abstract: No abstract text available
Text: PL IA N T Features CO M • RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
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CD214A-B120
B1100
DO-214AC
RS-481-A
B180
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marking B1100
Abstract: No abstract text available
Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,
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MBR1100
marking B1100
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B1100
Abstract: MBR1100 MBR1100RL
Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR1100
r14525
MBR1100/D
B1100
MBR1100
MBR1100RL
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B1100
Abstract: MBR1100 MBR1100RL
Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR1100
r14525
MBR1100/D
B1100
MBR1100
MBR1100RL
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TA2022-100
Abstract: TA2022 AW600-06-40T-24-H RB-TA2022 amidon TRIPATH TECHNOLOGY 100W car power amplifier 17 pins tripath for car audio amplifiers TRIPATH 5k 100 16v
Text: Tr i path Technol ogy, I nc. - Technical Information RB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 6 CHANNEL TA2022 REFERENCE DESIGN Technical Information - Board Rev. 3.2 Revision 1.0 – November 2001 GENERAL DESCRIPTION The RB TA2022 Version 3.1 is a 6 channel, 100W per channel audio amplifier designed
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RB-TA2022
TA2022
TA2022
TA2022,
00W/Channel
200mA
TA2022-100
AW600-06-40T-24-H
RB-TA2022
amidon
TRIPATH TECHNOLOGY
100W car power amplifier 17 pins
tripath for car audio amplifiers
TRIPATH
5k 100 16v
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PZT Transducer
Abstract: ultrasonic generator schematic ultrasound transducer 10MHz ultrasound transducer circuit driver PZT Transducer ultrasonic Sensor OPB3 ultrasound piezoelectric design probe transducer ultrasonic piezoelectric transducer driver mems ultrasonic transducers ultrasound transducer Input output waveforms
Text: Supertex inc. MD1711DB2 MD1711 + TC6320 Demoboard Five-Level, Dual Channel ±100V 2.0A RTZ Pulser Features ► ► ► ► ► ► ► ► Five-level, dual-channel ultrasound transmitter MD1711 driving six TC6320 HV MOSFETs Design for RTZ waveforms outputs
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MD1711DB2
MD1711
TC6320
MD1711
/-100V
MD1711DB2
PZT Transducer
ultrasonic generator schematic
ultrasound transducer 10MHz
ultrasound transducer circuit driver
PZT Transducer ultrasonic
Sensor OPB3
ultrasound piezoelectric design probe transducer
ultrasonic piezoelectric transducer driver
mems ultrasonic transducers
ultrasound transducer Input output waveforms
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b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
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PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
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GRM31CR72A105KA01L
Abstract: GRM31CR71H225KA88L GRM31CR71H225K 7447789133 9V-to-40V 24V to 60V boost driver ic GRM31CR71H BC858B MSS6132 ZXMP6A13F
Text: L DESIGN IDEAS Triple Output LED Driver Works with Inputs to 60V and Delivers 3000:1 PWM Dimming by Hua Walker Bai Introduction The LT3492 is a 60V triple output LED driver for high input and/or high output voltage backlighting or direct lighting applications. A single 4mm x
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LT3492
LT3492.
B1100
MSS6132
ZXMP6A13F
150mA
GRM31CR72A105KA01L
GRM31CR71H225KA88L
GRM31CR71H225K
7447789133
9V-to-40V
24V to 60V boost driver ic
GRM31CR71H
BC858B
MSS6132
ZXMP6A13F
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RLY-RLY11-DPDT
Abstract: schematic diagram stereo amplifier 100W 2 channel 100w audio amplifier circuit diagram EB-TA2022 1N4148DICT-ND 2N7000FS-ND mini audio amplifier 2w TA2022 tyco 5V 1A DPDT RELAY TA2022-100
Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TA2022 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TA2022 EVALUATION BOARD Technical Information Revision 1.0 – March 2002 GENERAL DESCRIPTION The EB-TA2022 Version 4.0 is a stereo 100W per channel audio amplifier
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EB-TA2022
TA2022
EB-TA2022
TA2022
TA2022,
LM339
2N7000
LM358
RLY-RLY11-DPDT
schematic diagram stereo amplifier 100W
2 channel 100w audio amplifier circuit diagram
1N4148DICT-ND
2N7000FS-ND
mini audio amplifier 2w
tyco 5V 1A DPDT RELAY
TA2022-100
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