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Kyocera AVX Components 800B0R8BT500XT Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.8pF Tol .1pf Las Mkg
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	800B0R8BT500XT		111			1 $4.45 10 $3.42 100 $2.82 1000 $1.92 10000 $1.85	Buy Now
TTI	800B0R8BT500XT	Reel			500	1 - 10 - 100 - 1000 $1.9 10000 $1.8	Buy Now
Kyocera AVX Components 800B0R8BT500XTV Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 0.8pF Tol 0.1pF Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	800B0R8BT500XTV	Reel			500	1 - 10 - 100 - 1000 $1.9 10000 $1.8	Buy Now

ATC800B0R8BT500XT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SEMICONDUCTOR J598 Abstract: j598 ATC800B0R8BT500XT ATC800B J739 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739
j598 Abstract: No abstract text available Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 j598
Untitled Abstract: No abstract text available Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3
SEMICONDUCTOR J598 Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT
J280 Abstract: MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with	Original	PDF	MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3 J280 MRF8S19140H C1825C564J5RACTU J296 J589 MRF8S19140HS mrf8s19140 ATC800B AN1955 MCRH63V337M13X21-RH
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S19140H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S19140HR3 MRF8S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with	Original	PDF	MRF8S19140H MRF8S19140HR3 MRF8S19140HSR3 MRF8S19140HR3