ATC600S2R0BW Search Results

ATC600S2R0BW Price and Stock

Filter by Manufacturer


American Technical Ceramics Corp ATC600S2R0BW250T CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 5% +TOL, 5% -TOL, C0G, 30PPM/CEL TC, 0.000002UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S2R0BW250T		358			1 $2.4005 10 $2.4005 100 $1.2003 1000 $0.9602 10000 $0.9602	Buy Now
American Technical Ceramics Corp ATC600S2R0BW250XT CAPACITOR, CERAMIC, 250 V, C0G, 0.000002 UF, SURFACE MOUNT, 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600S2R0BW250XT		290			1 $1.55 10 $1.55 100 $0.775 1000 $0.62 10000 $0.62	Buy Now
Kyocera AVX Components 600S2R0BW250XT Silicon RF Capacitors / Thin Film 250volts 2pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S2R0BW250XT	Reel			500	1 - 10 - 100 - 1000 $0.494 10000 $0.42	Buy Now
Kyocera AVX Components 600S2R0BW250T 500/REEL ONLY Silicon RF Capacitors / Thin Film 250V 2pF Tol 0.1pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600S2R0BW250T 500/REEL ONLY	Reel			500	1 - 10 - 100 - 1000 $0.46 10000 $0.448	Buy Now

ATC600S2R0BW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor marking code 1325 Abstract: R04003 ims pcb filtronic Solid State Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State
transistor SMD P1f Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
transistor SMD P2F Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State
SMD Transistor p1f Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263 Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263
transistor SMD P1f Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100 Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f atc600s marking code 68W MARKING P1F SMD Transistor p1f MIL-HDBK-263 T491B105M035AS7015 Transistor p1f
ims pcb Abstract: No abstract text available Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb
ATC600S680JW250 Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
Untitled Abstract: No abstract text available Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100
CAPACITOR 33PF Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT	Original	PDF	FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
transistor SMD P1f Abstract: SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f MIL-HDBK-263 T491B105M035AS7015
transistor Bc 542 Abstract: transistor bc 567 Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power	Original	PDF	FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567
transistor SMD P1f Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
70GHz HEMT Amplifier Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized	Original	PDF	FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 880MHz) EB1000AS-AB 70GHz HEMT Amplifier smd code z16 transistor z14 smd T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
transistor SMD P1f Abstract: SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F