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amplifier MA-920 Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier	Original	PDF	MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 amplifier MA-920 ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier	Original	PDF	MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1
MRFE6S9046GN Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9046GN ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22