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    ATC100B820JT500XT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3

    MRF8P9040N

    Abstract: mrf8p ATC100B820JT RO4350B
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 0, 9/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040NBR1 728-its MRF8P9040N mrf8p ATC100B820JT RO4350B

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an


    Original     		PDF MMRF1316N MMRF1316NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1310H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, industrial including laser and plasma exciters , broadcast (analog and digital),


    Original     		PDF MMRF1310H MMRF1310HR5 MMRF1310HSR5 MMRF1310HR5 7/2014Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 1, 2/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1

    MRFE6VP6300

    Abstract: MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 0, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 MRFE6VP6300 MRFE6VP6300H mrfe6vp6300hr MRFE6VP6300H date MRFE6VP GA3095-ALC AN1955 1812SMS-R12JLC ATC100B820JT500XT 465M-01

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35

    MRFE6VP6300H

    Abstract: MRFE6VP6300HR3 MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300H MRFE6VP GA3095-ALC MRFE6VP6300H date AN1955 1812SMS-R12JLC ATC100B910JT500X J248 J980

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    MRF6V2300NB

    Abstract: MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N MRF6V2300NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 2, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 MRF6V2300NB MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N

    MRF8P9040N

    Abstract: MPZ2012S300AT000 MRF8P9040GNR1 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT MRF8P9040NR1 J583
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for


    Original     		PDF MRF8P9040N 728-9subsidiaries, MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 MRF8P9040N MPZ2012S300AT000 AN1955 293D106X9050E2TE3 MRF8P9040NB ATC100B820JT J583

    ATC200B103KT50XT

    Abstract: ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC200B103KT50XT ATC200B203KT50XT RF600LF-16 MRF6V2300NB MRF6V2300NBR1 ATC100B331J ds2054 ATC100B510GT500XT RF transformer turn ratio 12 RF1000LF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    MRF6V2300NB

    Abstract: AN3263 MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 3, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2300NR1 MRF6V2300NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		PDF MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 MRF6V2300NB AN3263 MRF6V2300NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6V2300N