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    Broadcom Limited AT-42000-GP4

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    AT4200 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT-42000 Agilent Technologies Up to 6 GHz Medium Power Up to 6 GHz Medium Power Original PDF
    AT-42000 Hewlett-Packard Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Scan PDF
    AT-42000-GP4 Agilent Technologies BJT, NPN, General Purpose Transistor, VCB0 20V, IC 0.08A Original PDF
    AT-42000-GP4 Agilent Technologies Up to 6 GHz Medium Power Up to 6 GHz Medium Power Original PDF
    AT-42000-GP4 Avago Technologies General purpose transistor Original PDF
    AT-42000-GP4 Hewlett-Packard Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Scan PDF
    AT42000-GP4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    AT4200 Datasheets Context Search

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    capacitor 100nf monoblock

    Abstract: lnb c-band RF gain stages mixer lnb AT4200 hemt lnb active tone control circuit ic lnb low noise tone control circuits circuit lnb capacitor 10nf monoblock
    Text: AnalogTek 武汉芯景科技有限公司 AT4200 ——Single LNB - Bias, control and power management solution Document No.： AT4200DS001V1.2E Issued Date： May, 2009 2009.05. CONTENTS SUMMARY .1


    Original     		PDF AT4200 AT4200DS001V1 AT4200JA16 AT4200JB16 330mm) capacitor 100nf monoblock lnb c-band RF gain stages mixer lnb AT4200 hemt lnb active tone control circuit ic lnb low noise tone control circuits circuit lnb capacitor 10nf monoblock

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E AT42000-GP4 AV02-1002EN 42000
    Text: AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized


    Original     		PDF AT-42000 AT-42000 5965-8909E AV02-1002EN 8909E AT-42000-GP4 S21E AT42000-GP4 42000

    8909E

    Abstract: AT-42000 AT-42000-GP4 S21E
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz


    Original     		PDF AT-42000 AT-42000 RN/50 5965-8909E 8909E AT-42000-GP4 S21E

    AT-42000

    Abstract: low noise amplifier ghz AT-42000-GP4 S21E 42000GP4
    Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz


    Original     		PDF AT-42000 AT-42000 RN/50 low noise amplifier ghz AT-42000-GP4 S21E 42000GP4

    HSCH-5337

    Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    AT-41486

    Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862

    B52 transistor

    Abstract: No abstract text available
    Text: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz


    OCR Scan     		PDF AT-42000 AT-42000 44475AM 0017b54 B52 transistor

    AT-60500

    Abstract: AT-01635 AT-21400 AT21400 AT-60586
    Text: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0


    OCR Scan     		PDF AT-41400 AT-60100 AT-60200 AT-60500 AT-41410 AT-41470 AT-60S10 AT-60S70 AT-41435 AT-41472 AT-01635 AT-21400 AT21400 AT-60586

    AT-42000

    Abstract: 42000
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications


    OCR Scan     		PDF AT-42000 AT-42000 nitride44 Rn/50 42000

    transistor 86 y 87

    Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
    Text: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications


    OCR Scan     		PDF AT-42000 AT-42000 KM/50 44475aii ooi7b53 0017b54 transistor 86 y 87 eic 57 210 17bs2 AT-42000-GP4 pj 68 S2a

    AT-42000

    Abstract: No abstract text available
    Text: AT-42000 UP t0 6 GHz Medium Power Silicon Bipolar Transistor Chip tVJ H E W L E T T P A C K A R D Chip Outline Features • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression: 15.0 dB typical Gi dB at 2.0 GHz


    OCR Scan     		PDF AT-42000

    Avantek amplifier 8 12 GHz

    Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
    Text: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-42000 Avantek amplifier 8 12 GHz Avantek power amplifier AT-42000-GP4 AVANTEK transistor