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    AT260 Search Results

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    AT260 Price and Stock

    Skyworks Solutions Inc AAT2605IWO-1-T1

    IC REG LINEAR 0.6V 14TDFN
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    DigiKey AAT2605IWO-1-T1 Reel 12,000 1,500
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    AAT2605IWO-1-T1 Cut Tape 243 1
    • 1 $1.13
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    AAT2605IWO-1-T1 Reel
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    Richardson RFPD AAT2605IWO-1-T1 249 1
    • 1 $0.41
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    Hirose Electric Co Ltd AT-2606

    RF ATTENUATOR 6DB SMA MODULE
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    Mouser Electronics AT-2606
    • 1 $322.67
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    Brady Worldwide Inc BCDAT-2-609-5

    LABEL, 0.9 IN H X 3 IN W
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    DigiKey BCDAT-2-609-5 Bulk 1
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    RS BCDAT-2-609-5 Package 1
    • 1 $324.99
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    Skyworks Solutions Inc AAT2601BIIH-T1

    IC PMIC TOTAL POWER 36TQFN
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    Skyworks Solutions Inc AAT2606IWO-1-T1

    IC REG LIN POS PROG 300MA 14DFN
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    Find more AT260 price and stock on Findchips.com

    AT260 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT-260 Tyco Electronics Digital Attenuator, 31 dB, 5-Bit DC . 2 GHz Original PDF
    AT-260 Tyco Electronics Digital Attenuator 31 dB, 5-Bit DC-2.0 GHz Original PDF
    AT2604 Raytheon RF Components Transistor Selection Guide Scan PDF
    AT2605 Raytheon RF Components Transistor Selection Guide Scan PDF
    AT-2606 Hirose Electric High power fixed attenuators (Mating waterproof); HRS No: 354-0255-8 00; Connector Type: Adapter; Impedance (ohm): 50; Frequency Range (GHz): 0 to 3; Power Capacity (W): 16; Attenuation (Max): 6; VSWR (Max): 1.3; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -10 to 65; General Description: With N-Plug/Jack connector,Mating waterproof Original PDF
    AT-260-PIN M/A-COM Digital, 5-Bit attenuator Original PDF
    AT-260PIN Tyco Electronics Digital Attenuator, 31 dB, 5-Bit DC . 2 GHz Original PDF
    AT-260RTR Tyco Electronics Digital Attenuator, 31 dB, 5-Bit DC . 2 GHz Original PDF
    AT-260TR Tyco Electronics Digital Attenuator, 31 dB, 5-Bit DC . 2 GHz Original PDF

    AT260 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT-260

    Abstract: AT-260TR M513 SSOP-20
    Text: AT-260 Digital Attenuator, 31 dB, 5-Bit DC - 2.0 GHz Functional Schematic Features • • • • • • Rev. V5 1-dB Attenuation Steps to 31 dB Ultra Low DC Power Consumption Low Intermodulation Products: IP3 = 50 dBm SSOP-20 Plastic Package Tape and Reel Packaging Available


    Original     		PDF AT-260 SSOP-20 AT-260 AT-260TR M513

    I.MX31

    Abstract: No abstract text available
    Text: Freescale Semiconductor Chip Errata Document Number: MCIMX31CE Rev. 5.7, 1/2013 MCIMX31 and MCIMX31L Chip Errata M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1.


    Original     		PDF MCIMX31CE MCIMX31 MCIMX31L MX31L) ARM1136JF-S, ARM11, I.MX31

    SANYO Amorton

    Abstract: 1.5V solar garden light solar cell Amorphous AM-5610 solar cells circuit diagram solar street light design AT7S64 solar traffic light design AM-1417 solar cell
    Text: Amorphous Silicon Solar Cells / Amorphous Photosensors 2007-11 The Concept Behind Solar Cell Power Generation Electric current Light Transparent electrode + + + + + + + + + + + + + + i + +- + + + + - n - - - - - Metal - - - - - - Electron electrode + Positive hole


    Original     		PDF EP120B SANYO Amorton 1.5V solar garden light solar cell Amorphous AM-5610 solar cells circuit diagram solar street light design AT7S64 solar traffic light design AM-1417 solar cell

    CR584

    Abstract: SYS68K ARM11 3L38W 2L38W IMX* Sony IPS1301BS hard reset arm11 TLSbo91748 MCIMX31L
    Text: Freescale Semiconductor Chip Errata MCIMX31 and MCIMX31L M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1. Table 1. Silicon Revision


    Original     		PDF MCIMX31 MCIMX31L MX31L) CR584 SYS68K ARM11 3L38W 2L38W IMX* Sony IPS1301BS hard reset arm11 TLSbo91748 MCIMX31L

    AT2601

    Abstract: 6v dc to dc mobile charger circuit Portable tv Circuit Diagram schematics AAT2601 LDO51 micro usb cell phone charger AAT2601178
    Text: PRODUCT DATASHEET AT2601178 Total Power Solution for Portable Applications General Description Features The AT2601 is a member of AnalogicTech’s Total Power Management ICTM TPMICTM product family. It contains a single-cell Lithium Ion/Polymer battery charger, a fully


    Original     		PDF AAT2601178 AAT2601 AT2601 6v dc to dc mobile charger circuit Portable tv Circuit Diagram schematics LDO51 micro usb cell phone charger AAT2601178

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    AT7S64

    Abstract: AM-1513 AM-5907 AM-1815 AM-1417 FL200Lux 7D08 AM-5610 AM-1437 AM-7A03
    Text: アモルファスSi太陽電池 アモルファス光センサ 2007-11 発電原理 太陽電池の発電原理は半導体の光起電力効果を利用したものです。 光 半導体に適当なエネルギーの強さを持った光が入射すると、光と半


    Original     		PDF 1cm21 1cm22 P120B P120A AT7S64 AM-1513 AM-5907 AM-1815 AM-1417 FL200Lux 7D08 AM-5610 AM-1437 AM-7A03

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5964-8A 2-11D1B) at260

    50920-1

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-16 TIM6472-16 50920-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5359-16 TIM5359-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz


    OCR Scan     		PDF TIM6472-7L 2-11D1B) at260 MW50870196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836B at260 S8836B 226mA 10GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-16 MW51020196 TIM7179-16

    Untitled

    Abstract: No abstract text available
    Text: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL


    OCR Scan     		PDF HLMP-0300/1 HLMP-0503/4 MV5X123 MV5X123, C1063C C1676 C1064C at260Â MIL-S-750, 74bbflSl

    S8837A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G 1dB = 7 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8837A 350COR S8837A

    c1066a

    Abstract: No abstract text available
    Text: LîX J CLEAR LENST-1V4 SOLID STATE LAMPS OPTOELECTRONICS ORANGE YELLOW HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED MV5152 MV5352 MV5452 MV5752 MV6152 MV6352 MV64520 MV64521 MV6752 DESCRIPTION PACKAGE DIMENSIONS MV5X52— LEAD CUT CATHODE LjONG MV6X52X— LEAD CUT ANODE LONG


    OCR Scan     		PDF MV5152 MV5352 MV5452 MV5752 MV6152 MV6352 MV64520 MV64521 MV6752 MV5X52-- c1066a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 7.0 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-8 Tr6472-8 TIM6472-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM4951-8 MW50570196 TIM4951-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-4 MW51040196 TIM7785-4

    S3V 09

    Abstract: S3V 03
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P idB = 24 dBm at f = 8 GHz • High gain - G idB = 8 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8835 JS8911-AS S3V 09 S3V 03

    5154A

    Abstract: 6754A 5354A MV5453
    Text: EO DIFFUSED T-13/ SOLID STATE LAMPS OPTOELECTRONICS ORANGE YELLO W HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED MV5153/4A MV5353/4A MV5453/4A MV5753/4A MV6153/4A MV6353/4A MV64530/1 MV6454J MV6753/4A DESCRIPTION PACKAGE DIMENSIONS These solid state indicators offer a variety of diffused lens


    OCR Scan     		PDF MV5153/4A MV5353/4A MV5453/4A MV5753/4A MV6153/4A MV6353/4A MV64530/1 MV6454J MV6753/4A at260 5154A 6754A 5354A MV5453

    Untitled

    Abstract: No abstract text available
    Text: E T-1 SOLID STATE LAMPS Q OPTOELECTRONICS YELLOW MV5374C STANDARD RED MV5074C HIGH EFFICIENCY GREEN MV5474C STANDARD RED MV5075C HIGH EFFICIENCY RED MV5774C DESCRIPTION These solid state indicators offer a variety of color selection. The High Efficiency Red, Green and Yellow


    OCR Scan     		PDF MV5374C MV5074C MV5474C MV5075C MV5774C MV5074C 020-inch 508mm) C1833 C652A

    Untitled

    Abstract: No abstract text available
    Text: T-1 SOLID STATE LAMPS E Q OPTOELECTRONICS YELLOW MV5374C STANDARD RED MV5074C HIGH EFFICIENCY GREEN MV5474C STANDARD RED MV5075C HIGH EFFICIENCY RED MV5774C DESCRIPTION These solid state indicators offer a variety of color selection. The High Efficiency Red, Green and Yellow


    OCR Scan     		PDF MV5374C MV5074C MV5474C MV5075C MV5774C MV5074C 020-inch 508mm) C1833 C652A

    7760R

    Abstract: LTS7760R LTS7751R LTS-7751R LTS7651HR LTS-7751 LTS3731E 7756r 7751R TE 7751
    Text: TAIWAN LITON ELECTRONIC m /s p ô t\a E4E D LTS- 7000 SERIES ÔÔ3SS 47 OQGOt.42 h 3730 \ 0.43" SIN GLE DIGIT NUMERIC DISPLAYS SPECIALIST FEATURES • 0.43 INCH 10.9mm D IG IT H EIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF S IX BRIG H T COLORS-RED/BRIGHT


    OCR Scan     		PDF LTS-7000/3730 7760R LTS7760R LTS7751R LTS-7751R LTS7651HR LTS-7751 LTS3731E 7756r 7751R TE 7751