AS006m1 datasheet
Abstract: AS006L1-00 AS006M1-00 AS006R1-00 High Isolation Reflective Switch
Text: Preliminary GaAs MMIC SPST FET Switch Chip DC–6 GHz AS006L1-00, AS006M1-00, AS006R1-00 1.170 1.044 • Excellent Intermodulation Products/Temperature Stability 0.772 0.100 ■ Multiple Use Options 0.533 Chip Outline 0.225 Features 1.143 1.038 ■ 100% On-Wafer DC Testing
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AS006L1-00,
AS006M1-00,
AS006R1-00
MIL-STD-883
AS006M1-00
3/99A
AS006m1 datasheet
AS006L1-00
AS006M1-00
AS006R1-00
High Isolation Reflective Switch
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AS006L1-01
Abstract: AS006L1-10
Text: GaAs IC SPST Switch Low Loss Reflective DC–6 GHz AS006L1-01, AS006L1-10 -01 Features • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) ■ Low Loss, Reflective 0.130 (3.30 mm) TYP. 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.
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AS006L1-01,
AS006L1-10
AS006L1-01
AS006L1-10
9/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPST Switch Low Loss Reflective DC-6 GHz EH A l p h a AS006L1 -01, AS006L1 -10 -01 Features • Low DC Power Consumption 0 .2 2 0 5 .5 9 m m 0 .2 1 0 ( 5 .3 3 m m ) ■ *- 0 .1 3 0 (3 .3 0 m m ) TYP. ■ Low Loss, Reflective 0 .0 6 3 (1 .6 0 m m ) TYP.
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AS006L1
AS006L1-01
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPST Switch Low Loss Reflective DC-6 GHz ESAlpha AS006L1-01, AS006L1-10 -01 F eat ur e s • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) ■0.130 (3.30 mm) TYP. ■ Low Loss, Reflective 0.063 (1.60 mm) TYP. 0.130 (3.30 mm) TYP. ■ 7 Lead Hermetic Package
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AS006L1-01,
AS006L1-10
AS006L1-01
AS006L1
3/99A
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GND23
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features • Multiple Use Options: Low Loss Reflective, High Isolation Non-Reflective, High Isolation Reflective ■ Broadband D C -6 G H z ■ 3 ns Rise/Fall Time ■ Low DC Power Consumption
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AS006L1-00,
AS006M1-00,
AS006R1-00
GND23
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Untitled
Abstract: No abstract text available
Text: GaAs MIUIIC SPST FET Switch Low Loss Reflective DC-6 GHz EEQAIph AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time
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AS006L1-01,
AS006L1-10,
AS004L1-08,
AS004L1-11
MIL-STD-883
AS004L1â
AS006L1-10
slighT002D8-31
AK006L1-01
AS004M2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Chip Outline F eat ur e s • Multiple Use Options o ■ Excellent Interm odulation Products/Temperature Stability o o o ■ 100% On-W afer DC Testing ■ 100% Visual Inspection of M IL-STD-883
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AS006L1-00,
AS006M1-00,
AS006R1-00
IL-STD-883
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPST Switch Low Loss Reflective DC-6 GHz ESAlpha AS006L1-01, AS006L1-10 Features -01 • Low DC Power Consumption 0.220 5.59 mm 0.210 (5.33 mm) «•-0.130 (3.30 mm) TYP. ■ Low Loss, Reflective 0.063 (1.60 mm) TYP. ■ 7 Lead Hermetic Package 0.130 (3.30 mm) TYP.
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AS006L1-01,
AS006L1-10
S006L1
3/99A
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gaas FET 6 GHZ Dw
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Low Loss Reflective DC-6 GHz 0 A lpha AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband D G -6 G H z ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time
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AS006L1-01,
AS006L1-10,
AS004L1-08,
AS004L1-11
AS004L1--
006L1-10
AS004L1-11
gaas FET 6 GHZ Dw
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Untitled
Abstract: No abstract text available
Text: Preliminary GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features Chip Outline • Multiple Use Options ■ Excellent Intermodulation Products/Temperature Stability ■ 100% O n-W afer DC Testing ■ 100% Visual Inspection of M IL -S T D -883
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PDF
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AS006L1-00,
AS006M1-00,
AS006R1-00
3/99A
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch Chip DC-6 GHz ESAlpha AS006L1-00, AS006M1-00, AS006R1-00 Features Chip Outline • Multiple Use Options o ■ Excellent Intermodulation Products/Temperature Stability o o o o o ■ 100% On-Wafer DC Testing ■ 100% Visual Inspection of MIL-STD-883
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AS006L1-00,
AS006M1-00,
AS006R1-00
MIL-STD-883
S006R1-00
3/99A
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Untitled
Abstract: No abstract text available
Text: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16
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AD004T2-00
AD004T2-11
AE002M2-29
AE002M4-05
AH002R2-11
AK002D2-11
AK002D4-11
AK002D4-31
AK002M4-00
AK002M4-31
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DSB3665-02
Abstract: No abstract text available
Text: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C
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DSB3665-01,
DSB3665-02,
DSB3667-01
DSB3665
DSB3667
ch8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
DSB3665-02
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies
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AP103-64
SOIC16
AP103-64
ce8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control
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AS103-59
AS103-59
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C
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AA038P1-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2â
AS006R2â
AS006R2-01)
AK006L1-01
AS004M2-11
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias
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AH002R2-12
maxi-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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SMS1526-10
Abstract: No abstract text available
Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
SMS1526-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages
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AS358-62
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability
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AS006M2-01,
AS006M2-10,
AS004M2-08,
AS004M2-11
AS006M2-10
MIL-STD-883
AK006L1-01
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features Broad Bandwidth Low DC Power Dissipation < 20 ^A Low Differential Phase Between Paths Meets M IL -S T D -88 3 Screening Requirements J2 Chip Size 30 x 39 x 8 Mils J3 Description The A D 004T2-00 is a GaAs 4 Port FET switch
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AD004T2-00,
AD004T2-11
004T2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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