BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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PDF
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AD818
AD818DIE
AD820
AD821
AD820DIE
O-204AA/TO-3
BD119
BC148A
APT1002RBNR
1000 volt npn
BD109
APT5025AN
APT904R2BN
BD107
APT1001R3AN
APT1004RBNR
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APT901RBN
Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN
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000027b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
APT1003R5BN
APT1004R2BN
APT901RBN
APT901R2BN
APT902RBN
apt4530bn
APT801R2BN
APT4030BN
APT902R4BN
APT*1002R4BN
APT3520BN
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Untitled
Abstract: No abstract text available
Text: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV APT1004RBN APT904RBN APT1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
904RBN
904R2BN
1004R2BN
1004RBN
180NORMALIZED)
APT1004R/904R/1004R2/904R2B
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1004rbn
Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
Text: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y APT1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D APT1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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PDF
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
904RBN
1004RBN
904R2BN
1004R2BN
5S71DT
0Q0E171
APT1004
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APT5085BN
Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN
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0GDD27b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
O-247
APT5085BN
APT501R1BN
APT801R2BN
APT5025BN
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1004R2BN
Abstract: APT904RBN Apt904r2bn 1004rbn
Text: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
1004RBN
904R2BN
1004R2BN
904RBN
/904R/1004R2/904R2BN
10OmS
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APT904RBN
Abstract: No abstract text available
Text: 3* O D o S W E R ADVANCED POW ER Te c h n o l o g y M O S APT1004RBN APT904RBN APT1004R2BN APT904R2BN H S 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00ß 4.00Q 4.20^ 4.20Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S
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APT1004RBN
APT904RBN
APT1004R2BN
APT904R2BN
904RBN
100mS
/1004R26N
APT904R/904R2BN
100-----------f
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