ed 77A DIODE
Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
Text: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
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O-264
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77A DIODE
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Abstract: No abstract text available
Text: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60JVFR
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APT50M60JVFR
Abstract: No abstract text available
Text: APT50M60JVFR 500V 63A POWER MOS V FREDFET 0.060Ω S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60JVFR
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VFR 500V 0.060Ω 77A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
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O-264
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Abstract: No abstract text available
Text: APT50M60L2VR 0.060Ω 500V 77A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
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O-264
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Untitled
Abstract: No abstract text available
Text: APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
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O-264
25utline
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APT50M60L2VR
Abstract: 77A DIODE
Text: APT50M60L2VR 500V 77A 0.060Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VR
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O-264
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Abstract: No abstract text available
Text: APT50M60JVR 500V 63A 0.060W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60JVR
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apt50m60jn
Abstract: N mos 100v 100A
Text: S S D D G G 27 2 T- SO APT50M60JN 500V 71A 0.06OΩ S "UL Recognized" File No. E145592 S ISOTOP POWER MOS IV ® SINGLE DIE ISOTOP® PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified.
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APT50M60JN
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Abstract: No abstract text available
Text: APT50M60JVR 0.060Ω 500V 63A POWER MOS V MOSFET D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60JVR
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apt50m60jvr
Abstract: APT60DF60 APT50M
Text: APT50M60JVR 500V 63A POWER MOS V MOSFET S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60JVR
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apt50m60jvr
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APT60DF60
Abstract: 77A DIODE APT50M60L2VFR diode 77a
Text: APT50M60L2VFR 500V 77A 0.060Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M60L2VFR
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O-264
APT60DF60
77A DIODE
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diode 77a
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catalog mosfet Transistor smd
Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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AN 780a
Abstract: APT45M60BFN APT50M60BFN y381 MC 78 M 05 CG 45M60
Text: ADVANCED POWER TECHNOLOGY W1 MTE ' D ^ • DESTTCH 4bb ■ AVP : A dvanced W jM ROWER T -3 A -IS 'co ^ ta 000D5Bb ZéÊk T e c h n o l o g y _ APT50M60BFN 500V 78.0A 0.060 W APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT50M60BFN
APT45M60BFN
MIL-STD-750
AN 780a
y381
MC 78 M 05 CG
45M60
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage
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APT50M60JN
E145592
50M60JN
OT-227
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER L 3E D TECHNOLOGY • 0257^ QQOimQ b2s M A VP A d v a n ced P o w er Te c h n o l o g y APT50M60JNF 500V 71A 0.060Í2 ISOTOP' S tt" U L Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS
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APT50M60JNF
E145592
50M60JNF
OT-227
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LS 14500
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y " APT50M60JNF 500V 71A 0.060Í2 ISOTOP1 ,S M "U L Recognized" File No. E145592 S POWER MOS IVe SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.
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APT50M60JNF
E145592
50M60JNF
APT50M60JNF
LS 14500
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diode ED 68
Abstract: APT50M60
Text: AD VA NC ED PO WER T E C H N O L O G Y MIE D • G E 5 7 1 D EI GÜÜÜSflb Mbb * A V P A dvanc ed POWER T-3°l-l5 Te c h n o lo g y . APT50M60BFN 500V 78.0A 0.060 9 APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M03FETS
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GE571DE
APT50M60BFN
APT45M60BFN
382-8n00
APT50M60/45M60BFN
MIL-STD-750
diode ED 68
APT50M60
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diode sg 71A
Abstract: 50M60JN SM 71A diode
Text: o D O S A d va n ced P o w er Te c h n o l o g y 8 APT50M60JN 500V 71A 0.060Q 9 Û "U L Recognized" File No. E145592 S) ISOTOP POWER MOS IV( SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS *D *DM’ ’lM
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APT50M60JN
E145592
50M60JN
OT-227
diode sg 71A
SM 71A diode
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Untitled
Abstract: No abstract text available
Text: ADVANCED PO W ER Tec h n o lo g y* OD APT50M60JN ôs 500V 71A 0.060Q "UL Recognized" File No. E145592 S ISOTOP* POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter APT 50M60JN
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APT50M60JN
E145592
50M60JN
OT-227
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APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
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APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
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APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Text: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED
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APT4016BN
APT4018BN
APT4016BNR
APT4018BNR
APT4020BN
APT4025BN
APT4020BNR
APT4025BNR
APT10M13JNR
APT10M15JNR
APT802R4KN
APT10050JN
lf 3560
FREDFET
APT5010JN
APT8018
APT4065BN
690 mosfet
R6KN
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apt20m25jnr
Abstract: apt20m25
Text: W UAAdvanced PT rn ow er tiu n t nirr Table of Contents • • • • • • • • ISOTOP® Products Product Selector Guide Features/Benefits Product Datasheets US and Canadian Representative Sales Offices US and Canadian Distributor Sales Offices International Representative and Distributor Sales Offices
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APT10M13JNR
APT20M25JNR
APT30M45JNR
APT40M75JN
APT40M42JN
APT5010JN
APT50M60JN
APT6015JN
APT60M90JN
APT8030JNFR
apt20m25
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