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    APT5020 Price and Stock

    Microchip Technology Inc APT5020BVFRG

    MOSFET N-CH 500V 26A TO247
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    DigiKey APT5020BVFRG Tube 695 1
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    Avnet Americas APT5020BVFRG Tube 32 Weeks 50
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    Mouser Electronics APT5020BVFRG 1,256
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    Verical APT5020BVFRG 200 5
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    Microchip Technology Inc APT5020BVFRG Tube 32 Weeks
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    NAC APT5020BVFRG Tube 36
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    Richardson RFPD APT5020BVFRG 100 1
    • 1 $9.44
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    Master Electronics APT5020BVFRG 200
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    Microchip Technology Inc APT5020BVRG

    MOSFET N-CH 500V 26A TO247
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    DigiKey APT5020BVRG Tube 60 1
    • 1 $10
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    Avnet Americas APT5020BVRG Tube 26 Weeks 60
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    Mouser Electronics APT5020BVRG 430
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    Verical APT5020BVRG 200 1
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    APT5020BVRG 200 10
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    • 100 $10.309
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    Arrow Electronics APT5020BVRG 200 26 Weeks 1
    • 1 $9.919
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    Newark APT5020BVRG Bulk 60
    • 1 $10
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    Microchip Technology Inc APT5020BVRG Tube 26 Weeks
    • 1 $10
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    Onlinecomponents.com APT5020BVRG 200
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    TME APT5020BVRG 1
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    NAC APT5020BVRG Tube 38
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    Richardson RFPD APT5020BVRG 1
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    Microchip Technology Inc APT5020BN

    MOSFET N-CH 500V 28A TO247AD
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    Microchip Technology Inc APT5020BNFR

    MOSFET N-CH 500V 28A TO247AD
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    Microchip Technology Inc APT5020SVRG

    MOSFET N-CH 500V 26A D3PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT5020SVRG Tube 30
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    • 100 $7.705
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    Find more APT5020 price and stock on Findchips.com

    APT5020 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5020 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT5020BLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5020BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 28A TO247AD Original PDF
    APT5020BNF Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT5020BNR Advanced Power Technology Power MOS IV Scan PDF
    APT5020BV Advanced Power Technology TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,26A I(D),TO-247AD Original PDF
    APT5020BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5020BVFRG Microchip Technology MOSFET N-CH 500V 26A TO247 Original PDF
    APT5020BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020BVRG Microchip Technology MOSFET N-CH 500V 26A TO247 Original PDF
    APT5020DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT5020HJN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFETS Scan PDF
    APT5020SLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5020SN Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFETS Scan PDF
    APT5020SVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5020SVFRG Microchip Technology MOSFET N-CH 500V 26A D3PAK Original PDF
    APT5020SVFRG/TR Microchip Technology MOSFET N-CH 500V 26A D3PAK Original PDF
    APT5020SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT5020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5020BLC

    Abstract: No abstract text available
    Text: APT5020BLC APT5020SLC 500V 26A 0.200Ω POWER MOS VITM BLC D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and


    Original     		PDF APT5020BLC APT5020SLC O-247 O-247

    TO-247 Package

    Abstract: No abstract text available
    Text: APT5020BLC 500V 26A 0.200 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT5020BLC O-247 O-247 MIL-STD-750 TO-247 Package

    Untitled

    Abstract: No abstract text available
    Text: APT5020BFLC 500V POWER MOS VITM 26A 0.200W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5020BFLC O-247 O-247 APT5020BFLC

    Untitled

    Abstract: No abstract text available
    Text: APT5020SVR 500V 26A 0.200Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5020SVR

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT5020HJN E145592 S020HJN OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT5020SVFR A dvanced po w er Te c h n o l o g y POWER MOS V‘ 500V 26A 0.200Í2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020SVFR APT5020SVFR

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W .\A APT5020BVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020BVFR O-247

    5020BN

    Abstract: 5022BN APT5020BN 5020B APT5022BN APTS022BN APT 5020BN
    Text: A dvanced P o w er Tec h n o lo g y O D O s POWER MOS IV' APT5020BN 500V 28.0A 0.20U APT5022BN 500V 27.0A 0.220 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 5020BN APT 5022BN


    OCR Scan     		PDF APT5020BN APT5022BN 5020BN 5022BN APT5020/5022BN O-247AD 5020B APTS022BN APT 5020BN

    APT502

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT5020BVFR 500V POWER MOS V 26A 0.200& l! F R E D F E T Power MOS Vi sa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5020BVFR O-247 APT5020BVFR O-247AD APT502

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y O D Ô APT5020BNR APT5022BNR S 500V 28.0A 0.20Q 500V 27.0A 0.220 POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol V DSS V GS GSM ^ @ Tc A P T 50 22B N R U N IT


    OCR Scan     		PDF APT5020BNR APT5022BNR T5020B T5022B O-247AD

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A APT5020SVFR pow er Te c h n o l o g y “ soov POWER MOS V 26a 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020SVFR

    APT5020

    Abstract: APT5020JN APT5020JN APT
    Text: A D V A N C E D PO WE R TECHNOLOGY b3E ]> • OESVTO'i Ü G 0 1 1 7 b ßflD * A V P A d van ced P o w er Te c h n o l o g y Q D APT5020JN APT5022JN ISOTOP* 500V 500V 28.0A 0.20ÍJ 27.0A 0.22.Q 5 Û "UL Recognized" File No. E145592 S POWER MOS IV' SINGLE DIE ISOTOP® PACKAGE


    OCR Scan     		PDF APT5020JN APT5022JN E145592 5020JN 5022JN OT-227 APT5020 APT5020JN APT

    APT5020BNR

    Abstract: APT5022BNR
    Text: O D O S A d va n ced P o w er Te c h n o l o g y * APT5020BNR APT5022BNR POWER MOS IV‘ 500V 28.0A 0.2011 500V 27.0A 0.22£i AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'd ' dm VGS V GSM PD


    OCR Scan     		PDF APT5020BNR APT5022BNR O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5020BNFR APT5022BNFR APT502Q/5022BNFR 0Q01473

    DJ26

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT5020SVFR 500V POWER MOS V 26A 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5020SVFR DJ26

    APT5020BNR

    Abstract: No abstract text available
    Text: A dvanced ro w er Te c h n o l o g y APT5020BNR 500V 28.0A 0.2012 APT5022BNR 500V 27.0A 0.2212 O D O S lib 'W tR m o s m AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5020BNR APT5022BNR APT5020/5022BNR O-247AD

    2091J

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D APT5020BNR 500V 28.0A 0.200 APT5022BNR 500V 27.0A 0.22Q O S POWER MOS IVe AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5020BNR APT5022BNR APT5020BNR APT5022BNR Jun022BNR O-247AD DDD1H77 2091J

    Untitled

    Abstract: No abstract text available
    Text: • R A dvan c ed r M po w er APT5020SVR Te c h n o lo g y soov 26a 0.200Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5020SVR

    APT5022BNFR

    Abstract: APT5020BNFR 5022BNF
    Text: ADVANCED POWER Te c h n o l o g y APT5020BNFR APT5022BNFR POWER MOS IV® 500V 500V 28A 27A 0.20Q 0.22Í2 AVALANCHE RATED FREDFET N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5020BNFR APT5022BNFR O-247AD 5022BNF

    APT5022BNFR

    Abstract: APT5020BNFR APT5020 sv 4380 DDD1470 5022BN 5022B
    Text: A d van ced P o w er T e c h n o l o g yr APT5020BNFR APT5022BNFR POWER MOS IV' 500V 500V 28A 0.20Í2 27A 0.22Q AVALANCHE RATED FREDFET N-C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS 'd *DM V GS V GSM Parameter TJ’"I STG


    OCR Scan     		PDF APT5020BNFR APT5022BNFR APT5020BNFR APT5022BNFR O-247AD APT5020 sv 4380 DDD1470 5022BN 5022B

    APT5020HJN

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y 9 OD G1 O J oJ APT5020HJN Q 'j 500V 28.0A 0.200 5 Û " I I L Recognized" File No. E145592 S ISOTOP1 POWER MOS IV< HALF-BRIDGE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A XIM U M R A T IN G S


    OCR Scan     		PDF APT5020HJN E145592 5020HJN OT-227 APT5020HJN

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y O D APT5020BN 500V 28.0A 0.200 O S APT5022BN 500V 27.0A 0.22£i G F vvE r m o s í ® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S All Ratings: Tc = 25°C unless otherwise specified. APT S020BN


    OCR Scan     		PDF APT5020BN APT5022BN S020BN 5022BN APT5020/5022BN 100nS 100mS -247AD

    APT802R4KN

    Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
    Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN


    OCR Scan     		PDF APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5040BN APT802R4KN APT6018LNR APT6060BN mosfet selector guide APT-6018 APT10M25bnfr k 3530 MOSFET 1r3b

    Untitled

    Abstract: No abstract text available
    Text: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®


    OCR Scan     		PDF APT5020BVR O-247