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    APT10M11 Price and Stock

    Microchip Technology Inc APT10M11LVRG

    MOSFET N-CH 100V 100A TO264
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    Microchip Technology Inc APT10M11LVRG Tube 26 Weeks
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    Microchip Technology Inc APT10M11JVR

    MOSFET N-CH 100V 144A ISOTOP
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    Microchip Technology Inc APT10M11JVFR

    MOSFET N-CH 100V 144A ISOTOP
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    DigiKey APT10M11JVFR Tube 10
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    Mouser Electronics APT10M11JVFR 12
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    Microchip Technology Inc APT10M11JVFR Tube 32 Weeks
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    Microchip Technology Inc APT10M11JVRU3

    MOSFET N-CH 100V 142A SOT227
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    Microchip Technology Inc APT10M11JVRU3 25 Weeks
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    Microchip Technology Inc APT10M11JVRU2

    MOSFET N-CH 100V 142A SOT227
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    DigiKey APT10M11JVRU2 Bulk 32
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    APT10M11 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10M11B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT10M11B2VFRG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M11B2VFRG Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 100A T-MAX Original PDF
    APT10M11B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M11JVFR Microsemi Power MOS V FREDFET Original PDF
    APT10M11JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10M11JVR Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 144A ISOTOP Original PDF
    APT10M11JVRU2 Advanced Power Technology ISOTOP Boost chopper MOSFET Power Module Original PDF
    APT10M11JVRU2 Microsemi ISOTOP Boost chopper MOSFET Power Module Original PDF
    APT10M11JVRU2 Microsemi FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 Original PDF
    APT10M11JVRU3 Advanced Power Technology ISOTOP Buck chopper MOSFET Power Module Original PDF
    APT10M11JVRU3 Microsemi ISOTOP Buck chopper MOSFET Power Module Original PDF
    APT10M11JVRU3 Microsemi FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 142A SOT227 Original PDF
    APT10M11LVFR Advanced Power Technology High Voltage N-Channel enhancement mode power MOSFET Original PDF
    APT10M11LVFRG Microsemi Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.011; BVDSS (V): 100; Original PDF
    APT10M11LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF

    APT10M11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original
    APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2 PDF

    APT10M11LVR

    Abstract: No abstract text available
    Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR 0.011Ω 100V 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11JVR OT-227 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original
    APT10M11JVRU2 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 PDF

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original
    APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink PDF

    APT10M11B2VFR

    Abstract: TF6646 APT10M11LVFR
    Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11B2VFR APT10M11LVFR O-264 O-264 APT10M11 O-247 APT10M11B2VFR TF6646 APT10M11LVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original
    APT10M11JVRU2 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon


    Original
    APT10M11JVRU3 OT-227) PDF

    APT10M11JVFR

    Abstract: DSA0011335 241U
    Text: APT10M11JVFR 100V Ω 0.011Ω 144A POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11JVFR OT-227 APT10M11JVFR DSA0011335 241U PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original
    APT10M11JVRU3 OT-227) PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT10M11B2VR O-247 APT10M1B2VR PDF

    APT10M11JVRU3

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode


    Original
    APT10M11JVRU3 OT-227) APT10M11JVRU3 MOSFET Module 100v 1000A PDF

    APT10M11JVRU2

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original
    APT10M11JVRU2 OT-227) APT10M11JVRU2 MOSFET Module 100v 1000A PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er T e c h n o lo g y 9 APT10M11JVR 100V 144A 0.01m POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT10M11JVR OT-227 APT10M11 OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov i44a 0 .01 m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    APT10M11JVR OT-227 45Nut E145592 PDF

    I44A

    Abstract: No abstract text available
    Text: • R A dvanced r M po w er Tec h n o lo g y APT10M11J VR ioov i44a 0.011 q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT10M11J OT-227 APT10M11JVR E145592 I44A PDF

    Untitled

    Abstract: No abstract text available
    Text: A P T 10M 11 LV R A dvanced W 7Æ P o w e r Te c h n o l o g y ioov 100a 0.01m POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan
    O-264 APT10M1LVR PDF

    Untitled

    Abstract: No abstract text available
    Text: • R A dvanced W 'æ APT pow er Te c h n o l o g y ' io o v 10 M 11 JV R i 44 a 0.011 q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    OT-227 APT10M11 E145592 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan
    APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr PDF