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    APT10025JVFR Price and Stock

    Microchip Technology Inc APT10025JVFR

    MOSFET N-CH 1000V 34A ISOTOP
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    DigiKey APT10025JVFR Tube 10
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    Avnet Americas APT10025JVFR Tube 32 Weeks 10
    • 1 $89.8758
    • 10 $89.8758
    • 100 $74.685
    • 1000 $74.72707
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    Mouser Electronics APT10025JVFR
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    Newark APT10025JVFR Bulk 10
    • 1 $91.71
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    Future Electronics APT10025JVFR 10
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    Microchip Technology Inc APT10025JVFR Tube 32 Weeks
    • 1 $91.71
    • 10 $91.71
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    • 1000 $72.66
    • 10000 $70.27
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    Onlinecomponents.com APT10025JVFR
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    TME APT10025JVFR 1
    • 1 $132.58
    • 10 $105.43
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    NAC APT10025JVFR Tube 4
    • 1 $85.07
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    • 1000 $72.62
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    Richardson RFPD APT10025JVFR 10
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    Master Electronics APT10025JVFR
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    APT10025JVFR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT10025JVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10025JVFR Advanced Power Technology POWER MOS V 1000V 34A 0.250 Ohm Original PDF
    APT10025JVFR Microsemi Power MOS V FREDFET Original PDF

    APT10025JVFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10025JVFR

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V FREDFET S S Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT10025JVFR OT-227 APT10025JVFR

    Untitled

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592

    u 5601

    Abstract: APT10025JVFR
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR

    APT10025JVFR

    Abstract: No abstract text available
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 APT10025JVFR

    u 5601

    Abstract: APT10025JVFR DSA003649
    Text: APT10025JVFR 34A 0.250Ω Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR DSA003649

    u 5601

    Abstract: APT10025JVFR
    Text: APT10025JVFR 34A 0.250Ω 1000V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT10025JVFR OT-227 E145592 u 5601 APT10025JVFR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    ZVT uc3875

    Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
    Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


    Original     		PDF APT9804 SEM-900, UC3875 U-136A. 135/D. ZVT uc3875 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 ZVT full bridge pwm controller uc3875 Bill Andreycak

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    inverter welder schematic

    Abstract: arc welder schematic full bridge arc welder arc welder inverter inverter welder 4 schematic inverter welder schematic 1 phase SWITCHING WELDING SCHEMATIC BY MOSFET ZVT full bridge pwm controller smps welder schematic pwm INVERTER welder
    Text: APT9803 APPLICATION NOTE By: Hubert Aigner Kenneth Dierberger Denis Grafham Improving the Full-bridge Phase-shift ZVT Converter for Failure-free Operation Under Extreme Conditions in Welding and Similar Applications Presented at IAS 98 St. Louis Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


    Original     		PDF APT9803 ppIII/87-93, SEM-900, inverter welder schematic arc welder schematic full bridge arc welder arc welder inverter inverter welder 4 schematic inverter welder schematic 1 phase SWITCHING WELDING SCHEMATIC BY MOSFET ZVT full bridge pwm controller smps welder schematic pwm INVERTER welder

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED r M po w er Tec h n o lo g y APT10025JVFR 1000v 34a 0.250Q POWER MOS V‘ FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10025JVFR 1000v OT-227 APT10025JVFR Con65) E145592

    SOT-227 Package

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y ' APT10025JVFR 1000V POWER MOS V FREDFET 34A 0.250ÍÍ 5 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ,u


    OCR Scan     		PDF APT10025JVFR OT-227 MIL-STD-750 10OA/ns, SOT-227 Package