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Catalog Datasheet	MFG & Type	PDF	Document Tags
AO3423 Abstract: HTGB Text: AOS Semiconductor Product Reliability Report AO3423/AO3423L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Apr 19, 2006 1 This AOS product reliability report summarizes the qualification result for AO3423. Accelerated	Original	PDF	AO3423/AO3423L, AO3423. AO3423 Mil-Std-105D HTGB
Untitled Abstract: No abstract text available Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3423 AO3423/L AO3423 AO3423L -AO3423L O-236 OT-23)
AO3423 Abstract: No abstract text available Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3423 AO3423/L AO3423 AO3423L -AO3423L O-236 OT-23)
AO3423 Abstract: No abstract text available Text: AO3423 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3423 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM	Original	PDF	AO3423 AO3423 AO3423L O-236 OT-23)