jfet cascode
Abstract: vertical JFET SiS 671 12 VOLTS CIRCUIT USING MOSFET an7260.2 mosfet equivalent DEPLETION MOSFET transistor jfet Harris Semiconductor jfet cascode mosfet switching
Text: Harris Semiconductor No. AN7260.2 Harris Power MOSFETs September 1993 Power MOSFET Switching Waveforms: A New Insight Author: Harold R. Ronan, Jr. and C. Frank Wheatley, Jr. The examination of power MOSFET voltage and current waveforms during switching transitions reveals that the
|
Original
|
PDF
|
AN7260
jfet cascode
vertical JFET
SiS 671
12 VOLTS CIRCUIT USING MOSFET
an7260.2
mosfet equivalent
DEPLETION MOSFET
transistor jfet
Harris Semiconductor jfet
cascode mosfet switching
|
RF1K49093
Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI
|
Original
|
PDF
|
RF1K49093
RF1K49093
1e-30
61e-4
09e-6)
10e-3
99e-6)
82e-3
47e-7)
AN7254
AN9321
AN9322
MS-012AA
RF1K4909396
|
d8p05
Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Text: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
|
Original
|
PDF
|
RFD8P05,
RFD8P05SM,
RFP8P05
TA09832.
d8p05
RFP8P05
RFD8P05
RFD8P05SM
RFD8P05SM9A
TB334
23842
|
AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
|
Original
|
PDF
|
HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
|
75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
|
Original
|
PDF
|
HUFA75631P3,
HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
75631P
AN9321
HUFA75631P3
HUFA75631S3ST
TB334
|
ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
|
Original
|
PDF
|
ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
|
AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
|
Original
|
PDF
|
RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
|
7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
|
Original
|
PDF
|
RFD7N10LE,
RFD7N10LESM
7n10l
7n10le
RFD7N10LESM
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
|
76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
|
Original
|
PDF
|
HUF76639P3,
HUF76639S3S
O-220AB
HUF76639P3
76639p
HUF76639P3
HUF76639S3S
HUF76639S3ST
TB334
92e2
|
Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
|
Original
|
PDF
|
RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
RELAY 4088
Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using
|
Original
|
PDF
|
RFD14N06L,
RFD14N06LSM,
RFP14N06L
RELAY 4088
TB334
RFD14N06L
RFD14N06LSM
RFD14N06LSM9A
RFP14N06L
|
AN9321
Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3
|
Original
|
PDF
|
HUFA76413D3,
HUFA76413D3S
O-251AA
O-252AA
HUFA76413D3
AN9321
HUFA76413D3
HUFA76413D3S
HUFA76413D3ST
TB334
|
FD3055
Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve
|
Original
|
PDF
|
RFD3055,
RFD3055SM,
RFP3055
TA49082.
175oC
TB334
FD3055
Fp3055
IS433
4078 relay
RFP3055
TB334
AN7254
RFD3055
RFD3055SM
RFD3055SM9A
|
RFP70N03
Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model
|
Original
|
PDF
|
RFP70N03,
RF1S70N03,
RF1S70N03SM
O-220AB
175oC
O-262AA
RF1S70N03SM
05e-4
RFP70N03
RF1S70N03SM9A
RF1S70N03
|
|
|
AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
|
Original
|
PDF
|
RF1K49154
AN7254
AN9321
AN9322
MS-012AA
RF1K49154
RF1K4915496
TB334
|
HUF76445P3
Abstract: HUF76445S3S HUF76445S3ST TB334
Text: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer
|
Original
|
PDF
|
HUF76445P3,
HUF76445S3S
O-220AB
HUF76445P3
HUF76445P3
HUF76445S3S
HUF76445S3ST
TB334
|
75307
Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
PDF
|
HUF75307P3,
HUF75307D3,
HUF75307D3S
75307
75307d
transistor 75307D
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TA75307
TB334
|
75337
Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
Text: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
|
Original
|
PDF
|
HUFA75337G3,
HUFA75337P3,
HUFA75337S3S
75337
75337P
HUFA75337G3
HUFA75337P3
HUFA75337S3S
HUFA75337S3ST
TB334
|
75307
Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
|
Original
|
PDF
|
HUFA75307P3,
HUFA75307D3,
HUFA75307D3S
75307
75307d
transistor 75307D
HUFA75307D3
HUFA75307D3S
HUFA75307D3ST
HUFA75307P3
TA75307
TB334
UFA7
|
76423P
Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Text: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S
|
Original
|
PDF
|
HUFA76423P3,
HUFA76423S3S
O-220AB
O-263AB
HUFA76423P3
76423P
76423S
HUFA76423P3
HUFA76423S3S
HUFA76423S3ST
TB334
63E13
|
59E-1
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
|
Original
|
PDF
|
HUF75309T3ST
59E-1
AN7254
AN7260
AN9321
AN9322
HUF75309T3ST
TB334
TB337
|
76633s
Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S
|
Original
|
PDF
|
HUF76633P3,
HUF76633S3S
O-220AB
O-263AB
HUF76633P3
76633s
76633p
AN9321
AN9322
HUF76633P3
HUF76633S3S
HUF76633S3ST
TB334
mosfet 407
|
76629D
Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw
|
Original
|
PDF
|
HUF76629D3,
HUF76629D3S
O-251AA
HUF76629D3
76629D
AN9321
HUF76629D3
HUF76629D3S
HUF76629D3ST
TB334
4692
|
AN9321
Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
|
Original
|
PDF
|
HUFA75831SK8
MS-012AA
HUFA75831Slopment.
AN9321
HUFA75831SK8
HUFA75831SK8T
MS-012AA
TB370
|