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    AM158 Search Results

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    AM158 Price and Stock

    Anatech Electronics Inc AM1587B1172

    1587.5 MHZ CERAMIC BAND PASS FIL
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    DigiKey AM1587B1172 Ammo Pack 10
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    Anatech Electronics Inc AM1582B1580

    1582.5 MHZ CERAMIC BAND PASS FIL
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    DigiKey AM1582B1580 Ammo Pack 10
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    • 10 $32.025
    • 100 $32.025
    • 1000 $32.025
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    SPC Multicomp AM158

    Bridge Rectifier, 1Ph 1.5A 800V Though Hole; No. Of Phases:Single Phase; Repetitive Peak Reverse Voltage:800V; Average Forward Current:1.5A; Bridge Rectifier Case Style:-; No. Of Pins:4Pins; Forward Voltage Max:1V; Product Range:- Rohs Compliant: Yes |Multicomp AM158
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    Newark AM158 Bulk 5
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    AeroAntenna Technology Inc AT575-6W-SMAM-158-05-12-HD

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    Bristol Electronics AT575-6W-SMAM-158-05-12-HD 1
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    AM158 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AM158 Comchip Technology 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. Original PDF
    AM158 Unknown BRIDGE RECTIFIER 1.5A 800V Original PDF
    AM158 PanJit Semiconductors 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) Original PDF
    AM158 Transys Electronics 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE Original PDF
    AM158S Comchip Technology 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. Original PDF

    AM158 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM1580CE N & P-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 740 @ VGS = 10V 80 810 @ VGS = 4.5V 3300 @ VGS = -10V -80 3400 @ VGS = -4.5V


    Original     		AM1580CE SC70-6 AM1580CE PDF

    Untitled

    Abstract: No abstract text available
    Text: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max STL9N60M2 ID 0.86 Ω 650 V 4.8 A • Extremely low gate charge 1


    Original     		STL9N60M2 DocID025655 PDF

    10N60M2

    Abstract: No abstract text available
    Text: STF10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STF10N60M2 650 V 0.6 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation


    Original     		STF10N60M2 O-220FP O-220FP DocID024712 10N60M2 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability


    Original     		STW69N65M5-4 O247-4 O247-4 AM10177v1 DocID024925 PDF

    STD10N60M2

    Abstract: STP10N60
    Text: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2


    Original     		STD10N60M2, STP10N60M2, STU10N60M2 O-220 STD10N60M2 STP10N60M2 O-220 DocID024710 STD10N60M2 STP10N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2.9 W • RDS(on) * Qg industry benchmark


    Original     		DocID023668 PDF

    stp7n60

    Abstract: No abstract text available
    Text: STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 1 Order codes 3 VDS @ TJmax RDS on max ID 650 V 0.95 Ω 5A STD7N60M2 DPAK STP7N60M2


    Original     		STD7N60M2, STP7N60M2, STU7N60M2 O-220 STD7N60M2 STP7N60M2 O-220 AM15572v1 DocID024622 stp7n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: STF18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max STF18N60M2 650 V 0.28 Ω ID 13 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation


    Original     		STF18N60M2 O-220FP O-220FP DocID024729 PDF

    E111753

    Abstract: AM100 AM101 AM1010 AM102 AM104 AM106 AM108 AM154
    Text: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes Recongnized File #E111753 AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board


    Original     		AM100/150 AM1010/1510 E111753 MIL-STD-202, AM150 AM100 E111753 AM101 AM1010 AM102 AM104 AM106 AM108 AM154 PDF

    STP18N60M2

    Abstract: No abstract text available
    Text: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK


    Original     		STB18N60M2, STP18N60M2, STW18N60M2 O-220 O-247 STB18N60M2 STP18N60M2 O-220 O-247 STP18N60M2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: STF9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - production data Features 1 2 Order code VDS @ TJmax RDS on max ID STF9N60M2 650 V 0.78 Ω 5.5 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation


    Original     		STF9N60M2 O-220FP O-220FP DocID024728 PDF

    Untitled

    Abstract: No abstract text available
    Text: STL17N3LLH6 N-channel 30 V, 0.0038 Ω typ., 17 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS on max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb.


    Original     		STL17N3LLH6 DocID15535 PDF

    7N60M2

    Abstract: No abstract text available
    Text: STF7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STF7N60M2 650 V 0.95 Ω 5A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation


    Original     		STF7N60M2 O-220FP O-220FP DocID024894 7N60M2 PDF

    AM152

    Abstract: AM106 AM100 AM101 AM1010 AM102 AM104 AM108 AM150
    Text: AM100/150 THRU AM1010/1510 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes AM FEATURES l Ratings to 1000V PRV l Surge overload rating— 30/50 amperes peak l Ideal for printed circuit board l Reliable construction utilizing molded plastic


    Original     		AM100/150 AM1010/1510 MIL-STD-202, temperatur06 AM108 AM1010 AM150 AM151 AM152 AM154 AM106 AM100 AM101 AM102 AM104 PDF

    E111753

    Abstract: AM150 AM151 AM1510 AM152 AM154 AM156 AM158
    Text: 3.DATASHEET AM150~AM1510 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes Unit: inch mm AM .370(9.4) .358(9.1) .217(5.5) .197(5.0) Recongnized File # E111753 FEATURES • Ratings to 1000V PRV • Surge overload rating: 50 Amperes peak


    Original     		AM150 AM1510 E111753 MIL-STD-202, E111753 AM151 AM1510 AM152 AM154 AM156 AM158 PDF

    Untitled

    Abstract: No abstract text available
    Text: STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes STF9N60M2 STFI9N60M2 1 2 RDS on max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge


    Original     		STF9N60M2, STFI9N60M2 O-220FP STF9N60M2 O-220FP O-281) DocID024728 PDF

    AM1510

    Abstract: AM152 AM154 AM156 AM158 E111753 AM150 AM151
    Text: DATA SHEET AM150~AM1510 1.5 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE 50 to 600 Volts CURRENT 1.5 Amperes AM Unit: inch mm Recongnized File # E111753 .217(5.5) .197(5.0) FEATURES • Ratings to 1000V PRV .370(9.4) .339(8.6) • Surge overload rating: 50 Amperes peak


    Original     		AM150 AM1510 E111753 MIL-STD-202, AM1510 AM152 AM154 AM156 AM158 E111753 AM151 PDF

    TSP160C

    Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
    Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04


    Original     		50Amp 80Amp 100Amp 375x360x390/390x240x420 375x360x390 O-252 TSP160C ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C PDF

    AM100

    Abstract: AM101 AM102 AM104 AM106 AM150 AM151 AM152 AM154
    Text: Silicon Miniature Single-Phase Bridge COMCHIP www.comchiptech.com AM 100/150 Thru AM1010/1510 Voltage: 50 - 1000 Volts Current: 1.0 - 1.5 Amp AM Features Ratings to 1000V PRV Surge overloadrating - 30/50 amperes peak Ideal for printed circuit board Reliable construction utilizing molded plastic


    Original     		AM1010/1510 MIL-STD-202, otherwi00 MDS0306001A AM100 AM101 AM102 AM104 AM106 AM150 AM151 AM152 AM154 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bridge Rectifiers 1.5 A Single Phase Features : • • • • • Ratings to 1,000 V PRV Surge overload rating - 30 / 50 amperes peak Ideal for printed circuit board Reliable construction utilizing moulded plastic Mounting position : Any Mechanical Data:


    Original     		MIL-STD-202, element14 PDF

    Untitled

    Abstract: No abstract text available
    Text: STL18N3LLH7 N-channel 30 V, 0.0034 Ω typ., 18 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - target specification Features Order code VDS RDS on max ID STL18N3LLH7 30 V 0.0045 Ω 18 A • Very low on-resistance


    Original     		STL18N3LLH7 AM15810v1 DocID025088 PDF

    C8117

    Abstract: sf 123 c am AMS-117 am103 AMG-134 AM148
    Text: AMPLIFIER SELECTION GUIDE MODEL NO. FREQUENCY RANGE MHz GAIN (dB) TYP NOISE FIGURE (dB) TYP AM<S09 AM>)894 tO ÁWM07 0-5^0 0 5-100 0& 100 1-100 10 16 30 10 4.6 3.8 4,5 1.4 AM-162 AMC-162 10-100 10-100 12.5 12.5 1.3 1.3 3RD ORDER INTERCEPT (dBm) TYP . •


    OCR Scan     		AM-162 AMC-162 AMS-162 AM-113 AM-132 AMC-132 AM-194 AMG-134 AM-136 AMC-136 C8117 sf 123 c am AMS-117 am103 AMG-134 AM148 PDF

    AL1510

    Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
    Text: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006


    OCR Scan     		IN4001 1N4007 IN4001S IN4007S IN5391 IN5399 PS200 PS2010 IN5400 IN5408 AL1510 FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN5405 diode AG206 Diode IN5398 PDF