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    Not Specified VC8125A-LZ100-16.384-T

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    Bristol Electronics VC8125A-LZ100-16.384-T 4,262
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    Raltron Electronics Corporation VC7450A-LZ-100-35.328MHZ

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    Bristol Electronics VC7450A-LZ-100-35.328MHZ 1,228
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    Raltron Electronics Corporation VC7225A-LZ-100-30.000MHZ

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    Bristol Electronics VC7225A-LZ-100-30.000MHZ 250
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    Raltron Electronics Corporation VC7225A-LZ-100-25.000MHZ

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    Bristol Electronics VC7225A-LZ-100-25.000MHZ 163
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    Raltron Electronics Corporation VC7225A-LZ-100-16.384

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    Bristol Electronics VC7225A-LZ-100-16.384 143
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    ALZ10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ALZ10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ALZ10 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ALZ10 Unknown Vintage Transistor Datasheets Scan PDF
    ALZ10 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    ALZ10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    71C4400A

    Abstract: No abstract text available
    Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­


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    PDF GQ03455 71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 71C4400A

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF

    GM71C4

    Abstract: T88L
    Text: @ LG Semicon. Co. LTD. Description Features The GM71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


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    PDF GM71C4800A/AL GM71C4 T88L

    Untitled

    Abstract: No abstract text available
    Text: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per­


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    PDF GM71C4100A/AL 300-mil 20-pin 400-mil 05A7S7

    2N3443

    Abstract: 2SB383 2SB382 2G271 2N1056 2SA42 2. germanium 2SB201 25a41 ALZ10 T-022
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF 2N3443 2G110 TI440 75M5A 200M5 2N2238 MM2552t MM2554t 400M5A XT200A 2SB383 2SB382 2G271 2N1056 2SA42 2. germanium 2SB201 25a41 ALZ10 T-022

    2sc113

    Abstract: EM 18 OC318 2N1056 2G271 TF75 2G110 2G319 2G524 2SB219
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2sc113 EM 18 OC318 2N1056 2G271 TF75 2G110 2G319 2G524 2SB219

    s417t

    Abstract: ALT70 ALZ-70 88882 ALZ10 CG1700
    Text: GM71C4170A/AL GM71CS4170A/AL LG Semicon Co.,Ltd. 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C4170 AML is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C4170A/AL GM71CS4170A/AL GM71C4170 GM71CS4170A/AL s417t ALT70 ALZ-70 88882 ALZ10 CG1700

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    GM7IC4256A

    Abstract: 71c4256a GM7IC4256A/AL-70 GoldStar 4256a GM7IC 71C4256 GoldStar battery itec C4256 101 gst
    Text: GOLDSTAR TECHNOLOGY I N C / 47E D 4Q2Ô757 G0G3415 GST 7 GoldStar G M 7 1 C 4 2 5 6 A /A L 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144x4 Bit. GM71C4256A/AL has realized higher density, higher per­


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    PDF GGG3415 GM71C4256A/AL GM71C4256A/AL GM71C-4256A/AL T-46-23-17 GM7IC4256A 71c4256a GM7IC4256A/AL-70 GoldStar 4256a GM7IC 71C4256 GoldStar battery itec C4256 101 gst

    A5 GNC

    Abstract: ALZ10
    Text: @ LG Semicon. Co. LTD Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4270A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


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    PDF GM71C4270A/AL 402A757 00DS3fl7 A5 GNC ALZ10

    gm71c4260aj

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD._ Description Features The GM71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.


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    PDF GM71C4260A/AL DD05327 4DE6757 0DQ532fl gm71c4260aj

    gm71c4400az

    Abstract: No abstract text available
    Text: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­


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    PDF GM71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 300-mil gm71c4400az

    gm71c4260a

    Abstract: 71C4260
    Text: GM71C4260A/AL GM71CS4260A/AL LG Semicon Co.,Ltd. 262,144 W ORDS x 16 BIT CMOS DYNAMIC RAM Description Features The G M 71C4260A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4260A/AI. has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C4260A/AL GM71CS4260A/AL 71C4260A/AL GM71C4260A/AI. GM71CS4260A/AL gm71c4260a 71C4260

    GM71C4170

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GM71C4170A/AL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C4170A/AL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.


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    PDF GM71C4170A/AL 000520b GM71C4170

    Untitled

    Abstract: No abstract text available
    Text: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by


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    PDF GM71C4170A/AL GM71CS4170A/AL X16BIT GM71C4170A/AL 144x16

    auo 014

    Abstract: No abstract text available
    Text: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,


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    PDF GM71C4260A/AL GM71CS4260A/AL X16BIT GM71C4260A/AL 71C4260A/AL 71CS4260A/AL auo 014

    GM7IC4256A/AL-80

    Abstract: No abstract text available
    Text: GM71C4256A/AL GoldStar 262,144 WORDSx 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4256A/AL is the new generation dy­ • 262,1 4 4 x 4 Bit Organization namic RAM organized 262,144 x 4 Bit. GM71C- • Fast Page Mode Capability


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    PDF GM71C4256A/AL GM71C4256A/AL GM71C- 256A/AL GM71CtRC GM71C4256A/AL-60 GM71C4256A/AL-70 GM71C4256A/AL-80 GM7IC4256A/AL-80

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    GM7IC4100

    Abstract: No abstract text available
    Text: GM71C4100A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 4,194,304 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ nam ic RAM organized 4,1 9 4 ,3 0 4 x 1 Bit. GM71C4100A/AL has realized higher density, higher performance and various functions by uti­


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    PDF GM71C4100A/AL GM71C4100A/AL 300-mil 20-pin 400-mil 300-mil GM7IC4100

    GM7IC4256A/AL-70

    Abstract: GM7IC4256A/AL-80
    Text: GM71C4256A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4256A/AL is the new generation dy­ namic RAM organized 262,144 x 4 Bit. GM71C4256AJAL has realized higher density, higher per­ formance and various functions by utilizing ad­


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    PDF GM71C4256A/AL GM71C4256A/AL GM71C4256AJAL GM7IC4256A/AL-70 GM7IC4256A/AL-80

    Untitled

    Abstract: No abstract text available
    Text: W GM71C4270A/AL GM71CS4270A/AL GoldStar ! 262,144 WORDS x 16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4270A/AL is the new generation dynamic RAM organized 262,144x 16 Bit. GM71C4270A/AL has realized higher density, higher performance and various functions by


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    PDF GM71C4270A/AL GM71CS4270A/AL 16BIT GM71C4270A/AL

    tl 0741

    Abstract: No abstract text available
    Text: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing


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    PDF GM71C4800A/AL GM71CS4800A/AL 71C4800A/AL GM71CS4800A/AL tl 0741

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor