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    Infineon Technologies AG S29GL128S90FAI010

    IC FLASH 128MBIT PARALLEL 64FBGA
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    DigiKey S29GL128S90FAI010 Tray 1,772 1
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    Mouser Electronics S29GL128S90FAI010
    • 1 $5.66
    • 10 $4.67
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    Infineon Technologies AG S29GL128P11FAI010

    IC FLASH 128MBIT PARALLEL 64FBGA
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    DigiKey S29GL128P11FAI010 Tray 330 1
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    Infineon Technologies AG S29GL01GS10FAI010

    IC FLASH 1GBIT PARALLEL 64FBGA
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    DigiKey S29GL01GS10FAI010 Tray 130 1
    • 1 $14.24
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    ebm-papst S4D500-AI01-01

    AC AXIAL FAN
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    DigiKey S4D500-AI01-01 Bulk 10
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    Avnet Americas S4D500-AI01-01 Bulk 10
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    Mouser Electronics S4D500-AI01-01
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    Newark S4D500-AI01-01 Bulk 10
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    Master Electronics S4D500-AI01-01
    • 1 $503.73
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    Sager S4D500-AI01-01 1
    • 1 $525.96
    • 10 $483.31
    • 100 $432.31
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    Infineon Technologies AG S29GL128N10FAI010

    IC FLASH 128MBIT PARALLEL 64FBGA
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    AI010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m628032

    Abstract: SOJ28 1370E
    Text: M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 12, 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ and DIP, 300 mil PACKAGES 28 28 1 1 PSDIP28 PS DESCRIPTION


    Original
    PDF M628032 PSDIP28 M628032 SOJ28 1370E

    25x16

    Abstract: ST24C16 ST24W16 ST25C16 ST25W16
    Text: ST24C16, ST25C16 ST24W16, ST25W16 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions


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    PDF ST24C16, ST25C16 ST24W16, ST25W16 ST24x16 ST25x16 ST24W16 ST24C16 ST24/25C16 25x16 ST24C16 ST25C16 ST25W16

    M48T35Y

    Abstract: M48T35 SOH28
    Text: M48T35 M48T35Y 5.0V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


    Original
    PDF M48T35 M48T35Y 28-pin M48T35: M48T35Y: PCDIP28 M48T35Y M48T35 SOH28

    M27C160

    Abstract: Q15A
    Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V


    Original
    PDF M27C160 50sec. FDIP42W M27C160 Q15A

    DS1642

    Abstract: M48T02 M48T12
    Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS


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    PDF M48T02 M48T12 24-pin PCDIP24 M48T02: M48T12: DS1642 M48T02 M48T12

    micromodule

    Abstract: ST1305 DS0501 DS-0501
    Text: ST1305 High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control BRIEF DATA • Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: Figure 1. Delivery Forms – 16 bits of Circuit Identification – 48 bits of Card Identification


    Original
    PDF ST1305 DS0502 ST1305 DS0501 micromodule DS0501 DS-0501

    AN923

    Abstract: M48T35 M48T35Y SOH28
    Text: M48T35 M48T35Y 256 Kbit 32Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS ■ FREQUENCY TEST OUTPUT for REAL TIME


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    PDF M48T35 M48T35Y PCDIP28 SOH28 M48T35: M48T35Y: AN923 M48T35 M48T35Y SOH28

    M48T58

    Abstract: M48T58Y SOH28
    Text: M48T58 M48T58Y 64 Kbit 8Kb x8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS FREQUENCY TEST OUTPUT for REAL TIME


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    PDF M48T58 M48T58Y M48T58: M48T58Y: 28-LEAD M48T58 M48T58Y SOH28

    DS1220

    Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
    Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 DS1220 M48Z02 M48Z12 24-Pin Plastic DIP

    Untitled

    Abstract: No abstract text available
    Text: ST24/25C08, ST24C08R ST24/25W08 SERIAL 8K 1K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x08 versions – 2.5V to 5.5V for ST25x08 versions – 1.8V to 5.5V for ST24C08R version only


    Original
    PDF ST24/25C08, ST24C08R ST24/25W08 ST24x08 ST25x08 ST24C08R ST24W08 ST25W08 150mil

    DS1225

    Abstract: M48Z08 M48Z18 M4Z28-BR00SH M4Z32-BR00SH SOH28 ram DS1225
    Text: M48Z08 M48Z08Y, M48Z18 5V, 64 Kbit 8Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM and POWER-FAIL CONTROL CIRCUIT ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT


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    PDF M48Z08 M48Z08Y, M48Z18 28-pin M48Z08: M48Z18/Z08Y: PCDIP28 DS1225 M48Z08 M48Z18 M4Z28-BR00SH M4Z32-BR00SH SOH28 ram DS1225

    M48T35

    Abstract: STMicroelectronics
    Text: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original
    PDF M48T35 M48T35Y M48T35: M48T35Y: STMicroelectronics

    M40Z300

    Abstract: M48Z128 M48Z128V M48Z128Y SOH28
    Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES


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    PDF M48Z128 M48Z128Y, M48Z128V* M48Z128: M48Z128Y: M48Z128V: M40Z300 M48Z128 M48Z128V M48Z128Y SOH28

    M27C160

    Abstract: PDIP42 PLCC44 Q15A SDIP42
    Text: M27C160 16 Mbit 2Mb x 8 or 1Mb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 50ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE 42 42 ■ 16 Mbit MASK ROM REPLACEMENT 1 ■ LOW POWER CONSUMPTION FDIP42W (F) 1 PDIP42 (B)


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    PDF M27C160 FDIP42W PDIP42 SDIP42 M27C160 PDIP42 PLCC44 Q15A SDIP42

    Untitled

    Abstract: No abstract text available
    Text: XZ7 SG S-TH O M SO N * IM. HD»IHI miS !0 §i M628032 VERY FAST CMOS 32K x 8 SRAM WITH OUTPUT ENABLE • 32K x 8 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 12,15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ and DIP, 300 mil


    OCR Scan
    PDF M628032 PSDIP28 SOJ28 M628032 in8032 SOJ28 0DbTE23

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^7#«, HO glS ilLIOT®iD(gi ST24C08, ST25C08 ST24W08, ST25W08 SERIAL ACCESS 8K (1K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION > SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions


    OCR Scan
    PDF ST24C08, ST25C08 ST24W08, ST25W08 ST24x08 ST25x08 ST24W08 ST24/25C08, ST24/25W08

    Untitled

    Abstract: No abstract text available
    Text: M48Z512 M48Z512Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4 Mb 512K x 8 ZEROPOWER SRAM NOT FOR NEW DESIGN INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the


    OCR Scan
    PDF M48Z512 M48Z512Y LDIP32 M48Z512Y M48Z512/512Y M48Z512A/512AY) M48Z512, PMLDIP32-

    Untitled

    Abstract: No abstract text available
    Text: / 3 T SCS-THOMSON *7 / ST24C01, ST25C01 ST24W01, ST25W01 SERIAL ACCESS 1K 128 x 8 EEPROM 00 • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24 versions - 2.5V to 5.5V for ST25 versions ■ HARDWARE WRrTE CONTROL VERSIONS:


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    PDF ST24C01, ST25C01 ST24W01, ST25W01 ST24W01 ST24/25C01, ST24/25W01

    Untitled

    Abstract: No abstract text available
    Text: £ = 7 ^ 7 # » S G S -T H O M S O N M 4 8 T 0 2 M M 4 8 T 1 2 M illL IM t M Q Ig i CMOS 2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REALTIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY DATE,


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    PDF M48T02 M48T12 M48T02, M48T12 PCDIP24 PCDIP24

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ M48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: M48Z02/12

    Untitled

    Abstract: No abstract text available
    Text: M48Z2M1 M48Z2M1Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16 Mb 2Mb x 8 ZEROPOWER SRAM PR ELIM IN A R Y DATA • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the


    OCR Scan
    PDF M48Z2M1 M48Z2M1Y 48Z2M M48Z2M1Y LDIP36 M48Z2M1/2M1Y 204ce, M48Z2M1, PMLDIP36-

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON M48T02 A 7 # . [M»[g[LI gmMD(gS_ M48T12 16Kb (2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,


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    PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 1N5817 MBRS120T3 M48T02,

    Untitled

    Abstract: No abstract text available
    Text: M41T11 512 bit 64b x8 Serial Access TIM EKEEPER SRAM • 2.0V to 5.5V SUPPLY VOLTAGE ■ COUNTERS for SECONDS, MINUTES, HOURS, DAY, DATE, MONTH, YEARS and CENTURY ■ YEAR 2000 COMPLIANT ■ SOFTWARE CLOCK CALIBRATION ■ AUTOMATIC SWITCH-OVER and DESELECT


    OCR Scan
    PDF M41T11 150mil M41T11

    Untitled

    Abstract: No abstract text available
    Text: ST24C08, ST25C08 ST24W08, ST25W08 8 Kbit Serial l2C Bus EEPROM with User-Defined Block Write Protection • 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions


    OCR Scan
    PDF ST24C08, ST25C08 ST24W08, ST25W08 ST24x08 ST25x08 ST24W08 150mil ST24/25C08,