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STMicroelectronics M48Z512Y-85PL1 NON-VOLATILE SRAM MODULE, 512KX8, 85NS, CMOS, PDIP32
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M48Z512Y Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M48Z512Y-120PL1		STMicroelectronics	NVRAM (Battery Based)		Scan	PDF
M48Z512Y-120PL1		STMicroelectronics	CMOS 512K x 8 ZEROPOWER SRAM		Scan	PDF
M48Z512Y-85PL1		STMicroelectronics	CMOS 512K x 8 ZEROPOWER SRAM		Scan	PDF

M48Z512Y Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
M48Z512 Abstract: No abstract text available Text: M48Z512 M48Z512Y CMOS 512K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 512K x 8 SRAMs	Original	PDF	M48Z512 M48Z512Y M48Z512: M48Z512Y: PMLDIP32 M48Z512/512Y M48Z512
M48Z512 Abstract: No abstract text available Text: M48Z512 M48Z512Y CMOS 512K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with	Original	PDF	M48Z512 M48Z512Y M48Z512: M48Z512Y: PMLDIP32 M48Z512/512Y M48Z512Y AI01218
M48Z32Y-100PC1 Abstract: m48z32y M48T08-150PC1 PCDIP28 M48Z32-85PC1 m48t12-150 m48t08-150 MK41T56N00 M48T02-120PC1 105v Text: MEMORIES and SMARTCARD PRODUCTS STATIC RAMS ZEROPOWER SRAM Organis. Speed ns VCC Range Feature Temperature Range (°C) Package M48Z02-120PC1 x8 120 5V + 10/-5% 10 Year Battery Life 0 to 70 PCDIP24 M48Z02-150PC1 x8 150 5V + 10/-5% 10 Year Battery Life 0 to 70	Original	PDF	M48Z02-120PC1 M48Z02-150PC1 M48Z12-150PC1 M48Z02-150PC6 M48Z12-150PC6 M48Z02-200PC1 M48Z12-200PC1 M48Z02-200PC6 M48Z12-200PC6 M48Z58-70PC1 M48Z32Y-100PC1 m48z32y M48T08-150PC1 PCDIP28 M48Z32-85PC1 m48t12-150 m48t08-150 MK41T56N00 M48T02-120PC1 105v
AN6022 Abstract: SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM Text: A Comparison between nvSRAMs and BBSRAMs AN6022 Application Note Abstract This application note describes the comparison of features, capabilities, and benefits between Cypress nvSRAM and BBSRAMs. Introduction What is nvSRAM? With lead-free initiatives being implemented globally,	Original	PDF	AN6022 AN6022 SRAM 6T micrologic DS1225Y ds1225ab circuit diagram DS1225AB DS1250W M48Z512AY sonos BBSRAM
Untitled Abstract: No abstract text available Text: M48Z512 M48Z512Y SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4 Mb 512K x 8 ZEROPOWER SRAM NOT FOR NEW DESIGN INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the	OCR Scan	PDF	M48Z512 M48Z512Y LDIP32 M48Z512Y M48Z512/512Y M48Z512A/512AY) M48Z512, PMLDIP32-
A6527 Abstract: M48Z512 Text: G 7 . SG S-TH O M SO N « [M a i© © « ! M48Z512 M48Z512Y CMOS 512K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 5 YEARS of DATA RETENTION in the	OCR Scan	PDF	M48Z512 M48Z512Y M48Z512Y: M48Z512/512Y 00b12Dl M48Z512, PMLDIP32 PMLDIP32 A6527
Untitled Abstract: No abstract text available Text: fZ J 7 # ^ M48Z512 M48Z512Y S C S -T H O M S O N RiflQMSEILKOTORQDÊi CMOS 512K X 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWER FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UN LIMITED WRITE CYCLES ■ 5 YEAR MINIMUM DATA RETENTION IN THE	OCR Scan	PDF	M48Z512 M48Z512Y M48Z512 M48Z512/512Y M48Z512, M48K512Y PMLDIP32
Untitled Abstract: No abstract text available Text: 5 7 . M48Z512 M48Z512Y S G S -T H O M S O N i y CMOS 512K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 5 YEARS of DATA RETENTION in the ABSENCE of POWER	OCR Scan	PDF	M48Z512 M48Z512Y M48Z512: 48Z512Y M48Z512/512Y M48Z512, M48Z512Y 120ns PMLDIP32
Untitled Abstract: No abstract text available Text: / = # S C S -TH O M SO N * 7 # . [lfl g (2 [l(Li(gra®iD(gS M48Z512 M48Z512Y CMOS 512K x 8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 5 YEARS of DATA RETENTION in the	OCR Scan	PDF	M48Z512 M48Z512Y M48Z512 48Z512Y PMLDIP32 M48Z512/512Y M48Z512, PMLDIP32
Untitled Abstract: No abstract text available Text: M48Z512 M48Z512Y SGS-THOMSON 4 Mb 512K x 8 ZEROPOWER SRAM NOT FOR NEW DESIGN INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 5 YEARS of DATA RETENTION in the ABSENCE of POWER AUTOMATIC POWER-FAIL CHIP DESELECT	OCR Scan	PDF	M48Z512 M48Z512Y 48Z512 LDIP32 48Z512Y M48Z512/512Ywill M48Z512A/512AY) 70nsce.
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
si977 Abstract: 48Z512Y Text: /=7 SGS-TtfOMSON ^ 7 # M 48Z512 M 48Z512Y M ^ © iL [i g ? ^ (Q iO (g S CMOS 512K X 8 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CO N TRO L CIRCUIT AND BATTERY ■ C O N V E N T IO N A L SRAM O P E R A T IO N ; UN LIMITED W RITE CYC LES	OCR Scan	PDF	48Z512 48Z512Y 48Z512Y M48Z512, M48K512Y M48Z512 LDIP32 si977
M48Z512 Abstract: No abstract text available Text: M 48Z512 M 48Z512Y w , S G S -T H O M S O N k7 #» RitlDÊlMIlilLIKËinSMQtÊS 4 Mb 512K x 8 ZER O PO W ER SRAM N O T F O R N E W D E S IG N INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES	OCR Scan	PDF	M48Z512 M48Z512Y M48Z512: M48Z512Y M48Z512/512Ywill M48Z512A/512AY) M48Z512/512Y M48Z512, PMLDIP32
dallas ds80c320 high speed micro guide Abstract: DS1640 Text: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .	OCR Scan	PDF

stopwatch using 8051 microcontroller Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288 Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:	OCR Scan	PDF	150-mil S2105 S2105 stopwatch using 8051 microcontroller 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
MK45H14 Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .	OCR Scan	PDF	M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
MK48T87B24 Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W	OCR Scan	PDF	M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR