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    AHR TRANSISTOR Search Results

    AHR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AHR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G

    ahr transistor

    Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197K L2SD1781K 236AB) L2SB1197KQLT1 L2SB1197KQLT1G 3000/Tape L2SB1197KRLT1 L2SB1197KRLT1G ahr transistor L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq

    ahr transistor

    Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr transistor L2SB1197KRLT1G L2SB1197K sot23 ahq

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQLT1G L2SD1781K AEC-Q101 236AB) 3000/Tape 10000/Tape L2SB1197KQLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.


    Original     		PDF L2SB1197KQLT1G S-L2SB1197KQ L2SD1781K AEC-Q101 236AB) 3000/Tape L2SB1197KQLT1G S-L2SB1197KQLT1G L2SB1197KQLT3G S-L2SB1197KQLT3G

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 5 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SD2908 OT-89 100mA 100MHz

    2SD2908

    Abstract: 2SD2908 EQUIVALENT 2sd290 ahr transistor SOT89 transistor marking 4A
    Text: 2SD2908 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 5 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD2908 OT-89 100mA 100MHz 2SD2908 2SD2908 EQUIVALENT 2sd290 ahr transistor SOT89 transistor marking 4A

    ahr TRANSISTOR smd

    Abstract: SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking
    Text: Transistors SMD Type Low Frequency Transistor 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SB1197K OT-23 -50mA -100mA 100MHz ahr TRANSISTOR smd SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking

    2SB1197K

    Abstract: AHp MARKING
    Text: 2SB1197K SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		PDF 2SB1197K OT-23-3L 2SB1197K -100mA -50mA 100MHz AHp MARKING

    Untitled

    Abstract: No abstract text available
    Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23


    Original     		PDF L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197KRLT1 L2SB1197KQLT1 L2SB1197K OT-23 3000/Tape

    Untitled

    Abstract: No abstract text available
    Text: SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD2098 FEATURES Power dissipation : 0.5 W Tamb=25? PCM Collector current : 5 A ICM Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range T J , T stg: -55? to +150? 1. BASE


    Original     		PDF OT-89 OT-89 2SD2098 100mA 100MHz 2SD2098

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current


    Original     		PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    marking 4a sot-89

    Abstract: 2SB1386 2SD2098 sot89 MARKING 4A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR 1 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted


    Original     		PDF OT-89 OT-89 2SD2098 2SB1386 100mA 100MHz 2SD2098 marking 4a sot-89 2SB1386 sot89 MARKING 4A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR MAXIMUM RATINGS Ta=25℃ unless otherwise noted


    Original     		PDF OT-89-3L OT-89-3L 2SD2098 2SB1386 100mA 100MHz

    2SB1197

    Abstract: 2SD1781 ahr sot23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz 2SB1197 2SD1781 ahr sot23

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


    Original     		PDF 2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23

    sot23 ahq

    Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
    Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz sot23 ahq sot23 ahr AHp sot23 ahr transistor ahr sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 2SB1197 OT-23 /-50mA) 2SD1781. -100mA -50mA -50mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SB1197K OT-23 -50mA -100mA 100MHz

    2SB1197

    Abstract: ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Low VCE sat .VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA). IC =-0.8A. Complements the 2SD1781.


    Original     		PDF 2SB1197 /-50mA) 2SD1781. OT-23 -50uA, -500mA, -50mA -100mA -50mA, 100MHz 2SB1197 ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23

    2SB1197

    Abstract: No abstract text available
    Text: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating


    Original     		PDF 2SB1197 OT-23 OT-23 -500mA, -50mA -100mA -20mA, 100MHz 19-Apr-2011 2SB1197

    2SB1197

    Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
    Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781


    Original     		PDF 2SB1197 OT-23 /-50mA) 2SD1781 2SB1197-P 2SB1197-Q 2SB1197-R -500mA, -50mA 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180