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    2SB1386 Search Results

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    2SB1386 Price and Stock

    ROHM Semiconductor 2SB1386T100Q

    TRANS PNP 20V 5A MPT3
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    DigiKey 2SB1386T100Q Digi-Reel 2,021 1
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    ROHM Semiconductor 2SB1386T100R

    TRANS PNP 20V 5A MPT3
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    DigiKey 2SB1386T100R Digi-Reel 795 1
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    2SB1386T100R Reel 1,000
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    Mouser Electronics 2SB1386T100R 353
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    Newark 2SB1386T100R Cut Tape 217 1
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    Bristol Electronics 2SB1386T100R 5
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    Quest Components 2SB1386T100R 3,684
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    ComSIT USA 2SB1386T100R 3,000
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    Win Source Electronics 2SB1386T100R 336,000
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    Micro Commercial Components 2SB1386-R-TP

    Interface
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    DigiKey 2SB1386-R-TP Bulk 1,000
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    Micro Commercial Components 2SB1386-Q-TP

    Interface
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    Micro Commercial Components 2SB1386-P-TP

    TRANS PNP 20V 5A SOT89
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    2SB1386 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1386 Kexin Low Frequency Transistor Original PDF
    2SB1386 ROHM Low Frequency Transistor (-20V,-5A) Original PDF
    2SB1386 ROHM Low frequency transistor Original PDF
    2SB1386 TY Semiconductor Low Frequency Transistor - SOT-89 Original PDF
    2SB1386 Unisonic Technologies LOW FREQUENCY PNP TRANSISTOR Original PDF
    2SB1386 Weitron Epitaxial Planar Transistor PNP Silicon Original PDF
    2SB1386 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1386 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1386 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1386 ROHM Transistor Selection Guide Scan PDF
    2SB1386L-X-AB3-F-R Unisonic Technologies LOW FREQUENCY PNP TRANSISTOR Original PDF
    2SB1386-P-AB3-B-R Unisonic Technologies LOW FREQUENCY PNP TRANSISTOR Original PDF
    2SB1386-P-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SB1386Q ROHM Low Frequency Transistor (20V, 5A) Original PDF
    2SB1386R ROHM Low Frequency Transistors Original PDF
    2SB1386T100P ROHM Low Frequency Transistor (-20 V, -5 A) Original PDF
    2SB1386T100Q ROHM Low Frequency Transistor (-20 V, -5 A) Original PDF
    2SB1386T100R ROHM Low Frequency Transistor (-20 V, -5 A) Original PDF
    2SB1386-X-AB3-F-R Unisonic Technologies LOW FREQUENCY PNP TRANSISTOR Original PDF

    2SB1386 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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    PDF 2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)


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    PDF 2SB1386 2SB1386 OT-89 QW-R208-019

    bhr sot-89

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers


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    PDF OT-89 OD-123+ 060TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH bhr sot-89

    marking BHR

    Abstract: marking 4a sot-89 SOT89 transistor marking 4A BHR SOT89 bhr sot-89 TRANSISTOR br bhr marking 05 SOT 89 4A SOT89 2SB1386 sot 89 transistor
    Text: 2SB1386 SOT-89 Transistor PNP 1. BASE SOT-89 1 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3 3. EMITTER B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Low collector saturation voltage, Execllent current-to-gain characteristics 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF 2SB1386 OT-89 OT-89 -500mA -100mA -50mA 30MHz marking BHR marking 4a sot-89 SOT89 transistor marking 4A BHR SOT89 bhr sot-89 TRANSISTOR br bhr marking 05 SOT 89 4A SOT89 2SB1386 sot 89 transistor

    transistor p86

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


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    PDF 2SB1386PPT -10mA -40mA -35mA -30mA -25mA -20mA -15mA -50mA -45mA transistor p86

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 PNP SILICON TRANSISTOR LOW FREQU EN CY PN P T RAN SI ST OR 1 ̈ FEAT U RES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ̈ SOT-89 ORDERI N G I N FORM AT I ON Order Number Lead Free Halogen Free


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    PDF 2SB1386 OT-89 2SB1386L-x-AB3-R 2SB1386G-x-AB3-R QW-R208-019

    2sb132

    Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100
    Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2


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    PDF 2SB1386 2SB1412 2SB1326 2SB1412 SC-62 SC-63 2sb132 2SB1326 2SD2097 2SD2098 2SD2118 T100

    2SB1386

    Abstract: MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k
    Text: 2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value


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    PDF 2SB1386 OT-89 28-Oct-05 OT-89 500TYP 2SB1386 MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k

    d204 transistor

    Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204
    Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /


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    PDF 2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386-P MCC TM Micro Commercial Components 2SB1386-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1386-R Features x x • • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage


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    PDF 2SB1386-P 2SB1386-Q 2SB1386-R OT-89

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386-P MCC TM Micro Commercial Components 2SB1386-Q   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1386-R Features x x • • • • PNP Silicon Epitaxial Transistors Low Collector Saturation Voltage


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    PDF 2SB1386-P 2SB1386-Q 2SB1386-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R


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    PDF 2SB1386 2SB1386G-x-AB3-R OT-89 QW-R208-019

    transistor p86

    Abstract: transistor p86 sot-89 v5000 p86 marking
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


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    PDF 2SB1386PT SC-62/SOT-89 SC-62/SOT-89) SC-62/SOT-89OR -10mA -40mA -35mA -30mA -25mA -20mA transistor p86 transistor p86 sot-89 v5000 p86 marking

    2SB1386

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION


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    PDF 2SB1386 OT-89 2SB1386L 2SB1386-x-AB3-R 2SB1386L-x-AB3-R QW-R208-019 2SB1386

    2SB1386GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)


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    PDF 2SB1386GP SC-62/SOT-89 SC-62/SOT-89) SC-62/SOT-89TOR -10mA -40mA -35mA -30mA -25mA -20mA 2SB1386GP

    Untitled

    Abstract: No abstract text available
    Text: SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES ∙ Low collector saturation voltage,typically VCE(sat)=-0.35V ∙ Execllent current-to-gain characteristics MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units


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    PDF OT-89 2SB1386 -500mA -100mA -50mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


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    PDF 2SB1386

    2SB1386

    Abstract: No abstract text available
    Text: 2SB1386 Epitaxial Planar Transistor PNP Silicon COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20


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    PDF 2SB1386 OT-23 2SB1386= OT-23 2SB1386

    2SB1386U

    Abstract: ST2SB1386U
    Text: ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC


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    PDF 2SB1386U OT-89 2SB1386U ST2SB1386U

    marking BHR

    Abstract: marking BHp SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1386 TRANSISTOR PNP FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-89-3L OT-89-3L 2SB1386 marking BHR marking BHp SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2 SB 1386 / 2 SB 1412 / 2 SB 1326 / 2 SB 1436 • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). 2SB1412 2SB1386 VcE(sai) = -0 .3 5 V (Typ.) 2 ^2 6 .5 ± 0 .2 (|C/ | B = - 4 A / - 0 . 1 A )


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    PDF 2SB1412 2SB1386 2SD2118 2SD2166. SC-62 3B1326/2SB1436

    Untitled

    Abstract: No abstract text available
    Text: HOE D ROHM CO LTD n □ □ □ ¿ b lS S BBRHM 2SB1306/2SB1307M/2SB1326/2SB1386 /T ra n s is to rs 7^27-21 S B 1 3 S / 2 S B 1 3 7 2 S 3 1 3 2 3 / 2 5 3 1 3 S S 7 tl7 - Z IV 3 VhJJVSVvJI-r 2 m m m t i m m m / L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors


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    PDF 2SB1306/2SB1307M/2SB1326/2SB1386

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A


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    PDF 2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 QG14737 2SB1412F5 2SB1412F5

    2SB1436

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2SB1386/2SB1412/2SB1326/2SB1436 • F e a tu re s 1) •E xtern a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = —0.35V (Typ.) (I c / I b = -4 A / -0 .1 A ) 2) Excellent D C current gain charac­ teristics.


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    PDF 2SB1386/2SB1412/2SB1326/2SB1436 2SB1386 2SD2098/ 2SD2118/2SD2097/2SD2166. 2SB1412 SC-62 SC-63 2SB1326 2SB1436 2SB1436