AGRB10XM
Abstract: JESD22-C101A DSA00206784.txt
Text: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.
|
Original
|
PDF
|
AGRB10XM
AGRB10
DS04-140RFPP
PB04-052RFPP)
AGRB10XM
JESD22-C101A
DSA00206784.txt
|
Untitled
Abstract: No abstract text available
Text: Product Brief February 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
|
Original
|
PDF
|
AGRB10XM
PB04-052RFPP
PB04-009RFPP)
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.
|
Original
|
PDF
|
AGRB10XM
AGRB10
DS04-203RFPP
DS04-140RFPP)
|
Untitled
Abstract: No abstract text available
Text: Product Brief January 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGRB10XM is a broadband, general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor
|
Original
|
PDF
|
AGRB10XM
PB04-009RFPP
|
AGRB10E
Abstract: AGRB10E equivalent JESD22-C101A 1661 mhz
Text: Preliminary Data Sheet February 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)
|
Original
|
PDF
|
AGRB10E
AGRB10E
DS04-097RFPP
DS03-164RFPP)
AGRB10E equivalent
JESD22-C101A
1661 mhz
|
AGRB10E
Abstract: JESD22-C101A Inmarsat
Text: Preliminary Data Sheet January 2004 AGRB10E 10 W, 1.0 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRB10E (1.0 GHz to 2.7 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS)
|
Original
|
PDF
|
AGRB10E
AGRB10E
envir32/F,
DS03-164RFPP
DS03-038RFPP)
JESD22-C101A
Inmarsat
|
AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
|
Original
|
PDF
|
CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
|