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Advanced Semiconductor Inc AGR19125EF RF MOSFET Transistors 1.93-1.99GHz 24Watt Gain 15dB
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Mouser Electronics	AGR19125EF					1 - 10 $91.81 100 $87.98 1000 $87.98 10000 $87.98	Get Quote

AGR19125E Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR19125E		TriQuint Semiconductor	125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19125EF		Agere Systems	125 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19125EU		Agere Systems	125 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF

AGR19125E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Product Brief March 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E AGR19125E AGR19125EU AGR19125EF IS-95/97 co-712-4106) PB03-069RFPP
Untitled Abstract: No abstract text available Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125EU AGR19125EF
equivalent transistor PT 3500 Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 DS04-161RFPP DS04-035RFPP) equivalent transistor PT 3500 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A
J119 transistor Abstract: J555 Text: Preliminary Data Sheet November 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125EU AGR19125EF DS04-035RFPP DS01-215RFPP) J119 transistor J555
J555 Abstract: No abstract text available Text: Preliminary Data Sheet July 2003 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125EU AGR19125EF DS01-215RFPP J555
100B100JW500X Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25 Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 IS-95) 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A 1961-25
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	PDF	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM