siemens 250 87
Abstract: No abstract text available
Text: 32E D • A23b32G 001724^ □ « S I P PIMP Silicon Transistors SIEMENS/ SPCL-, SEMICONDS _ • For A F input stages and driver applications • High current gain • Low collector-em itter saturation voltage • Low noise between 30 Hz and 15 kHz
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A23b32G
23b320
0G17254
siemens 250 87
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BCX70J
Abstract: No abstract text available
Text: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz
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A23b32G
BCW60
BCX70
102kHz
BCX70J
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Untitled
Abstract: No abstract text available
Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance
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23b3S0
QQ17177
BSS192
-240V
Q62702-S602
23b320
T-37-25
80f/a;
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RTM 866 - 485
Abstract: No abstract text available
Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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023ti32Q
BFP93A
62702-F
OT-143
RTM 866 - 485
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Untitled
Abstract: No abstract text available
Text: TT 3EE D • Ö23b320 OOlbSöl 3 ISIP BB 811 Silicon Tuning Diode SIEMENS/ SPCL-. SEMICONDS _ T—07—16 C a th o d e • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type M arking O rdering code taped Package BB 811 white/T.
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23b320
Q62702-B478
D-123
A23b32G
T-07-16
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Untitled
Abstract: No abstract text available
Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type
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fl23b32Q
GG1722S
SMBT2907
Q68000-A4336
Q68000-A4337
Q68000-A6501
Q68000-A6474
1/CE-20V
23b32Q
A23b32G
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Untitled
Abstract: No abstract text available
Text: 32E D • fi23b32Q QOlbSlb 3 » S I P Silicon Switching Diodes T '0 2 -U BAS 78A. BAS 78D _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage Type M arking O rdering co d e 12-m m tape Package* BAS 78A
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fi23b32Q
Q62702
OT-223
BAS78D
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Untitled
Abstract: No abstract text available
Text: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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623b320
BFQ29P
62702-F
OT-23
/o-20m
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Untitled
Abstract: No abstract text available
Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!
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023b3SG
62702-F1
OT-143
-J250
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