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    A1315 Price and Stock

    Allegro MicroSystems LLC A1315LLHLX-5-T

    IC HALL EFFECT SENSOR SOT23W
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    DigiKey A1315LLHLX-5-T Digi-Reel 22,935 1
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    A1315LLHLX-5-T Cut Tape 22,935 1
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    Mouser Electronics A1315LLHLX-5-T 28,518
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    Allegro MicroSystems LLC A1315LLHLT-2-T

    IC HALL EFFECT SENSOR SOT23W
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    DigiKey A1315LLHLT-2-T Cut Tape 5,175 1
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    A1315LLHLT-2-T Digi-Reel 5,175 1
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    Mouser Electronics A1315LLHLT-2-T 3,339
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    LEDIL CA13156_EMERALD-A

    LENS CLEAR OVAL ADH TAPE
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    DigiKey CA13156_EMERALD-A Tray 4,643 1
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    Avnet Americas CA13156_EMERALD-A Reel 336
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    Mouser Electronics CA13156_EMERALD-A 736
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    Newark CA13156_EMERALD-A Bulk 112
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    TME CA13156_EMERALD-A 1
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    Avnet Silica CA13156_EMERALD-A 7 Weeks 336
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    EBV Elektronik CA13156_EMERALD-A 25,088 7 Weeks 336
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    New Advantage Corporation CA13156_EMERALD-A 672 1
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    Amphenol CONEC 122A13159X

    CONN DIN RCPT 48POS IN-LINE GOLD
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    DigiKey 122A13159X Box 80
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    Vishay Sprague TVA1315-E3

    CAP ALUM 500UF 50V AXIAL TH
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    A1315 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rso 4890

    Abstract: No abstract text available
    Text: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA & 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 240pin 72-bit 60FBGA 63FBGA rso 4890

    2SA1315

    Abstract: 2SC3328 A1315
    Text: A1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 A1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    PDF 2SA1315 2SC3328 O-92MOD 2SA1315 2SC3328 A1315

    23/HMP125U7EFR8C-C4/Y5/S6/S5

    Abstract: No abstract text available
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb version C This Hynix Registered Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb version C based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width


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    PDF 240pin 55max 1240pin HYMP31GP72CMP4, HYMP151P72CP8, HYMP125P72CP8 23/HMP125U7EFR8C-C4/Y5/S6/S5

    NT2GT72U4PD0BV-AC

    Abstract: No abstract text available
    Text: NT4GT72U4ND0BV NT2GT72U4PD0BV NT1GT72U89D1BV 4GB: 512MX72 / 2GB: 256M x 72 / 1GB: 128M x72 Registered DDR2 SDRAM DIMM Preliminary Edition 240pin Registered DDR2 SDRAM MODULE Based on 128Mx8 1GB and 256MX4 (2GB/4GB) DDR2 SDRAM Die D Features • 128Mx72 Registered DDR2 DIMM based on 128Mx8 DDR2


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    PDF NT4GT72U4ND0BV NT2GT72U4PD0BV NT1GT72U89D1BV 512MX72 240pin 128Mx8 256MX4 128Mx72 128Mx8 NT5TU128M8DE) NT2GT72U4PD0BV-AC

    a1273 transistor DATA

    Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
    Text: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


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    PDF 80C186EB/80C188EB sa-16 a1273 transistor DATA a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270

    A1306 TRANSISTOR

    Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
    Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


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    PDF 80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor

    H5PS1G

    Abstract: DDR2-533 DDR2-667 DDR2-800 RA13 256M DRAM
    Text: 240pin DDR2 VLP Registerd DIMMs based on 1Gb E version This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 1Gb E version DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb E version based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of


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    PDF 240pin HMP112V7EFR8C-C4/Y5/S6 128Mbx72 HMP125V7EFR4C-C4/Y5/S6 256Mbx72 HMP351V7EMR4C-C4/Y5/S6 256Mx72 HMP41GV7EHR4C 1240pin H5PS1G DDR2-533 DDR2-667 DDR2-800 RA13 256M DRAM

    HYMP125P72CP8

    Abstract: HYMP151P72CP4 DDR2-400 DDR2-533 HYMP31G
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb version C This Hynix Registered Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb version C based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width


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    PDF 240pin 55max 1240pin HYMP31GP72CMP4, HYMP151P72CP8, HYMP125P72CP8 HYMP125P72CP8 HYMP151P72CP4 DDR2-400 DDR2-533 HYMP31G

    HYMP512P72CP4-C4

    Abstract: HYMp525p72cp4 HY5PS12821CFP HYMP512R72CP4-E3 HYMP512R72CP8-E3 HYMP525R72CP4-E3 HYMP564R72CP8-E3
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb C ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb C ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb C ver. based Registered DDR2 DIMM


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    PDF 240pin 512Mb HYMP564R72CP8-E3 512MB 64Mx72 64Mx8 HY5PS12821CFP) HYMP564P72CP8-C4/Y5 HYMP512P72CP4-C4 HYMp525p72cp4 HY5PS12821CFP HYMP512R72CP4-E3 HYMP512R72CP8-E3 HYMP525R72CP4-E3 HYMP564R72CP8-E3

    Untitled

    Abstract: No abstract text available
    Text: EMH2412 Ordering number : A1315A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2412 General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type


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    PDF EMH2412 ENA1315A 900mm2Ã A1315-7/7

    PJ7D

    Abstract: pj6d pj3d pj4d diagrama lg lcd 22 block diagram representing the transmission and reciving rx 3152 27Mhz tranceiver of 6 channel datasheet RTX 433 11-pin pager board
    Text: Data Book 32bit Micro controller TLCS-900/H1 series TMP92CH21FG TENTATIVE Rev0.92 11th/Jul./2002 Since this Revision 0.92 is still under working, there may be some mistakes in it. When you will start to design, please order the latest one. - Contents-1.


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    PDF 32bit TLCS-900/H1 TMP92CH21FG 11th/Jul 92CH21-1 92CH21-5 92CH21-6 92CH21-12 PJ7D pj6d pj3d pj4d diagrama lg lcd 22 block diagram representing the transmission and reciving rx 3152 27Mhz tranceiver of 6 channel datasheet RTX 433 11-pin pager board

    Untitled

    Abstract: No abstract text available
    Text: EMH2412 Ordering number : A1315A SANYO Semiconductors DATA SHEET EMH2412 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type


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    PDF EMH2412 ENA1315A 900mm2Ã A1315-7/7

    l6703

    Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
    Text: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS


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    PDF X3904U: X3905U: X3906U: X3907U: X3908U: X3910W: X3912W: X3913W: X3915W: X3916U: l6703 L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671

    a1315

    Abstract: No abstract text available
    Text: Ordering number : A1315A EMH2412 N-Channel Power MOSFET http://onsemi.com 24V, 6A, 27mΩ, Dual EMH8 Features • • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type 2.5V drive Halogen free compliance


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    PDF ENA1315A EMH2412 PW10s, 900mm2 A1315-7/7 a1315

    L6284

    Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
    Text: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2


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    PDF L6875W: L6284 A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor

    XPS 1540

    Abstract: cs 5390 63FBGA M393T5663CZ3 CS 5800 M393T5160CZA
    Text: RDIMM DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA & 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


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    PDF 240pin 72-bit 60FBGA 63FBGA XPS 1540 cs 5390 M393T5663CZ3 CS 5800 M393T5160CZA

    DDR2 SDRAM DIMM

    Abstract: No abstract text available
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb version C This Hynix Registered Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb version C based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width


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    PDF 240pin 55max 1240pin HYMP31GP72CMP4, HYMP151P72CP8, HYMP125P72CP8 DDR2 SDRAM DIMM

    DDR2 Hynix 2Gb x 8

    Abstract: HYMP351
    Text: 240pin DDR2 VLP Registerd DIMMs based on 1Gb C version This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 1Gb C version DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb C version based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of


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    PDF 240pin HYMP112P72CP8L-C4/Y5/S6 HYMP125P72CP4L-C4/Y5/S6 HYMP351P72CMP4L-C4/Y5/S6 HYMP41GP72CNP4L-C4/Y5 128Mbx72 256Mbx72 512Mbx72 1Gbx72 DDR2 Hynix 2Gb x 8 HYMP351

    H5PS1G

    Abstract: No abstract text available
    Text: 240pin DDR2 VLP Registerd DIMMs based on 1Gb E version This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 1Gb E version DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb E version based VLP Registered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of


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    PDF 240pin HMP112V7EFR8C-C4/Y5/S6 HMP125V7EFR4C-C4/Y5/S6 HMP351V7EMR4C-C4/Y5/S6 128Mbx72 256Mbx72 512Mbx72 1240pin 256Mx72 H5PS1G

    HYMP525R72BP4-E3

    Abstract: HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM


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    PDF 240pin 512Mb HYMP564R72BP8-E3/C4 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP564P72BP8-E3/C4/Y5/S5 HYMP525R72BP4-E3 HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP

    C67078-A1315-A2

    Abstract: No abstract text available
    Text: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings


    OCR Scan
    PDF O-220 C67078-A1315-A2 C67078-A1315-A3

    5757H

    Abstract: A1318 U DP83905
    Text: S e m i c o n d u c t o r DP83905 AT/LANTIC AT Local Area Network Twisted-Pair Interface Controller General Description Features The AT/LANTIC AT Local Area Network Twisted-pair Inter­ face Controller is a CMOS VLSI device designed for easy implementation of CSMA/CD local area networks.


    OCR Scan
    PDF DP83905 DP83905 NE2000 PLUS16TM. 10BASE5 5757H A1318 U

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


    OCR Scan
    PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan
    PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A