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Vishay Siliconix SIHS36N50D-GE3 D SERIES POWER MOSFET SUPER-247,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHS36N50D-GE3	Tube	523		1	1 $7.77 10 $7.77 100 $4.50233 1000 $3.3 10000 $3.3	Buy Now
Vishay Siliconix SIHS36N50D-E3 MOSFET N-CH 500V 36A SUPER-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHS36N50D-E3	Tube			500	1 - 10 - 100 - 1000 $3.49462 10000 $3.49462	Buy Now
Vishay Intertechnologies SIHS36N50D-E3 Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes \|Vishay SIHS36N50D-E3
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Newark	SIHS36N50D-E3	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIHS36N50D-GE3 Mosfet, N-Ch, 500V, 36A, Super-247 Rohs Compliant: Yes \|Vishay SIHS36N50D-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SIHS36N50D-GE3	Bulk			1	1 $6.03 10 $5.73 100 $4.06 1000 $3.59 10000 $3.59	Buy Now
TME	SIHS36N50D-GE3				1	1 $7.6 10 $6.85 100 $6.05 1000 $5.08 10000 $5.08	Get Quote
Vishay Intertechnologies SIHS36N50DE3 D SERIES POWER MOSFET Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIHS36N50DE3		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHS36N50D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHS36N50D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 36A SUPER-247		Original	PDF
SIHS36N50D-GE3		Vishay Siliconix	D SERIES POWER MOSFET SUPER-247,		Original	PDF

SIHS36N50D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SIHS36N50D Abstract: No abstract text available Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHS36N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHS36N50D AN609, 0906m 2247m 0347m 6500m 9643m 5662m 07-May-12
Untitled Abstract: No abstract text available Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	PDF	SiHS36N50D Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	PDF	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
AN844 Abstract: No abstract text available Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power	Original	PDF	AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .	Original	PDF	SiHx12N50E SiHx15N50E SiHx20N50E SiHx25N50E O-247 O-247AC O-220 O-220 O-220AB O-263)