IRFRC20
Abstract: IRFRC20PBF irfuc20 transistor IRFRC20 SiHFRC20 SiHFRC20-E3 SiHFUC20 RthJA
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) • • • • • • • •
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
IRFRC20/SiHFRC20)
IRFUC20/SiHFUC20)
18-Jul-08
IRFRC20
IRFRC20PBF
irfuc20
transistor IRFRC20
SiHFRC20-E3
RthJA
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IRFRC20
Abstract: IRFUC20 SiHFRC20 SiHFRC20-E3 SiHFRC20-GE3 SiHFRC20TRL-GE3 SiHFUC20
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
IRFRC20
IRFUC20
SiHFRC20-E3
SiHFRC20-GE3
SiHFRC20TRL-GE3
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IRFRC20
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
IRFRC20/SiHFRC20)
IRFUC20/SiHFUC20)
O-252)
O-251)
18-Jul-08
IRFRC20
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IRFRC20
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
2002/95/EC
O-252)
IRFRC20
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diode BY 127
Abstract: IRFRC20
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
2002/95/EC
O-252)
diode BY 127
IRFRC20
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AN609
Abstract: SiHFRC20 SiHFUC20
Text: SiHFRC20_RC, SiHFUC20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiHFRC20
SiHFUC20
AN609,
2165m
8432m
3484m
4938m
7372m
8643m
18-Aug-10
AN609
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Untitled
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) () VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252)
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
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Untitled
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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PDF
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
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irfuc20
Abstract: IRFRC20PBF IRFRC20 SiHFRC20 SiHFRC20-E3 SiHFUC20 IRFRC20TRLPBF IRFRC20TRPBF
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated
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PDF
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
irfuc20
IRFRC20PBF
IRFRC20
SiHFRC20-E3
IRFRC20TRLPBF
IRFRC20TRPBF
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Untitled
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) () VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252)
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFUC20
Abstract: IRFRC20 SiHFRC20-E3 SiHFRC20-GE3 SiHFRC20 SiHFRC20TRL-GE3 SiHFUC20 IRFRC20TRPBF SiHFRC20TR-GE3
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
O-252)
O-251)
IRFUC20
IRFRC20
SiHFRC20-E3
SiHFRC20-GE3
SiHFRC20TRL-GE3
IRFRC20TRPBF
SiHFRC20TR-GE3
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IRFRC20TRLPBF
Abstract: IRFRC20
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
2002/95/EC
O-252)
IRFRC20TRLPBF
IRFRC20
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IRFRC20
Abstract: No abstract text available
Text: IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 600 RDS(on) (Ω) VGS = 10 V 4.4 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 8.9 Configuration Single D DPAK (TO-252) IPAK (TO-251) • • • • • • • •
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Original
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PDF
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IRFRC20,
IRFUC20,
SiHFRC20
SiHFUC20
IRFRC20/SiHFRC20)
IRFUC20/SiHFUC20)
O-252)
O-251)
12-Mar-07
IRFRC20
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