IRF9620
Abstract: SiHF9620 SiHF9620-E3 diode 18B
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
O-220
O-220
18-Jul-08
IRF9620
SiHF9620-E3
diode 18B
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S Available RoHS* COMPLIANT DESCRIPTION The Power MOSFETs technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
SMD-220
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRF9620S
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
O-263)
18-Jul-08
IRF9620S
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
IRF9620S
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
11-Mar-11
IRF9620S
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
O-220
O-220
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
2002/95/EC
O-263)
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
AN609
Abstract: IRF9620 SiHF9620
Text: IRF9620_RC, SiHF9620_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
IRF9620
SiHF9620
AN609,
22-Mar-10
AN609
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
IRF9620
Abstract: SiHF9620 SiHF9620-E3
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
O-220AB
11-Mar-11
IRF9620
SiHF9620-E3
|
low threshold mosfet p-channel TO-220
Abstract: IRF9620 SiHF9620 SiHF9620-E3
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
O-220
O-220
low threshold mosfet p-channel TO-220
IRF9620
SiHF9620-E3
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 1.5 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
O-263)
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements
|
Original
|
PDF
|
IRF9620,
SiHF9620
2002/95/EC
O-220AB
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRF9620S, SiHF9620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) (Ω) VGS = - 10 V 1.5 Qg (Max.) (nC) 22 Qgs (nC) 12 Qgd (nC) 10 Configuration Single S Available RoHS* COMPLIANT DESCRIPTION The Power MOSFETs technology is the key to Vishay’s
|
Original
|
PDF
|
IRF9620S,
SiHF9620S
SMD-220
12-Mar-07
|