Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHF9530 Search Results

    SF Impression Pixel

    SIHF9530 Price and Stock

    Vishay Intertechnologies SIHF9530S-GE3

    Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF9530S-GE3 948 1
    • 1 $0.773
    • 10 $0.649
    • 100 $0.516
    • 1000 $0.481
    • 10000 $0.481
    		Buy Now
    EBV Elektronik SIHF9530S-GE3 14 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SIHF9530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9530S

    Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S O-263) 2002/95/EC 11-Mar-11 IRF9530S SiHF9530S-E3 SiHF9530S-GE3

    SiHF9530S-E3

    Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel


    Original     		PDF IRF9530S, SiHF9530S O-263) 18-Jul-08 SiHF9530S-E3 IRF9530S IRF9530STRRPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    91077

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S 2002/95/EC O-263) 18-Jul-08 91077

    Untitled

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: IRF9530S SiHF9530S
    Text: IRF9530S_RC, SiHF9530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9530S SiHF9530S AN609, 18-Mar-10 AN609

    SMD220

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel


    Original     		PDF IRF9530S, SiHF9530S SMD-220 12-Mar-07 SMD220

    AN609

    Abstract: IRF9530
    Text: IRF9530_RC, SiHF9530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9530 SiHF9530 AN609, 18-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF9530

    Abstract: IRF9530 mosfet
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9530 IRF9530 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF9530S, SiHF9530S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF9530

    Abstract: IRF9530PBF IRF9530 mosfet
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 O-220 O-220 18-Jul-08 IRF9530 IRF9530PBF IRF9530 mosfet

    IRF9530 international

    Abstract: irf9530
    Text: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S TO-220 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRF9530, SiHF9530 O-220 O-220 12-Mar-07 IRF9530 international irf9530

    IRF9530S

    Abstract: SiHF9530S
    Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel


    Original     		PDF IRF9530S, SiHF9530S SMD-220 18-Jul-08 IRF9530S

    max16833

    Abstract: 9r5m GCM188R71H102KA37D 30BQ100TRPBF IRLR3110 MAX16833B MAX16833EVKIT MAX16833AUE GCM188R71H GCM188R71H102KA37
    Text: 19-5299; Rev 0; 6/10 MAX16833 Evaluation Kit Features The MAX16833 evaluation kit EV kit provides a proven design to evaluate the MAX16833 high-voltage HB LED driver with integrated high-side current sense. The EV kit is set up for boost and buck-boost configurations


    Original     		PDF MAX16833 MAX16833/MAX16833B 9r5m GCM188R71H102KA37D 30BQ100TRPBF IRLR3110 MAX16833B MAX16833EVKIT MAX16833AUE GCM188R71H GCM188R71H102KA37

    Untitled

    Abstract: No abstract text available
    Text: MAX16833 Evaluation Kit Evaluates: MAX16833/MAX16833B General Description Features The MAX16833 evaluation kit EV kit provides a proven design to evaluate the MAX16833 high-voltage HB LED driver with integrated high-side current sense. The EV kit is set up for boost and buck-boost configurations


    Original     		PDF MAX16833 MAX16833/MAX16833B