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    SI8483DB Price and Stock

    Vishay Siliconix SI8483DB-T2-E1

    MOSFET P-CH 12V 16A 6MICRO FOOT
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    DigiKey SI8483DB-T2-E1 Cut Tape 16,799 1
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    SI8483DB-T2-E1 Digi-Reel 16,799 1
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    SI8483DB-T2-E1 Reel 15,000 3,000
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    Vishay Intertechnologies SI8483DB-T2-E1

    Trans MOSFET P-CH 12V 8.7A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8483DB-T2-E1)
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    Avnet Americas SI8483DB-T2-E1 Reel 51,000 6 Weeks 3,000
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    SI8483DB-T2-E1 Ammo Pack 16 Weeks, 5 Days 1
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    SI8483DB-T2-E1 Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics SI8483DB-T2-E1 46,499
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    Verical SI8483DB-T2-E1 3,773 848
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    SI8483DB-T2-E1 2,101 38
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    Arrow Electronics SI8483DB-T2-E1 Cut Strips 2,101 12 Weeks 1
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    Newark SI8483DB-T2-E1 Cut Tape 3,773 1
    • 1 $0.059
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    SI8483DB-T2-E1 Cut Tape 3,000 1
    • 1 $0.144
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    SI8483DB-T2-E1 Reel 1
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    TTI SI8483DB-T2-E1 Reel 126,000 3,000
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    Avnet Asia SI8483DB-T2-E1 8 Weeks 3,000
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    EBV Elektronik SI8483DB-T2-E1 7 Weeks 3,000
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    Vishay Intertechnologies SI8483DB-T2-E1.

    Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:13W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI8483DB-T2-E1.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI8483DB-T2-E1. Reel 3,000
    • 1 $0.153
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    Vishay Huntington SI8483DB-T2-E1

    MOSFET P-CH 12V 16A 6MICRO FOOT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI8483DB-T2-E1 324,000
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    • 10000 $0.1624
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    SI8483DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8483DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 16A MICROFOOT Original PDF

    SI8483DB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si8483DB

    Abstract: Si8483DB-T2-E1 si8483
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS


    Original     		Si8483DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si8483DB-T2-E1 si8483 PDF

    A8483

    Abstract: No abstract text available
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile


    Original     		Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 A8483 PDF

    Si8483DB

    Abstract: No abstract text available
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS


    Original     		Si8483DB 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 RDS(on) () (MAX.) ID (A) e 0.026 at VGS = -4.5 V -16 0.035 at VGS = -2.5 V -16 0.055 at VGS = -1.8 V -13 0.092 at VGS = -1.5 V -2.5 MICRO FOOT 1.5 x 1


    Original     		Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si8483DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8483DB www.vishay.com Vishay Siliconix P-Channel 12 V D-S MSOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si8483DB 11-Mar-11 PDF

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		Si8489EDB Si8902AEDB VMN-PT0107-1402 PDF