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    SI8425 Price and Stock

    Vishay Siliconix SI8425DB-T1-E1

    MOSFET P-CH 20V 4WLCSP
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    DigiKey SI8425DB-T1-E1 Cut Tape 2,982 1
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    SI8425DB-T1-E1 Digi-Reel 2,982 1
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    SI8425DB-T1-E1 Reel 3,000
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    New Advantage Corporation SI8425DB-T1-E1 24,000 1
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    Skyworks Solutions Inc SI8425AB-D-IS

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    DigiKey SI8425AB-D-IS Tube 96
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    Mouser Electronics SI8425AB-D-IS
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    Skyworks Solutions Inc SI8425BB-D-IS

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    Mouser Electronics SI8425BB-D-IS
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    Skyworks Solutions Inc SI8425BB-D-ISR

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    DigiKey SI8425BB-D-ISR Reel 2,500
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    Skyworks Solutions Inc SI8425AB-D-ISR

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    DigiKey SI8425AB-D-ISR Reel 2,500
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    Richardson RFPD SI8425AB-D-ISR 1
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    SI8425 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8425DB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT Original PDF

    SI8425 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8425DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8425DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a, e 0.023 at VGS = - 4.5 V - 9.3 0.027 at VGS = - 2.5 V - 6.2 0.040 at VGS = - 1.8 V - 5.1 Qg (Typ.) 36 nC TrenchFET Power MOSFET Low-on Resistance


    Original     		PDF Si8425DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8425DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) a, e 0.023 at VGS = -4.5 V -9.3 0.027 at VGS = -2.5 V -6.2 0.040 at VGS = -1.8 V -5.1 Qg (TYP.) 36 nC • Low-on resistance


    Original     		PDF Si8425DB 842xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402