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    SI4909DY Search Results

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    SI4909DY Price and Stock

    Vishay Siliconix SI4909DY-T1-GE3

    MOSFET 2P-CH 40V 8A 8SOIC
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    DigiKey SI4909DY-T1-GE3 Cut Tape 15,774 1
    • 1 $1.57
    • 10 $0.992
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    SI4909DY-T1-GE3 Digi-Reel 15,774 1
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    SI4909DY-T1-GE3 Reel 15,000 2,500
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    RS SI4909DY-T1-GE3 Bulk 20
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    New Advantage Corporation SI4909DY-T1-GE3 2,500 1
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    Vishay Intertechnologies SI4909DY-T1-GE3

    DUAL P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4909DY-T1-GE3)
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    Avnet Americas SI4909DY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4909DY-T1-GE3 9,891
    • 1 $1.01
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    Verical SI4909DY-T1-GE3 2,500 2,500
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    SI4909DY-T1-GE3 2,500 2,500
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    SI4909DY-T1-GE3 2,500 2,500
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    SI4909DY-T1-GE3 16 15
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    Arrow Electronics SI4909DY-T1-GE3 2,500 17 Weeks 2,500
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    SI4909DY-T1-GE3 2,500 17 Weeks 2,500
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    SI4909DY-T1-GE3 Cut Strips 16 17 Weeks 1
    • 1 $0.6371
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    Newark SI4909DY-T1-GE3 Cut Tape 2,500
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    SI4909DY-T1-GE3 Reel 2,500
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    Bristol Electronics SI4909DY-T1-GE3 186
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    Quest Components SI4909DY-T1-GE3 200
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    SI4909DY-T1-GE3 200
    • 1 $1.25
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    TTI SI4909DY-T1-GE3 Reel 22,500 2,500
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    EBV Elektronik SI4909DY-T1-GE3 18 Weeks 2,500
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    Vishay Intertechnologies SI4909DY-TI-GE3

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    Bristol Electronics SI4909DY-TI-GE3 1,162
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    Vishay BLH SI4909DY-T1-GE3

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    Bristol Electronics SI4909DY-T1-GE3 250 6
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    Vishay Huntington SI4909DY-T1-GE3

    MOSFET 2P-CH 40V 8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4909DY-T1-GE3 27,400
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    SI4909DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4909DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 40V 8A 8SO Original PDF

    SI4909DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4909DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4909DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4909DY 2002/95/EC Si4909DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Heat Trace

    Abstract: SI4909DY 51A SO8 si4909
    Text: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4909DY 2002/95/EC Si4909DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Heat Trace 51A SO8 si4909

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4909DY 2002/95/EC Si4909DY-T1-GE3 11-Mar-11

    Si4909DY

    Abstract: No abstract text available
    Text: Si4909DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4909DY AN609, Jct-10 5621m 3489m 9434m 9164m 0716m 1035m

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4909DY Vishay Siliconix Dual P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 40 ID (A)d 0.027 at VGS = - 10 V -8 0.034 at VGS = - 4.5 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4909DY 2002/95/EC Si4909DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    LTC4417GN

    Abstract: LTC3690 cvs3 power v1 v2 v3 uv1 uv2 uv3 valid1 valid2 valid3 LTC4417 LTC4417IUF Si4909DY FDS6675BNZ LTC4417HGN UV3 marking
    Text: LTC4417 Prioritized PowerPath Controller Description Features Selects Highest Priority Supply from Three Inputs n Blocks Reverse and Cross Conduction Currents n Wide Operating Voltage Range: 2.5V to 36V n –42V Protection Against Reverse Battery Connection


    Original
    PDF 24-Lead LTC4417 OT-23 MSOP-16 DFN-16 SO-16, DFN-14 TSSOP-20 LTC4417GN LTC3690 cvs3 power v1 v2 v3 uv1 uv2 uv3 valid1 valid2 valid3 LTC4417IUF Si4909DY FDS6675BNZ LTC4417HGN UV3 marking