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    SI4497DY Search Results

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    SI4497DY Price and Stock

    Vishay Siliconix SI4497DY-T1-GE3

    MOSFET P-CH 30V 36A 8SO
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    DigiKey SI4497DY-T1-GE3 Reel 12,500 2,500
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    • 10000 $0.76
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    Vishay Intertechnologies SI4497DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4497DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4497DY-T1-GE3 Reel 17 Weeks 2,500
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    • 10000 $0.73608
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    Mouser Electronics SI4497DY-T1-GE3 21,066
    • 1 $2.26
    • 10 $1.56
    • 100 $1.15
    • 1000 $0.858
    • 10000 $0.76
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    Verical SI4497DY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4497DY-T1-GE3 2,500 17 Weeks 2,500
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    • 10000 $0.799
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    Newark SI4497DY-T1-GE3 Cut Tape 2,500
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    • 1000 $1.13
    • 10000 $1.13
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    SI4497DY-T1-GE3 Reel 2,500
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    • 10000 $0.822
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    TTI SI4497DY-T1-GE3 Reel 12,500 2,500
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    TME SI4497DY-T1-GE3 638 1
    • 1 $1.67
    • 10 $1.43
    • 100 $1.12
    • 1000 $1.11
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    Avnet Asia SI4497DY-T1-GE3 5,000 19 Weeks 2,500
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    EBV Elektronik SI4497DY-T1-GE3 18 Weeks 2,500
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    IBS Electronics SI4497DY-T1-GE3 20,000 367
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    • 1000 $1.183
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    Vishay Milwaukee SI4497DY-T1-GE3

    P-Channel 30-V (D-S) MOSFET Semiconductor | VISHAY-DALE MILWAUKEE RESISTOR SI4497DY-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI4497DY-T1-GE3 Bulk 2,500
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    Vishay Siliconix SI4497DY-T1

    36000MA, 30V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4497DY-T1 33
    • 1 $1.425
    • 10 $1.311
    • 100 $1.14
    • 1000 $1.14
    • 10000 $1.14
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    Others SI4497DYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4497DYT1GE3 2,500
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    SI4497DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4497DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 36A 8-SOIC Original PDF

    SI4497DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4497DY 2002/95/EC Si4497DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4410 mosfet

    Abstract: 6846 4410 AN609 379716
    Text: Si4497DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4497DY AN609, 02-Mar-10 4410 mosfet 6846 4410 AN609 379716

    si4497

    Abstract: Si4497DY
    Text: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08 si4497

    si4497

    Abstract: No abstract text available
    Text: SPICE Device Model Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4497DY 18-Jul-08 si4497

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4497DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4497DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4497DY 2002/95/EC Si4497DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497