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    SI4485DY Search Results

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    SI4485DY Price and Stock

    Vishay Siliconix SI4485DY-T1-GE3

    MOSFET P-CH 30V 6A 8SO
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    DigiKey SI4485DY-T1-GE3 Cut Tape 3,795 1
    • 1 $1
    • 10 $0.623
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    SI4485DY-T1-GE3 Digi-Reel 3,795 1
    • 1 $1
    • 10 $0.623
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    • 1000 $0.28309
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    SI4485DY-T1-GE3 Reel 2,500 2,500
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    Vishay Intertechnologies SI4485DY-T1-GE3

    Trans MOSFET P-CH 30V 5.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4485DY-T1-GE3)
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    Avnet Americas SI4485DY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4485DY-T1-GE3 4,248
    • 1 $0.8
    • 10 $0.519
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    Verical SI4485DY-T1-GE3 2,500 2,500
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    SI4485DY-T1-GE3 74 35
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    Arrow Electronics SI4485DY-T1-GE3 2,500 17 Weeks 2,500
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    SI4485DY-T1-GE3 Cut Strips 74 17 Weeks 1
    • 1 $0.343
    • 10 $0.2943
    • 100 $0.2068
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    Newark SI4485DY-T1-GE3 Cut Tape 2,500
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    SI4485DY-T1-GE3 Reel 2,500
    • 1 $0.282
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    Quest Components SI4485DY-T1-GE3 1,748
    • 1 $2.12
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    SI4485DY-T1-GE3 1,748
    • 1 $2.12
    • 10 $2.12
    • 100 $2.12
    • 1000 $0.8745
    • 10000 $0.795
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    SI4485DY-T1-GE3 1,195
    • 1 $1.25
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    SI4485DY-T1-GE3 1,195
    • 1 $1.25
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    TTI SI4485DY-T1-GE3 Reel 5,000 2,500
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    Avnet Asia SI4485DY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4485DY-T1-GE3 18 Weeks 2,500
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    Others SI4485DYT1GE3

    AVAILABLE EU
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    ComSIT USA SI4485DYT1GE3 7,500
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    SI4485DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4485DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 6A 8-SOIC Original PDF

    SI4485DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    8.8890

    Abstract: AN609 Si4485DY
    Text: Si4485DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4485DY AN609, 02-Jun-09 8.8890 AN609

    Si4485DY

    Abstract: si4485
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 11-Mar-11 si4485

    SI4485DY

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 18-Jul-08

    SI4485DY

    Abstract: si4485
    Text: SPICE Device Model Si4485DY Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4485DY 18-Jul-08 si4485

    Untitled

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4485DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4485DY 2002/95/EC Si4485DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477