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    SI4464DY Price and Stock

    Vishay Siliconix SI4464DY-T1-GE3

    MOSFET N-CH 200V 1.7A 8SO
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    DigiKey SI4464DY-T1-GE3 Cut Tape 3,188 1
    • 1 $1.94
    • 10 $1.237
    • 100 $1.94
    • 1000 $0.60599
    • 10000 $0.60599
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    SI4464DY-T1-GE3 Digi-Reel 3,188 1
    • 1 $1.94
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    • 1000 $0.60599
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    SI4464DY-T1-GE3 Reel 2,500 2,500
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    Quest Components SI4464DY-T1-GE3 40
    • 1 $1.26
    • 10 $1.05
    • 100 $0.756
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    New Advantage Corporation SI4464DY-T1-GE3 2,500 1
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    Vishay Siliconix SI4464DY-T1-E3

    MOSFET N-CH 200V 1.7A 8SO
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    DigiKey SI4464DY-T1-E3 Cut Tape 2,109 1
    • 1 $1.94
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    SI4464DY-T1-E3 Digi-Reel 2,109 1
    • 1 $1.94
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    SI4464DY-T1-E3 Reel 2,500
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    RS SI4464DY-T1-E3 Bulk 2,248 115 Weeks 1
    • 1 $0.68
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    New Advantage Corporation SI4464DY-T1-E3 20,000 1
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    Vishay Intertechnologies SI4464DY-T1-E3

    Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3)
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    Avnet Americas SI4464DY-T1-E3 Reel 10,000 18 Weeks 2,500
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    Mouser Electronics SI4464DY-T1-E3 4,926
    • 1 $1.52
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    • 100 $0.755
    • 1000 $0.606
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    Verical SI4464DY-T1-E3 10,000 2,500
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    SI4464DY-T1-E3 5,000 2,500
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    SI4464DY-T1-E3 2,500 2,500
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    SI4464DY-T1-E3 2,500 10
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    SI4464DY-T1-E3 253 9
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    Arrow Electronics SI4464DY-T1-E3 10,000 18 Weeks 2,500
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    SI4464DY-T1-E3 2,500 18 Weeks 1
    • 1 $0.6225
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    SI4464DY-T1-E3 Cut Strips 253 18 Weeks 1
    • 1 $1.4941
    • 10 $1.0412
    • 100 $0.7178
    • 1000 $0.654
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    Newark SI4464DY-T1-E3 Reel 12,500 2,500
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    SI4464DY-T1-E3 Reel 2,500
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    SI4464DY-T1-E3 Cut Tape 2,500
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    TTI SI4464DY-T1-E3 Reel 2,500
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    TME SI4464DY-T1-E3 1
    • 1 $1.473
    • 10 $1.157
    • 100 $0.936
    • 1000 $0.636
    • 10000 $0.589
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    EBV Elektronik SI4464DY-T1-E3 22 Weeks 2,500
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    Vishay Intertechnologies SI4464DY-T1-GE3

    Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4464DY-T1-GE3 Reel 18 Weeks 2,500
    • 1 -
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    • 10000 $0.61743
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    Mouser Electronics SI4464DY-T1-GE3 10,416
    • 1 $1.69
    • 10 $1.15
    • 100 $0.834
    • 1000 $0.606
    • 10000 $0.604
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    Verical SI4464DY-T1-GE3 2,500 2,500
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    SI4464DY-T1-GE3 2,500 2,500
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    SI4464DY-T1-GE3 100 81
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    Arrow Electronics SI4464DY-T1-GE3 2,500 18 Weeks 2,500
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    Newark SI4464DY-T1-GE3 Cut Tape 4,697 1
    • 1 $0.624
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    SI4464DY-T1-GE3 Reel 2,500
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    TTI SI4464DY-T1-GE3 Reel 67,500 2,500
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    SI4464DY-T1-GE3 Cut Tape 2,500 10
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    EBV Elektronik SI4464DY-T1-GE3 22 Weeks 2,500
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    SI4464DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4464DY Vishay Siliconix MOSFETs Original PDF
    Si4464DY SPICE Device Model Vishay N-Channel 200-V (D-S) MOSFET Original PDF
    SI4464DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC Original PDF
    SI4464DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.7A 8-SOIC Original PDF

    SI4464DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4464DY

    Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original
    PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08 720-51 72051

    SI4464

    Abstract: Si4464DY
    Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4464DY S-51095Rev. 13-Jun-05 SI4464

    Si4464DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4464DY 0-to-10V 28-Feb-03

    Si4464DY-T1-E3

    Abstract: Si4464DY Si4464DY-T1 72051
    Text: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available


    Original
    PDF Si4464DY Si4464DY-T1 Si4464DY-T1-E3 08-Apr-05 72051

    Untitled

    Abstract: No abstract text available
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original
    PDF Si4464DY 2002/96/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 18-Jul-08

    Si4464DY-T1-E3

    Abstract: Si4464DY Si4464DY-T1
    Text: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available


    Original
    PDF Si4464DY Si4464DY-T1 Si4464DY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original
    PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    72051

    Abstract: No abstract text available
    Text: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch


    Original
    PDF Si4464DY 08-Apr-05 72051

    Si4464DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4464DY 18-Jul-08

    72051

    Abstract: No abstract text available
    Text: Si4464DY Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • TrenchFET Power MOSFET • PWM Optimized for (Lowest Qg and Low RG) Pb-free Available


    Original
    PDF Si4464DY Si4464DY-T1 Si4464DY-T1-E3 18-Jul-08 72051

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4464DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4464DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    72051

    Abstract: No abstract text available
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original
    PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 72051

    Si4464DY

    Abstract: 720-51 72051
    Text: Si4464DY New Product Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.2 0.260 @ VGS = 6.0 V 2.1 D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch


    Original
    PDF Si4464DY S-22099--Rev. 02-Dec-02 720-51 72051

    transistor a 1941

    Abstract: AN609 Si4464DY
    Text: Si4464DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4464DY AN609 19-Mar-07 transistor a 1941

    72051

    Abstract: No abstract text available
    Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg


    Original
    PDF Si4464DY 2002/95/EC Si4464DY-T1-E3 Si4464DY-T1-GE3 11-Mar-11 72051

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original
    PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


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    PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    GRM188R71C104K01D

    Abstract: parallel mosfet SI4464DY-E3 AN1993 GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA 24v active clamp forward converter FDC6333C GRM188R71C223K01D LM3406HV
    Text: National Semiconductor Application Note 1993 Clinton Jensen January 18, 2010 Introduction ness LEDs HBLEDs such as the Luxeon K2 Emitter at forward currents of up to 1.5A. The converter's output voltage adjusts as needed to maintain a constant current through the


    Original
    PDF LM3406HV AN-1993 GRM188R71C104K01D parallel mosfet SI4464DY-E3 AN1993 GENERAL SEMICONDUCTOR DIODE SMA 15A CRCW06031R00FNEA 24v active clamp forward converter FDC6333C GRM188R71C223K01D

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original
    PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx