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Vishay Siliconix SI3475DV-T1-E3 MOSFET P-CH 200V 950MA 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3475DV-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.38041	Buy Now
Vishay Siliconix SI3475DV-T1-GE3 MOSFET P-CH 200V 950MA 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI3475DV-T1-GE3	Digi-Reel			1	1 $0.9 10 $0.9 100 $0.9 1000 $0.9 10000 $0.9	Buy Now
	SI3475DV-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI3475DV-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.91	Get Quote

SI3475DV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3475DV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 950MA 6-TSOP		Original	PDF
SI3475DV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 950MA 6-TSOP		Original	PDF

SI3475DV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si3475DV Abstract: No abstract text available Text: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3475DV 18-Jul-08
Untitled Abstract: No abstract text available Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
74249 Abstract: No abstract text available Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 74249
74249 Abstract: Si3475DV Si3475 Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 11-Mar-11 74249 Si3475
c 2437 power mosfet Abstract: AN609 Si3475DV Text: Si3475DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si3475DV AN609 13-Mar-07 c 2437 power mosfet
74211 Abstract: Si3475DV Text: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si3475DV -100V, S-62042Rev. 16-Oct-06 74211
74249 Abstract: SI3475 Si3475DV Text: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS	Original	PDF	Si3475DV Si3475DV-T1-E3 08-Apr-05 74249 SI3475
74249 Abstract: P-Channel 200V MOSFET TSOP6 Si3475DV Text: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS	Original	PDF	Si3475DV Si3475DV-T1-E3 18-Jul-08 74249 P-Channel 200V MOSFET TSOP6
Untitled Abstract: No abstract text available Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 11-Mar-11
SI3475 Abstract: 74249 Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3475 74249
74249 Abstract: si3475dv Text: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si3475DV 2002/95/EC Si3475DV-T1-E3 Si3475DV-T1-GE3 18-Jul-08 74249
BS250KL-TR1-E3 Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8	Original	PDF	SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
BS250KL Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477