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Vishay Siliconix SI1428EDH-T1-GE3 MOSFET N-CHANNEL 30V 4A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1428EDH-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI1428EDH-T1-GE3 Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70; ESD
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TME	SI1428EDH-T1-GE3				3	1 - 10 $0.253 100 $0.181 1000 $0.163 10000 $0.152	Get Quote
Chip-Germany GmbH	SI1428EDH-T1-GE3		46			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI1428EDH-T1-GE3			21 Weeks	33,000,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI1428EDHT1GE3 N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI1428EDHT1GE3		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI1428EDH Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI1428EDH-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 4A SC70-6		Original	PDF

SI1428EDH Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
30572-1 Abstract: 46160 Text: Si1428EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si1428EDH AN609, 5151u 4018m 1246m 1962u 3115m 9473m 3297m 27-Apr-11 30572-1 46160	PDF
si1428 Abstract: No abstract text available Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1428EDH 2002/95/EC OT-363 SC-70 Si1428EDH-T1-GE3 11-Mar-11 si1428	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si1428EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si1428EDH 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN815 Abstract: No abstract text available Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1428EDH 2002/95/EC OT-363 SC-70 Si1428EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN815	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF