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    SS8550LT1 Search Results

    SS8550LT1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SS8550LT1 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF
    SS8550LT1 Weitron PNP General Purpose Transistors Original PDF
    SS8550LT1-SOT-23 Jiangsu Changjiang Electronics Technology TRANSISTOR PNP Original PDF

    SS8550LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 Marking 1HD

    Abstract: TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1
    Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1


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    PDF SS8550LT1 OT-23 -20Vdc, 10-Apr-09 -80mAdc) OT-23 sot-23 Marking 1HD TOP marking 1HD SOT-23 1HD 1hb marking SS8550LT1

    sot-23 Marking 1HD

    Abstract: No abstract text available
    Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 -40 -5.0 WEITRON http://www.weitron.com.tw 1/2 -0.15 u -0.15 u 27-Jul-2012 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    PDF SS8550LT1 OT-23 27-Jul-2012 -80mAdc) OT-23 sot-23 Marking 1HD

    Untitled

    Abstract: No abstract text available
    Text: SS8550LT1 PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 ) -40 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    PDF SS8550LT1 OT-23 SS8550LT1 -20Vdc, -80mAdc) OT-23

    ss8550

    Abstract: SS8550LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8550LT1 TRANSISTOR( PNP ) 1. BASE 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : -1.5


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    PDF OT-23 OT--23 SS8550LT1 SS8550LT1 037TPY 950TPY 550REF 022REF ss8550

    SS850

    Abstract: amplifier 800mA SS8550LT1 Y2 TRANSISTOR
    Text: SS8550LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8050LT1 * Collector Current :Ic= -800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ PNP EPITAXIAL SILICON TRANSISTOR


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    PDF SS8550LT1 SS8050LT1 -800mA 625mW OT-23 100mA 800mA -800mA -80mA SS850 amplifier 800mA SS8550LT1 Y2 TRANSISTOR

    marking y1 sot-23

    Abstract: SS8550LT1 Y1 SS8050LT1 amplifier 800mA
    Text: SS8050LT1 SEMICONDUCTOR TECHNICAL DATA 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION * Complement to SS8550LT1 * Collector Current :Ic= 800mA * High Total Power Dissipation :Pc=625mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃ NPN EPITAXIAL SILICON TRANSISTOR


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    PDF SS8050LT1 SS8550LT1 800mA 625mW OT-23 100mA 800mA 30MHz marking y1 sot-23 SS8550LT1 Y1 SS8050LT1 amplifier 800mA

    Y2 SOT-23

    Abstract: SS8550LT1 IC800
    Text: SS8550LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 VCEO Value -25 -40 -6.0 -1500 625 5.0 200 SS8550LT1=Y2 -25 -0.1 -40 -100 -6.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    PDF SS8550LT1 OT-23 SS8550LT1 -20Vdc, -80mAdc) -80010V OT-23 Y2 SOT-23 IC800

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current -1.5


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    PDF OT-323 SS8550LT1 OT-323 -100mA -800mA -800mA, -80mA -50mA

    Y2 TRANSISTOR

    Abstract: SS8550LT1
    Text: SS8550LT1 SS8550LT1 TRANSISTOR PNP SOT-323 FEATURES Power dissipation 1. BASE 2. EMITTER 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: -1.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


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    PDF SS8550LT1 OT-323 -55to -100mA -800mA -800mA, -80mA Y2 TRANSISTOR SS8550LT1

    Untitled

    Abstract: No abstract text available
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.3 Collector current ICM: -1.5 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V -40 Operating and storage junction temperature range


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    PDF OT-23 SS8550LT1 -100mA -800mA -80mA -50mA 30MHz SS8550LT1

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


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    PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


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    PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    s 8550 d

    Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
    Text: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V


    OCR Scan
    PDF OT-23 8550LT SS8550LT1 s 8550 d s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550