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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A to9044

    RJH60F6DPK

    Abstract: RJH60F6
    Text: Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 Previous: REJ03G1940-0100 Rev.2.00 Nov 30, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F6DPK R07DS0236EJ0200 REJ03G1940-0100) PRSS0004ZE-A RJH60F6DPK RJH60F6